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    SPN8882 Search Results

    SPN8882 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SPN8882
    		SYNC Power N-Channel Enhancement Mode MOSFET Original PDF 241.63KB 9
    SPN8882T251T
    		SYNC Power N-Channel Enhancement Mode MOSFET Original PDF 241.62KB 9
    SPN8882T252R
    		SYNC Power N-Channel Enhancement Mode MOSFET Original PDF 241.62KB 9

    SPN8882 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TO-251 Package

    Abstract: SPN8882 SPN8882T251T SPN8882T252R 5V GATE TO SOURCE VOLTAGE MOSFET TO-251 Outline TO-252 N-channel MOSFET
    Contextual Info: SPN8882 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall


    Original     		SPN8882 SPN8882 0V/40A O-25ise TO-251 Package SPN8882T251T SPN8882T252R 5V GATE TO SOURCE VOLTAGE MOSFET TO-251 Outline TO-252 N-channel MOSFET PDF

    SPN8882

    Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET
    Contextual Info: SPN8882 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall


    Original     		SPN8882 SPN8882 0V/40A O-25rwise 5V GATE TO SOURCE VOLTAGE MOSFET PDF

    diode 12/08

    Abstract: SPN8882
    Contextual Info: SPN8882 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall


    Original     		SPN8882 SPN8882 0V/40A O-25rwise diode 12/08 PDF