SQM100 Search Results
SQM100 Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SQM1000A | Essentra Components | Hardware, Fasteners, Accessories - Accessories - 1.50IN 16-18 GAUGE 3/8-16 THREAD | Original | 187.83KB | |||
SQM100N02-3M5L_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 100A TO263 | Original | 157.45KB | |||
SQM100N04-2M7_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO-263 | Original | 209.5KB | |||
SQM100N04-3M5-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO-263 | Original | 9 | |||
SQM100N10-10_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 100A TO-263 | Original | 181.18KB | |||
SQM100P10-19L_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 100V 93A TO263 | Original | 214.84KB |
SQM100 Price and Stock
Vishay Siliconix SQM100P10-19L_GE3MOSFET P-CH 100V 93A TO263 |
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SQM100P10-19L_GE3 | Cut Tape | 2,141 | 1 |
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SQM100P10-19L_GE3 | 1,600 | 1 |
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Vishay Siliconix SQM100N10-10_GE3MOSFET N-CH 100V 100A TO263 |
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SQM100N10-10_GE3 | Cut Tape | 1,689 | 1 |
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SQM100N10-10_GE3 | 800 | 1 |
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Vishay Siliconix SQM100N04-2M7_GE3MOSFET N-CH 40V 100A TO263 |
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SQM100N04-2M7_GE3 | Digi-Reel | 800 | 1 |
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Essentra Components SQM1000A1.50IN 16-18 GAUGE 3/8-16 THREAD |
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SQM1000A | Bulk | 500 |
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SQM1000A |
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SQM1000A |
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SQM1000A |
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Vishay Siliconix SQM100N02-3M5L_GE3MOSFET N-CH 20V 100A TO263 |
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SQM100N02-3M5L_GE3 | Reel |
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SQM100 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SQM100N10-10 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd 100 RDS(on) () at VGS = 10 V 0.0105 |
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SQM100N10-10 AEC-Q101 O-263 SQM100N10-10-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
sqm100n04-3m5-ge3Contextual Info: SQM100N04-3m5 Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 ID (A) • TrenchFET Power MOSFET 100 Configuration |
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SQM100N04-3m5 AEC-Q101 2002/95/EC O-263 O-263 SQM100N04-3m5-GE3 18-Jul-08 sqm100n04-3m5-ge3 | |
SQM100N10-10-GE3
Abstract: SQM100N10-10 SQM100N10
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SQM100N10-10 AEC-Q101 O-263 O-263 SQM100N10-10-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQM100N10-10-GE3 SQM100N10-10 SQM100N10 | |
SQM100N04-2m7Contextual Info: SQM100N04-2m7 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 40 RDS(on) () at VGS = 10 V • 100 % Rg and UIS Tested 0.0027 |
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SQM100N04-2m7 AEC-Q101 O-263 O-263 SQM100N04-2m7-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQM100N04-2m7 | |
Contextual Info: SPICE Device Model SQM100N10-10 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SQM100N10-10 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SQM100N10-10_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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SQM100N10-10 AN609, 3391m 7351m 6174m 4715m 7574m 7157m 15-Jun-11 | |
Contextual Info: SQM100N04-2m7 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 40 RDS(on) () at VGS = 10 V • 100 % Rg and UIS Tested 0.0027 |
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SQM100N04-2m7 AEC-Q101 O-263 SQM100N04-2m7-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: SQM100N10-10 Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd |
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SQM100N10-10 AEC-Q101 2002/95/EC O-263 O-263 SQM100N10-10-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
Contextual Info: SQM100N10-10 Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd |
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SQM100N10-10 AEC-Q101 2002/95/EC O-263 O-263 SQM100N10-10-GE3 11-Mar-11 | |
Contextual Info: SQM100N04-3m5 Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 ID (A) • TrenchFET Power MOSFET 100 Configuration |
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SQM100N04-3m5 AEC-Q101 2002/95/EC O-263 O-263 SQM100N04-3m5-GE3 11-Mar-11 | |
Contextual Info: SQM100N04-2m7_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SQM100N04-2m7 AN609, 8884m 3109m 4318m 7720m 2693m 09-Jan-13 | |
Contextual Info: SQM100N04-3m5 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0030 ID (A) • 100 % Rg and UIS Tested |
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SQM100N04-3m5 AEC-Q101 O-263 SQM100N04-3m5-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
SQM100N10-10-GE3Contextual Info: SQM100N10-10 Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd |
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SQM100N10-10 AEC-Q101 2002/95/EC O-263 O-263 SQM100N10-10-GE3 18-Jul-08 SQM100N10-10-GE3 | |
Contextual Info: SQM100N04-3m5 Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 ID (A) • TrenchFET Power MOSFET 100 Configuration |
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SQM100N04-3m5 AEC-Q101 2002/95/EC O-263 O-263 SQM100N04-3m5-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
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Contextual Info: SPICE Device Model SQM100N04-2m7 www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SQM100N04-2m7 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQM SQM Square Metal Threaded Insert Part No. SQM0150A SQM0200A SQM0300A SQM0350A SQM0400A SQM0450A SQM0500A SQM0550A SQM0600A SQM0650A SQM0700A SQM0750A SQM0800A SQM0850A SQM0900A SQM1000A Material: HDPE with Zinc-Plated Steel-Threaded Insert Color: Black |
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SQM0150A SQM0200A SQM0300A SQM0350A SQM0400A SQM0450A SQM0500A SQM0550A SQM0600A SQM0650A | |
Contextual Info: CEMENT RESISTORS SQM SERIES Feature Material l Small size and low cost. l Super heat dissipation, instant overload capability. l Instant overload capability l Standard tolerance: ±1%, ±5% l Standard Value: E24 series as range below l For high resistance values, metal oxide film rods, |
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SQM30 JIS-C-5201-1 SQM50 SQM20 SQM70 SQM100 | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
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Ups-2726 VMN-PL0469-1311 DPAK/TO-252 | |
sq4435
Abstract: SQP120N10-09
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VMN-PL0469-1505 sq4435 SQP120N10-09 | |
SQ2315ES
Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
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AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ |
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AEC-Q101 VMN-SG2151-1212 | |
SQ3427
Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
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AEC-Q101 VMN-SG2151-1209 docu33-4-9337-2727 SQ3427 sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309 |