SQ4401DY Search Results
SQ4401DY Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SQ4401DY-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 15.8A 8SOIC | Original | 10 |
SQ4401DY Price and Stock
Vishay Intertechnologies SQ4401DYT1GE3AUTOMOTIVE P-CHANNEL 40 V (D-S) 150 DEGREE CELSIUS MOSFET Small Signal Field-Effect Transistor, 10.5A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQ4401DYT1GE3 | 11,520 |
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Get Quote | |||||||
SQ4401DY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SQ4401DY-T1-GE3Contextual Info: SQ4401DY Vishay Siliconix Automotive P-Channel 40 V D-S 150 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) (Ω) at VGS = - 10 V 0.014 • TrenchFET Power MOSFET RDS(on) (Ω) at VGS = - 4.5 V |
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sq4401dy2002/95/ecaec-q101sq4401dy-t1-ge3+1 | |
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Contextual Info: SQ4401DY Vishay Siliconix Automotive P-Channel 40 V D-S 150 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free - 40 RDS(on) (Ω) at VGS = 10 V 0.014 ID (A) - 8.7 Configuration • TrenchFET Power MOSFET COMPLIANT Single AEC-Q101 RELIABILITY • Passed all AEC-Q101 Reliability Testing |
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sq4401dyaec-q101sq4401dy-t1-ge318-jul-08 | |
SQ4401DY-T1-GE3Contextual Info: SQ4401DY Vishay Siliconix Automotive P-Channel 40 V D-S 150 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free - 40 RDS(on) (Ω) at VGS = 10 V 0.014 ID (A) - 8.7 Configuration • TrenchFET Power MOSFET COMPLIANT Single AEC-Q101 RELIABILITY • Passed all AEC-Q101 Reliability Testing |
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sq4401dyaec-q101sq4401dy-t1-ge318-jul-08 | |
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Contextual Info: SQ4401DY www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 150 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) () at VGS = - 10 V 0.014 RDS(on) () at VGS = - 4.5 V 0.023 ID (A) |
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sq4401dyaec-q1012002/95/ecsq4401dy-t1-ge3+1 | |
AN609Contextual Info: SQ4401DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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sq4401dyan60905-mar-10 | |
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Contextual Info: SQ4401DY www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 150 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) () at VGS = - 10 V 0.014 RDS(on) () at VGS = - 4.5 V 0.023 ID (A) |
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sq4401dyaec-q1012002/95/ecsq4401dy-t1-ge3+2 | |
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Contextual Info: SQ4401DY Vishay Siliconix Automotive P-Channel 40 V D-S 150 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) (Ω) at VGS = - 10 V 0.014 • TrenchFET Power MOSFET RDS(on) (Ω) at VGS = - 4.5 V |
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sq4401dy2002/95/ecaec-q101sq4401dy-t1-ge3+1 | |
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Contextual Info: SQ4401DY Vishay Siliconix Automotive P-Channel 40 V D-S 150 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) () at VGS = - 10 V 0.014 • TrenchFET Power MOSFET RDS(on) () at VGS = - 4.5 V |
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sq4401dy2002/95/ecaec-q101sq4401dy-t1-ge3+1 | |
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Contextual Info: SPICE Device Model SQ4401DY Vishay Siliconix P-Channel 40 V D-S 150 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sq4401dy18-jul-08 | |
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Contextual Info: SQ4401DY www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 150 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) () at VGS = - 10 V 0.014 RDS(on) () at VGS = - 4.5 V 0.023 ID (A) |
Original |
sq4401dyaec-q1012002/95/ecsq4401dy-t1-ge3+3 |