SQJ858 Search Results
SQJ858 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SQJ858AEP-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 58A | Original | 194.95KB | |||
| SQJ858AEP-T1_BE3 | Vishay Siliconix | MOSFET N-CH 40V 58A PPAK SO-8 | Original | 193.78KB | |||
| SQJ858AEP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 58A 8-SO | Original | 10 | |||
| SQJ858EP-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 75A POWERPAKSO-8 | Original | 126.58KB |
SQJ858 Price and Stock
Vishay Siliconix SQJ858AEP-T1_GE3MOSFET N-CH 40V 58A PPAK SO-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ858AEP-T1_GE3 | Cut Tape | 5,666 | 1 |
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Vishay Siliconix SQJ858AEP-T1_BE3MOSFET N-CH 40V 58A PPAK SO-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ858AEP-T1_BE3 | Cut Tape | 2,893 | 1 |
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Vishay Siliconix SQJ858EP-T1_GE3MOSFET N-CH 40V 75A PPAK SO-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ858EP-T1_GE3 | Reel | 3,000 |
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Vishay Siliconix SQJ858AEP-T1_JB3N-CHANNEL 40-V (D-S) 175C MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ858AEP-T1_JB3 | Reel | 3,000 |
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Vishay Intertechnologies SQJ858AEP-T1_GE3Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ858AEP-T1_GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ858AEP-T1_GE3 | Reel | 24,000 | 25 Weeks | 3,000 |
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SQJ858AEP-T1_GE3 | 3,515 |
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SQJ858AEP-T1_GE3 | 14,930 | 13 |
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SQJ858AEP-T1_GE3 | Cut Strips | 14,930 | 18 Weeks | 1 |
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SQJ858AEP-T1_GE3 | Reel | 24,000 | 3,000 |
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SQJ858AEP-T1_GE3 | 1,397 | 5 |
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SQJ858AEP-T1_GE3 | 1,117 |
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SQJ858AEP-T1_GE3 | 1 |
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SQJ858AEP-T1_GE3 | Reel | 12,000 | 3,000 |
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SQJ858AEP-T1_GE3 | 15,000 | 27 Weeks | 3,000 |
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Get Quote | |||||
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SQJ858AEP-T1_GE3 | 26 Weeks | 3,000 |
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SQJ858AEP-T1_GE3 | 12,000 | 3,000 |
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SQJ858 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SQJ858AEPContextual Info: SQJ858AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0063 RDS(on) () at VGS = 4.5 V 0.0075 ID (A) • AEC-Q101 Qualifiedd |
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SQJ858AEP AEC-Q101 SQJ858AEP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQJ858AEP | |
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Contextual Info: SQJ858EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 40 RDS(on) () at VGS = 10 V |
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SQJ858EP AEC-Q101 2002/95/EC SQJ858EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SQJ858EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 40 RDS(on) () at VGS = 10 V |
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SQJ858EP AEC-Q101 2002/95/EC SQJ858EP-T1-GE3 11-Mar-11 | |
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Contextual Info: SPICE Device Model SQJ858AEP www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SQJ858AEP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SQJ858AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0063 RDS(on) () at VGS = 4.5 V 0.0075 ID (A) • AEC-Q101 Qualified • 100 % Rg and UIS Tested |
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SQJ858AEP AEC-Q101 SQJ858AEP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SQJ858AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0063 RDS(on) () at VGS = 4.5 V 0.0075 ID (A) • AEC-Q101 Qualifiedd |
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SQJ858AEP AEC-Q101 SQJ858AEP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SQJ858EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 40 RDS(on) () at VGS = 10 V |
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SQJ858EP AEC-Q101 2002/95/EC SQJ858EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SQJ858EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.006 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.009 • AEC-Q101 Qualified |
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SQJ858EP AEC-Q101 SQJ858EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
sqj858
Abstract: SQJ858AEP 69003
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SQJ858AEP AEC-Q101 SQJ858AEP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sqj858 SQJ858AEP 69003 | |
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Contextual Info: SQJ858EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.006 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.009 • AEC-Q101 Qualified |
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SQJ858EP AEC-Q101 SQJ858EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SQJ858AEP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SQJ858AEP AN609, 2339m 0110m 0410m 5217m 5590m 7781m 1527u 17-Aug-11 | |
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Contextual Info: SQJ858EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.006 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.009 • AEC-Q101 Qualified |
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SQJ858EP AEC-Q101 SQJ858EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SQJ858EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.006 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.009 • AEC-Q101 Qualified |
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SQJ858EP AEC-Q101 SQJ858EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: Vishay Intertechnology, Inc. Automotive Powertrain – 12 V / 24 V One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components AUTOMOTIVE Automotive Powertrain – 12 V / 24 V More information on the Engineer’s Toolbox, including product datasheet links, can be found at www.vishay.com/ref/et3. |
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IHLP-5050FD-5A 31/VJ. AEC-Q200 HCTF235 JEDEC-J-STD-020 VMN-MS6980-1411-AUPO1 | |
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Contextual Info: Vishay Intertechnology, Inc. Automotive Body Electronics One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components AUTOMOTIVE Automotive Body Electronics More information on the Engineer’s Toolbox, including product datasheet links, can be found at www.vishay.com/ref/et3. |
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NTCS6030E3. SQS840EN AEC-Q200 AEC-Q101 AEC-Q200-qualified VMN-MS6980-1411-AUBO | |
sq4435
Abstract: SQP120N10-09
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VMN-PL0469-1505 sq4435 SQP120N10-09 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406 | |
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Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ |
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AEC-Q101 VMN-SG2151-1212 | |
SQ3427
Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
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AEC-Q101 VMN-SG2151-1209 docu33-4-9337-2727 SQ3427 sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309 | |