spansion marking
Abstract: spansion part marking
Contextual Info: Laser Marking Application Note Publication Number Laser_Marking Revision 01 Issue Date June 19, 2009 Laser Marking Application Note 1. Introduction Customers have been adding a mark to designate programming codes after the parts had been programmed for their specific applications. This process has been a big concern for both Spansion and its customers
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spansion markingspansion part marking |
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spansion top marking
Abstract: spansion marking date code Spansion wafer marking RG04 fd1h spansion marking marking 0E marking 1F spansion date code marking S29CD032G
Contextual Info: S29CD-G Electronic Marking Supplement This document includes details of the electronic marking information that will be stored and locked in the S29CD016G and S29CD032G one-time-programmable Secured Silicon Sector. The Secured Silicon Sector will no longer be available as a
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s29cd-gs29cd016gs29cd032gspansion top marking+8spansion marking date codespansion wafer markingrg04fd1hspansion markingmarking 0emarking 1fspansion date code marking
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spansion marking date code
Abstract: J239 OUTPUT SORT CIRCUIT PROTECTION spansion date code marking transistor marking 1f C80H S29CD016J S29CL-J spansion marking
Contextual Info: S29CD-J/S29CL-J Electronic Marking S29CD016J/S29CL016J Only Supplement This document includes details of the electronic marking information that is stored and locked in the one-time-programmable OTP region of S29CD-J/S29CL-J devices. Note: Currently this document only applies to the S29CD016J/S29CL016J. Other S29CD-J/S29CL-J devices may be added in
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s29cd-j/s29cl-js29cd016j/s29cl016js29cd016jspansion marking date code+7j239output sort circuit protectionspansion date code markingtransistor marking 1fc80hs29cl-jspansion marking
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J239
Abstract: spansion marking date code S29CL-J spansion date code marking jv3 Marking Fab25 JV3 diode marking P53 Marking information diode Marking code jv3 f
Contextual Info: S29CD-J/S29CL-J Electronic Marking S29CD016J/S29CL016J Only Supplement This document includes details of the electronic marking information that is stored and locked in the one-time-programmable OTP region of S29CD-J/S29CL-J devices. Note: Currently this document only applies to the S29CD016J/S29CL016J. Other S29CD-J/S29CL-J devices may be added in
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s29cd-j/s29cl-js29cd016j/s29cl016js29cd016jj239+9spansion marking date codes29cl-jspansion date code markingjv3 markingfab25jv3 diodemarking p53marking informationdiode marking code jv3 f
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spansion marking date code
Abstract: Spansion S99 S99-50241 Spansion S99-50241 spansion date code marking S29GL512P10 Spansion S99-50283 s99-5024 Spansion S29GL512P Spansion S29GL-P
Contextual Info: S99-50241 512 Megabit, 3.0 Volt-Only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology Supplement General Description This supplementary document contains information for S99-50241 based upon the S29GL512P. Specifications contained in this supplement supersede those in the S29GL-P data sheet. Please refer to the
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s99-50241s29gl512ps29gl-ps29gl512p10tair20+9spansion marking date codespansion s99spansion s99-50241spansion date code markings29gl512p10spansion s99-50283s99-5024spansion s29gl512pspansion s29gl-p
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spansion marking date code
Contextual Info: S71XS-S based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet Advance Information S71XS-S based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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s71xs-sspansion marking date code |
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DRAM11
Abstract: ALN186 186-ball OB18-6
Contextual Info: S72NS-S Based MCPs MirrorBit Eclipse Flash Memory and DRAM 2 Gb 128M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/ Write, Burst Mode Flash Memory 512 Mb (32M x 16 bit) DDR DRAM on Split Bus S72NS-S Based MCPs Cover Sheet Data Sheet (Advance Information)
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s72ns-sdram11aln186186-ball+1ob18-6
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S72XS256RE0
Abstract: S72XS128RD0 S29VS s72xs128rd0ahbhd RSC133 SDM256D166D3R S29XS
Contextual Info: S72XS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-Only, Address-High, Address-Low, Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16M x 16 bit) DDR DRAM on Split Bus S72XS-R Based MCPs Cover Sheet
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s72xs-r8/16ms72xs256re0s72xs128rd0+5s29vss72xs128rd0ahbhdrsc133sdm256d166d3rs29xs
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Contextual Info: S72VS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-only, Address-Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16M x 16 bit) DDR DRAM on Split Bus S72VS-R Based MCPs Cover Sheet Data Sheet (Advance Information)
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S71WS256PC0HH3YR
Abstract: SWM064D133S1R S71WS256Pc0 S71WS256PC0HH S71WS256PC0HH3 SWM032D S71WS256PC S71WS512PD0HH3Y S71WS256PD
Contextual Info: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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s71ws-ps71ws256pc0hh3yrswm064d133s1rs71ws256pc0+6s71ws256pc0hhs71ws256pc0hh3swm032ds71ws256pcs71ws512pd0hh3ys71ws256pd
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S72XS128RD0AHBHE
Abstract: S72XS256RD0AHBJE
Contextual Info: S72XS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-only, Address-High, AddressLow, Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128 Mb (8M x 16 bit) DDR DRAM on Split Bus S72XS-R Based MCPs Cover Sheet
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s72xs-r8/16ms72xs128rd0ahbhes72xs256rd0ahbje |
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Contextual Info: S72VS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-Only, Address-Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16M x 16 bit) DDR DRAM on Split Bus S72VS-R Based MCPs Cover Sheet Data Sheet (Advance Information)
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S72VS256RE0
Abstract: S72VS128RD0 S29VS S72VS-R SD-M128 SD-M256
Contextual Info: S72VS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-Only, Address-Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16M x 16 bit) DDR DRAM on Split Bus S72VS-R Based MCPs Cover Sheet Data Sheet (Advance Information)
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s72vs-r8/16ms72vs256re0s72vs128rd0+3s29vssd-m128sd-m256
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S70FL01GS
Abstract: FL512S FL01GS S25FL512 S70FL01 S70FL S25FL512S S25FL-K spansion date code marking pid circuit
Contextual Info: S70FL01GS 1 Gbit 128 Mbyte MirrorBit Flash Non-Volatile Memory CMOS 3.0 Volt Core Serial Peripheral Interface with Multi-I/O Data Sheet (Preliminary) S70FL01GS Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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s70fl01gsfl512sfl01gss25fl512+6s70fl01s70fls25fl512ss25fl-kspansion date code markingpid circuit
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Contextual Info: S72NS-S Based MCPs MirrorBit Eclipse Flash Memory and DRAM 2 Gb 128M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/ Write, Burst Mode Flash Memory 512 Mb (32M x 16 bit) DDR DRAM on Split Bus S72NS-S Based MCPs Cover Sheet Data Sheet (Advance Information)
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s72ns-s |
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S72XS128RD0AHBHE
Abstract: s72xs128 spansion top marking S29VS S72XS S29XS ADQ14 spansion marking date code
Contextual Info: S72XS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-only, Address-High, AddressLow, Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128 Mb (8M x 16 bit) DDR DRAM on Split Bus S72XS-R Based MCPs Cover Sheet
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s72xs-r8/16ms72xs128rd0ahbhes72xs128+6spansion top markings29vss72xss29xsadq14spansion marking date code
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S70FL01
Abstract: S70FL01GS
Contextual Info: S70FL01GS 1 Gbit 128 Mbyte MirrorBit Flash Non-Volatile Memory CMOS 3.0 Volt Core Serial Peripheral Interface with Multi-I/O Data Sheet (Preliminary) S70FL01GS Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29WS128N
Abstract: S29WS256N S71WS128NB0 S71WS128NC0 S71WS256NC0 S71WS256ND0 S71WS512N S71WS-N marking YJ AM
Contextual Info: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM S71WS-N Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion
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s71ws-ns29ws128ns29ws256ns71ws128nb0+5s71ws128nc0s71ws256nc0s71ws256nd0s71ws512nmarking yj am
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Contextual Info: S72WS-R based MCP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode MirrorBit NOR Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-R based MCP Products Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion
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S72XS128RD0AHBHE
Abstract: S72XS256RE0AHBH1 lpddr3 circuit diagram of ddr ram s72xs128 Spansion ddr S29VS SD-M128 RSC133 BALL
Contextual Info: S72XS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-Only, Address-High, Address-Low, Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16M x 16 bit) DDR DRAM on Split Bus S72XS-R Based MCPs Cover Sheet
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s72xs-r8/16ms72xs128rd0ahbhes72xs256re0ahbh1+8lpddr3circuit diagram of ddr rams72xs128spansion ddrs29vssd-m128rsc133ball
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S72XS256RE0AHBH1
Abstract: S29XS
Contextual Info: S72XS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-Only, Address-High, Address-Low, Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16M x 16 bit) DDR DRAM on Split Bus S72XS-R Based MCPs Cover Sheet
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s72xs-r8/16ms72xs256re0ahbh1s29xs |
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S72XS128RD0AHBHE
Abstract: spansion marking date code
Contextual Info: S72XS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-only, Address-High, Address-Low, Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16M x 16 bit) DDR DRAM on Split Bus S72XS-R Based MCPs Cover Sheet
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s72xs-r8/16ms72xs128rd0ahbhespansion marking date code |
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Spansion ddr
Abstract: S72NS512RE0AHGG0
Contextual Info: S72NS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-R Based MCPs Cover Sheet Data Sheet (Advance Information)
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s72ns-rspansion ddrs72ns512re0ahgg0 |
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S72VS128RD0
Abstract: MB-108 lpddr3 S72VS256RE0AHBH1 S72VS-R S29VS SDM256D166D1R spansion marking date code S72VS128RD0AHBHE
Contextual Info: S72VS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-Only, Address-Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16M x 16 bit) DDR DRAM on Split Bus S72VS-R Based MCPs Cover Sheet Data Sheet (Advance Information)
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s72vs-r8/16ms72vs128rd0mb-108+6lpddr3s72vs256re0ahbh1s29vssdm256d166d1rspansion marking date codes72vs128rd0ahbhe
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