SQD50P08 Search Results
SQD50P08 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SQD50P08-25L_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 80V TO252 | Original | 188.01KB | |||
| SQD50P08-28-T4_GE3 | Vishay Siliconix | MOSFET P-CH 80V 48A TO252AA | Original | 203.72KB | |||
| SQD50P08-28_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 80V 48A TO252AA | Original | 204.61KB |
SQD50P08 Price and Stock
Vishay Intertechnologies SQD50P08-28_GE3Transistor: P-MOSFET; unipolar; -80V; -28A; Idm: -190A; 45W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQD50P08-28_GE3 | 1 |
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SQD50P08-28_GE3 | 2,000 | 11 |
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| SQD50P08-28_GE3 | 2,000 | 2,000 |
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SQD50P08-28_GE3 | Tape w/Leader | 30 Weeks | 2,000 |
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SQD50P08-28_GE3 | 2,000 | 30 Weeks | 1 |
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SQD50P08-28_GE3 | Cut Tape | 1,731 | 1 |
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| SQD50P08-28_GE3 | Tape & Reel | 1,731 | 100 |
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SQD50P08-28_GE3 | 32 Weeks | 2,000 |
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SQD50P08-28_GE3 | 23 Weeks | 2,000 |
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Vishay Intertechnologies SQD50P08-25L_GE3Trans MOSFET P-CH 80V 50A 3-Pin(2+Tab) DPAK Automotive AEC-Q101 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQD50P08-25L_GE3 | 2,000 | 2,000 |
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| SQD50P08-25L_GE3 | 2,000 | 2,000 |
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SQD50P08-25L_GE3 | Tape & Reel | 2,000 | 30 Weeks | 2,000 |
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| SQD50P08-25L_GE3 | Ammo Pack | 1 |
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SQD50P08-25L_GE3 | 2,000 | 30 Weeks | 2,000 |
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| SQD50P08-25L_GE3 | 2,000 | 30 Weeks | 2,000 |
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| SQD50P08-25L_GE3 | Cut Strips | 3 | 30 Weeks | 1 |
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SQD50P08-25L_GE3 | Cut Tape | 5,674 | 1 |
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| SQD50P08-25L_GE3 | Tape & Reel | 5,674 | 100 |
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| SQD50P08-25L_GE3 | Bulk | 1,773 | 1 |
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| SQD50P08-25L_GE3 | Tape & Reel | 2,000 |
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SQD50P08-25L_GE3 | 3,596 |
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| SQD50P08-25L_GE3 | 6 | 1 |
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SQD50P08-25L_GE3 | 4 |
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SQD50P08-25L_GE3 | 32 Weeks | 2,000 |
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SQD50P08-25L_GE3 | 23 Weeks | 2,000 |
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Vishay Intertechnologies SQD50P08-28-T4_GE3P-CHANNEL 80-V (D-S) 175C MOSFET - Tape and Reel (Alt: SQD50P08-28-T4_GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQD50P08-28-T4_GE3 | Tape & Reel | 30 Weeks | 2,500 |
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Vishay Intertechnologies SQD50P08-28_NE3- Tape and Reel (Alt: SQD50P08-28_NE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQD50P08-28_NE3 | Tape & Reel | 2,000 |
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Vishay Intertechnologies SQD50P08-25L-GE3P-Channel 80-V (D-S) 175C Mosfet; |Vishay SQD50P08-25L-GE3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQD50P08-25L-GE3 | Tape & Reel | 2,000 |
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Buy Now | ||||||
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SQD50P08-25L-GE3 | Reel | 2,000 |
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SQD50P08-25L-GE3 | 26 Weeks | 2,000 |
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SQD50P08 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SQD50P08-25L Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • TrenchFET Power MOSFET |
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sqd50p08-25l2002/95/ecaec-q101o-252+2 | |
SQD50P08-28-GE3
Abstract: SQD50P08-28 SQD50P08
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sqd50p08-28aec-q1012002/95/eco-252+3 | |
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Contextual Info: SQD50P08-25L Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • TrenchFET Power MOSFET |
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sqd50p08-25l2002/95/ecaec-q101o-252+2 | |
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Contextual Info: SPICE Device Model SQD50P08-28 www.vishay.com Vishay Siliconix N-Channel 80 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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sqd50p08-282002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SQD50P08-25L Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • TrenchFET Power MOSFET |
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sqd50p08-25l2002/95/ecaec-q101o-252+2 | |
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Contextual Info: SQD50P08-28 Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.028 ID (A) • TrenchFET Power MOSFET - 48 Configuration |
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sqd50p08-28aec-q1012002/95/eco-252+2 | |
SQD50P08Contextual Info: SQD50P08-25L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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sqd50p08-25lan6091002m8039m+6 | |
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Contextual Info: SQD50P08-28 Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.028 ID (A) • TrenchFET Power MOSFET - 48 Configuration |
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sqd50p08-28aec-q1012002/95/eco-252+3 | |
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Contextual Info: SPICE Device Model SQD50P08-25L www.vishay.com Vishay Siliconix P-Channel 80 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sqd50p08-25l2011/65/eu2002/95/ec12-mar-12 | |
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Contextual Info: SQD50P08-25L Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • TrenchFET Power MOSFET |
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sqd50p08-25l2002/95/ecaec-q101o-252+2 | |
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Contextual Info: SQD50P08-25L www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 |
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sqd50p08-25laec-q101o-252sqd50p08-25l-ge3+3 | |
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Contextual Info: SQD50P08-25L www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 |
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sqd50p08-25laec-q101o-252sqd50p08-25l-ge3+3 | |
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Contextual Info: SQD50P08-28 Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.028 ID (A) • TrenchFET Power MOSFET - 48 Configuration |
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sqd50p08-28aec-q101o-2522002/95/ec+3 | |
SQD50P08-28Contextual Info: SQD50P08-28 Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.028 ID (A) • TrenchFET Power MOSFET - 48 Configuration |
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sqd50p08-28aec-q1012002/95/eco-252+2 | |
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piezo injector
Abstract: Automotive ECU IC automotive ecu circuit engine diesel injector MOSFET driver WSLT2512
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iso9141o-277a0v-50vdcsm5a27he3+7 | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
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ups-2726vmn-pl0469-1311dpak/to-252 | |
SQJ469ep
Abstract: SQ4483BE
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aec-q101ts-16949vmn-ms6925-1406sqj469ep+1 | |
sq4435
Abstract: SQP120N10-09
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vmn-pl0469-1505sq4435sqp120n10-09 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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aec-q101vmn-sg2151-1406 | |
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Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ |
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aec-q101vmn-sg2151-1212 | |
SQ3427
Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
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aec-q101vmn-sg2151-1209docu33-4-9337-2727sq3427+9 | |