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MOSFET Abstract: SPP3407B spp3407bs23rgb Contextual Info: SPP3407B P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3407B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	SPP3407B SPP3407B -30V/-4 -30V/-3 MOSFET spp3407bs23rgb	PDF

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MOSFET

Abstract: SPP3407B spp3407bs23rgb
Contextual Info: SPP3407B P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3407B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

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SPP3407B SPP3407B -30V/-4 -30V/-3 MOSFET spp3407bs23rgb

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