SPECIFICATIONS OF SCHOTTKY DIODE Search Results

single phase reactive power meter

Abstract: 2824 footprint Schottky Diode Marking C3 SMALL SIGNAL SCHOTTKY DIODE marking code C5 ACT 4060 A schottky diode cross reference HSMS-286* reliability circuit schematic for ev 100 m mixer c5 marking code sot-323
Contextual Info: HSMS-282x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detecting,

CMDSH-4E

Abstract: 4E diode marking code 4e S1E marking
Contextual Info: Central CMDSH-4E TM Semiconductor Corp. ENHANCED SPECIFICATION SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-4E is an Enhanced version of the CMDSH-3 Silicon Schottky Diode in an SOD-323 Surface Mount Package. ENHANCED SPECIFICATIONS: ♦ IO from 100 mA max to 200 mA max.

BAT54CW

Abstract: amperes BAT54AW BAT54SW BAT54W
Contextual Info: BAT54W BAT54AW BAT54CW BAT54SW DC COMPONENTS CO., LTD. RECTIFIER SPECIALISTS R TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY BARRIER DIODES VOLTAGE - 30 Volts CURRENT - 0.2 Amperes FEATURES * * * * For general purpose applications Low turn-on voltage.

SMALL SIGNAL SCHOTTKY DIODES DO-35

Abstract: ultra low drop, high current diode 1N60P DO-35 silicon Rectifier diodes HALF WAVE RECTIFIER CIRCUITS high speed
Contextual Info: DC COMPONENTS CO., LTD. 1N60P RECTIFIER SPECIALISTS R TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY DIODES FEATURES * Metal silicon junction, majority carrier conduction. * High current capability, low forward voltage drop. * * * * * Extremely low reverse current IR

amperes

Abstract: SMALL SIGNAL SCHOTTKY DIODES DO-35 BAT43 BAT42
Contextual Info: DC COMPONENTS CO., LTD. R BAT42 BAT43 RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY BARRIER DIODES VOLTAGE - 30 Volts CURRENT - 0.2 Amperes FEATURES * * * * For general purpose applications Low turn-on voltage. Fast switching time.

SMALL SIGNAL SCHOTTKY DIODES DO-35

Abstract: SD103A SD103B SD103C
Contextual Info: SD103A THRU SD103C DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY BARRIER DIODES VOLTAGE RANGE - 20 to 40 Volts CURRENT - 0.35 Ampere FEATURES * * * * For general purpose applications Low turn-on voltage Fast switching time

SG2 SOT23

Abstract: XH8 mixer marking SH8 SMS7621-074LF
Contextual Info: DATA SHEET Surface Mount Mixer and Detector Schottky Diodes Applications • Sensitive RF and microwave detector circuits • Sampling and mixer circuits • High-volume wireless • WiFi and mobile • Low-noise receivers in high-sensitivity ID tags • Radio designs

DMF2820-220

Abstract: DMJ2092-222 DMF2822 DMF2828 dmj2836 ka-band mixer DME2127-000 DME2333-000 MAX182 DMF2344-000
Contextual Info: DATA SHEET DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs & Quads, Bondable & Packaged Chips Applications x Microwave Integrated Circuits x Mixers x Detectors Features x Low 1/f noise x Low intermodulation distortion x Epoxy and hermetically sealed packages

CDB7619-000

Abstract: CDB7620-000 CDC7630-000 CDC7631-000 CDF7621-000 CDF7623-000
Contextual Info: DATA SHEET CDB, CDC, CDF Series: Silicon Schottky Diode Chips Applications x Detectors x Mixers Features x Low capacitance for use beyond 40 GHz x ZBD and low barrier designs x P-type and n-type junctions x Large bond pad chip design x Packages rated MSL1, 260 qC per JEDEC J-STD-020

6N754

Contextual Info: Final Datasheet FDFS6N754 Integrated N-Channel PowerTrench tm MOSFET and Schottky Diode 30V, 4A, 56mΩ Features General Description „ Max rDS on = 56mΩ at VGS = 0V, ID = 4A The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very

MA40135

Abstract: MA40133 ma40131
Contextual Info: Silicon Beam Lead Schottky Barrier Diodes MA40130 Series V3.00 Features ● ● ● ● Case Style 965 Planar Construction Surface Oriented Diode Strong Beam Construction Low Noise Figure (Mixer Diodes) Low, Medium and High Barrier Diodes Available Description

FDFMA2P029Z

Abstract: a5200
Contextual Info: FDFMA2P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode –20V, –3.1A, 95mΩ Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward

TSM301K12CQ

Abstract: 5S mosfet
Contextual Info: TSM301K12 20V P-Channel MOSFET with Schottky Diode TDFN 2x2 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Anode 6. Cathode 2. NC 5. Gate 3. Drain 4. Source -20 ID (A) 94 @ VGS = -4.5V -2.8 131 @ VGS = -2.5V -2.3 185 @ VGS = -1.8V -0.54 SCHOTTKY PRODUCT SUMMARY

TSM301K12CQ

Contextual Info: TSM301K12 20V P-Channel MOSFET with Schottky Diode TDFN 2x2 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Anode 6. Cathode 2. NC 5. Gate 3. Drain 4. Source -20 ID (A) 94 @ VGS = -4.5V -2.8 131 @ VGS = -2.5V -2.3 185 @ VGS = -1.8V -0.54 SCHOTTKY PRODUCT SUMMARY

FDFMA2P853

Abstract: 1A86
Contextual Info: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET

FDFMA2P853

Contextual Info: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET

CD0603B00340

Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ ■ Applications Lead free as standard RoHS compliant* Leadless Low stored charge ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD0603/1005 Schottky Barrier Chip Diode Series

CD0603B00340

Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ ■ Applications Lead free as standard RoHS compliant* Leadless Low stored charge ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD0603/1005 Schottky Barrier Chip Diode Series

Contextual Info: FDFMA3N109 tm Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: This device is designed specifically as a single package solution for a boost topology in cellular handset and • 2.9 A, 30 V RDS ON = 123 mΩ @ VGS = 4.5 V

2P110

Abstract: P-channel power mosfet 30V FDFM2P110 IR P-Channel mosfet
Contextual Info: FDFM2P110 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Applications FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a

vishay MOSFET code marking

Abstract: Si5853DC Si5853DC-T1-GE3
Contextual Info: Si5853DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 - 20 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21

k and ka band radar detector

Abstract: MS8000 MS8004 MS8001-P10 noise diode Microwave schottky Diode mixer RF Microwave schottky Diode mixer MS8001 m38 schottky MS8002
Contextual Info: GaAs Schottky Diodes TM MS8001 – MS8004 Packaged and Bondable Chips Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors

SMS7630

Abstract: SMS7630-040LF
Contextual Info: DATA SHEET SMS7630-040LF: 0402 Surface Mount Zero Bias Detector Schottky Diode Applications • Sensitive detector circuits • Sampling circuits • Mixer circuits Features • Zero bias detector height • Industry-standard 0402 footprint • Packages rated MSL1, 260 °C per JEDEC J-STD-020

CDC7630-000

Abstract: CDC7631-000 DDC2353-000 DDC2353-250 DDC2354-000 DDC2354-250
Contextual Info: DATA SHEET DDC, CDC, SMS Series: Zero Bias Silicon Schottky Barrier Detector Diodes Applications x Microwave Integrated Circuits x Detectors Features x High sensitivity x Low video impedance x Packages rated MSL1, 260 qC per JEDEC J-STD-020 Skyworks offers lead Pb)-free, RoHS (Restriction of