SPN8 Search Results

TO-251 Package

Abstract: SPN8882 SPN8882T251T SPN8882T252R 5V GATE TO SOURCE VOLTAGE MOSFET TO-251 Outline TO-252 N-channel MOSFET
Contextual Info: SPN8882 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall

Contextual Info: Cross Reference Guide PN8463 / SPN8463* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 0.0 - 400.0 MHz Gain 10.5 dB Typical 9.0 dB Min Noise Figure 6.5 dB Typical 7.5 dB Max P1dB 17.0 dBm Typical 15.0 dBm Min

Contextual Info: PN8210 / SPN8210 Amplifier Performance Datasheet Cross Reference Guide PN8210 / SPN8210* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 0.0 - 600.0 MHz Gain 10.0 dB Typical 9.0 dB Min Noise Figure 6.0 dB Typical

Contextual Info: PN8461 / SPN8461 Amplifier Performance Datasheet Cross Reference Guide PN8461 / SPN8461* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 0.0 - 400.0 MHz Gain 15.0 dB Typical 13.5 dB Min Noise Figure 4.5 dB Typical

Contextual Info: PN8464 / SPN8464 Amplifier Performance Datasheet Cross Reference Guide PN8464 / SPN8464* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 0.0 - 400.0 MHz Gain 10.5 dB Typical 9.0 dB Min Noise Figure 6.5 dB Typical

8439

Abstract: Power logic MOSFET SOT-223
Contextual Info: SPN8439 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8439 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN8878

Abstract: 24V 20A mosfet switch
Contextual Info: SPN8878 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878 has been designed specifically to improve the overall

SPN860003

Contextual Info: SPN860003 Micrel SPN860003 QwikRadio Low-Power 433.92 MHz Receiver Preliminary Information DRAFT Rev 10/99-B General Description Features The SPN860003 QwikRadio™ UHF receiver is a single-chip OOK on-off keyed receiver IC for remote wireless applications. This device is a true single-chip, “antenna-in, data-out”

SPN8882

Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET
Contextual Info: SPN8882 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall

Contextual Info: SPN8878B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878B has been designed specifically to improve the

Contextual Info: Cross Reference Guide PN8111 / SPN8111* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 0.0 - 400.0 MHz Gain 15.8 dB Typical 14.0 dB Min Noise Figure 3.0 dB Typical 4.0 dB Max P1dB -0.2 dBm Typical -2.0 dBm Min

Contextual Info: PN8460 / SPN8460 Amplifier Performance Datasheet Cross Reference Guide PN8460 / SPN8460* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 0.0 - 400.0 MHz Gain 15.0 dB Typical 14.0 dB Min Noise Figure 3.3 dB Typical

Contextual Info: Cross Reference Guide PN8462 / SPN8462* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 0.0 - 400.0 MHz Gain 14.5 dB Typical 13.0 dB Min Noise Figure 5.0 dB Typical 7.0 dB Max P1dB 8.5 dBm Typical 7.0 dBm Min

RL20 rectifier diode

Abstract: marking Td MOSFET 80A diode
Contextual Info: SPN8080 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8080 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

MIC5201-2.8BM

Abstract: SPN860006
Contextual Info: SPN860006 Micrel SPN860006 QwikRadio Low-Power UHF Receiver Advance Information General Description Features The MICRF001 QwikRadio™ UHF receiver is a single-chip OOK on-off keyed receiver IC for remote wireless applications. This device is a true single-chip, “antenna-in, data-out”

Contextual Info: Cross Reference Guide PN8464 / SPN8464* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 0.0 - 400.0 MHz Gain 10.5 dB Typical 9.0 dB Min Noise Figure 6.5 dB Typical 7.5 dB Max P1dB 17.0 dBm Typical 15.0 dBm Min

Contextual Info: PN8120 / SPN8120 Amplifier Performance Datasheet Cross Reference Guide PN8120 / SPN8120* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 0.0 - 400.0 MHz Gain 15.0 dB Typical 13.0 dB Min Noise Figure 5.0 dB Typical

pn8110

Contextual Info: Cross Reference Guide PN8110 / SPN8110* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 0.0 - 400.0 MHz Gain 15.0 dB Typical 13.0 dB Min Noise Figure 4.0 dB Typical 5.5 dB Max P1dB -0.2 dBm Typical -5.0 dBm Min

N-Channel, 30V, 4.0A, Power MOSFET

Contextual Info: SPN8457 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8457 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN8822A

Abstract: SPN8822ATS8RG SPN8822ATS8TG marking 30 dual mosfet marking Td MOSFET
Contextual Info: SPN8822A Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8822A is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially

diode 12/08

Abstract: SPN8882
Contextual Info: SPN8882 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall

SPN860005

Contextual Info: SPN860006 Micrel SPN860005 QwikRadio Low-Power UHF Receiver Preliminary Information DRAFT Rev 6/00-A1 General Description Features The SPN860005 QwikRadio™ UHF receiver is a single-chip OOK on-off keyed receiver IC for remote wireless applications. This device is a true single-chip, “antenna-in, data-out”

Contextual Info: PN8130 / SPN8130 Amplifier Performance Datasheet Cross Reference Guide PN8130 / SPN8130* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 0.0 - 400.0 MHz Gain 14.0 dB Typical 13.0 dB Min Noise Figure 6.0 dB Typical

Contextual Info: PN8330 / SPN8330 Amplifier Performance Datasheet Cross Reference Guide PN8330 / SPN8330* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 0.0 - 1000.0 MHz Gain 6.2 dB Typical 5.0 dB Min Noise Figure 9.5 dB Typical