SOURCE 5A SIMPLE Search Results

Contextual Info: R8005ANJ Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source

TO220FM-3

Contextual Info: ZDX050N50 Datasheet Nch 500V 5A Power MOSFET lOutline VDSS 500V RDS on (Max.) 1.5W ID 5A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: ZDX050N50 Nch 500V 5A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 1.5W ID 5A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

PBT GF-20

Abstract: Ul-498 E252394 LR-229352 E223801 5-20R 67200 99154 DP 804 C
Contextual Info: Datasheet AC Outlet DIN-Rail Mountable Receptacles DIN-rail receptacles, 5A, 15A and 20A power outlets, provide a convenient power source for portable computers or test devices for in-the-panel troubleshooting. They mount on standard 35mm DIN-rail. The terminations accept slotted or Phillips

Contextual Info: UCC1776 UCC2776 UCC3776 UNITRODE Quad FET Driver PRELIMINARY FEATURES DESCRIPTION • High Peak Output Current Each Output - 1 .5A Source, 2.0A Sink The UCC3776 is a four output BCDMOS buffer/driver designed to drive highly capacitive loads such as power MOSFET gates at high speeds. The

Contextual Info: WTC2306A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement

2306a

Abstract: D26A sot-23 Marking DL WTC2306A
Contextual Info: WTC2306A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement

irf830

Abstract: TO-220 Single power supply IRF830 APPLICATION irf830 datasheet power MOSFET IRF830 IRF830 equivalent
Contextual Info: IRF830 Features • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 500V Simple Drive Requirement ID = 5A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

AP9912J

Contextual Info: AP9912H/J Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 20V RDS ON 85mΩ ID G 10A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

Contextual Info: SSM9936M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 D2 Lower gate charge D1 D1 Fast switching characteristics S1 30V R DS ON 50mΩ 5A ID G2 S2 SO-8 BV DSS G1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the

SSM4953M

Contextual Info: SSM4953M P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 D2 Low on-resistance D1 D1 Fast switching BVDSS -30V RDS ON 53mΩ -5A ID G2 S2 SO-8 S1 G1 Description D2 D1 MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching,

Contextual Info: SSM9936GM Dual N-channel Enhancement-mode Power MOSFETs BVD2 Simple drive requirement D2 Lower gate charge D1 D1 Fast switching characteristics R I G2 S2 Pb-free; RoHS compliant. SO-8 S1 BVDSS 30V R DS ON 50mΩ ID 5A G1 DESCRIPTION Advanced Power MOSFETs from Silicon Standard provide the

AF9901M

Abstract: NMOS-2 LCD Monitor Inverter 2N AND 2P-CHANNEL ENHANCEMENT P2d MARKING CODE NMOS-1 N and P MOSFET
Contextual Info: AF9901M 2N and 2P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product The advanced power MOSFET provides the designer

AF9478P

Abstract: anachip mosfet
Contextual Info: AF9478P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description -Lower On-Resistance -Simple Drive Requirement -Fast Switching Characteristic -RoHS Compliant -Pb Free Plating Product The TO-252 package is universally preferred for all commercial-industrial surface mount applications and

SSM4532M

Contextual Info: SSM4532M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS N-ch Simple drive requirement BV D2 Low on-resistance G2 S2 SO-8 50mΩ R DS ON D2 D1 D1 Fast switching +30V DSS S1 P-ch G1 Description ID +5A BV DSS -30V RDS(ON) 70mΩ ID MOSFETs from Silicon Standard Corp. provide the

Contextual Info: AP4532GM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D2 D2 Low On-resistance 30V RDS ON D1 D1 50m ID Fast Switching Characteristic RoHS Compliant & Halogen-Free

Contextual Info: R8010ANX Nch 800V 10A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 0.56W ID 10A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

AP4953M

Contextual Info: AP4953M Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 ▼ Low On-resistance ▼ Fast Switching D2 D1 D1 BVDSS -30V RDS ON 53mΩ ID -5A G2 S2 SO-8 S1 G1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the

AP4532GM

Contextual Info: AP4532GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 D2 ▼ Low On-resistance 30V RDS ON D1 D1 ▼ Fast Switching Characteristic 50mΩ ID S2 G1 SO-8 G2 5A

ap4532

Abstract: ap45
Contextual Info: AP4532GM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 D2 ▼ Low On-resistance 30V RDS ON D1 D1 ▼ Fast Switching Characteristic 50mΩ ID ▼ RoHS Compliant & Halogen-Free

AP9930M

Contextual Info: AP9930M Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G N1S/N2S LCD Monitor Inverter N1D/P1D 6.3A

d237m

Abstract: ap4936m
Contextual Info: AP4936M Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D2 ▼ Simple Drive Requirement D1 D1 ▼ Fast Switching BVDSS 25V RDS ON 37mΩ ID 5.8A G2 S2 SO-8 G1 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the

Contextual Info: AP4523GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 ▼ Low On-resistance D1 40V RDS ON D2 D1 30mΩ ID ▼ Fast Switching Performance G2 S2 ▼ RoHS Compliant