SOT89 MARK CODE AE Search Results

SOT89 MARKING CODE 3D

Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Contextual Info: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK

BH P58

Abstract: sot89 mark code AE ah p96 n58 sot89 sot89 mark code AA
Contextual Info: SOT89 IMPIM MEDIUM POWER TRANSISTORS Pinout: 1-Base, 2&4-Collector, 3-E m itter Type v CEIsat Max ti -E v CBO V VCEO V lc cont) mA mW FCX458 400 400 300 1500 BST 39 400 350 500 1500 P.Ot M in/M ax h Typ MHz Part Mark Code at Iq / V ce mA / Volts Volts at l c / Ib

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

nec 2501

Abstract: nec RF package SOT89 NE5500134 nec marking power amplifier NEC MARKING CODE code marking NEC date code marking NEC FET SOT-89 N-Channel HS350 sot89 fet
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500134 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate

NE5500434

Abstract: nec RF package SOT89 nec 2501
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500434 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate lateral MOS

NE5500234

Abstract: nec RF package SOT89 nec 2501 marking v2 FRS transceiver NE5500234-T1-AZ
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500234 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS DESCRIPTION The NE5500234 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for DCS1800 and PCS1900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RENESAS marking code package sot 89

Abstract: HS350 POWER MINIMOLD marking code renesas
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NE5500234

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NE5500434

Abstract: HS350 NE5500434-AZ
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NE5500234

Abstract: fet sot-89 product marking DCS1800 HS350 PCS1900 RENESAS marking code package sot 89 NE5500234-T1-AZ
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

ALLEGRO MICROSYSTEMS

Abstract: MO-137 MO-187
Contextual Info: Package Drawing Designator: LF Type: 24-pin QSOP 8º 0º 8.66 ±0.10 24 0.25 0.15 3.91 ±0.10 5.99 ±0.20 A NNNNNNNNNNNNN TLF-AAA 1.27 0.41 1 LLLLLLLLLLL 1.04 REF 2 0.25 BSC Branded Face B 24X 1.75 MAX 0.20 C 0.30 0.20 0.635 BSC SEATING PLANE C SEATING PLANE

REJ03G0292-0100

Abstract: BCR08AS-12A BCR08AS-12 BCR08AS-12A-T13
Contextual Info: BCR08AS-12 Triac Low Power Use REJ03G0292-0100 Rev.1.00 Aug.20.2004 Features • • • • • Non-Insulated Type • Planar Passivation Type IT RMS : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGTⅢ : 5 mA IFGTⅢ : 10 mA Outline SOT-89 2, 4 4 1 2 3 3 1. 2. 3.

Contextual Info: CR05AS-8 Thyristor Low Power Use REJ03G0348-0100 Rev.1.00 Aug.20.2004 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline SOT-89 2, 4 4 1 2 3 3 1. 2. 3. 4. Cathode Anode Gate Anode 1 Applications

thyristor sot-89

Abstract: CR05AS-8
Contextual Info: CR05AS-8 Thyristor Low Power Use REJ03G0348-0200 Rev.2.00 Mar.01.2005 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline PLZZ0004CB-A (Package name: SOT-89) 2, 4 4 1 2 3 3 1. 2. 3. 4.

2sk4145

Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
Contextual Info: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)

2sk4145

Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
Contextual Info: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current

heds 5310 encoder

Abstract: heds 5310 Quadrature Encoder 333 cpr COLOR tv tube charger circuit diagrams heds 5300 encoder encoder heds 6310 schematic diagram igbt inverter welding machine HP HEDS 5300 AFBR-5715 ACPL-C87
Contextual Info: Product Catalog 2014 Selection Guide Your Imagination, Our Innovation Sense • Illuminate • Connect What’s Inside 4 Fiber Optic Solutions for Networking 14 Optical Components for Broadband Networking and Communication Applications 8 1 Industrial Fiber Optic Components,

CR08AS-12-T13

Contextual Info: CR08AS-12 Thyristor Low Power Use REJ03G0349-0100 Rev.1.00 Aug.20.2004 Features • IT AV : 0.8 A • VDRM : 600 V • IGT : 100 µA • Non-Insulated Type • Glass Passivation Type Outline SOT-89 2, 4 4 1 2 3 3 1. 2. 3. 4. Cathode Anode Gate Anode 1 Applications

CR08AS-12

Abstract: CR08AS-12-T13
Contextual Info: CR08AS-12 Thyristor Low Power Use REJ03G0349-0200 Rev.2.00 Mar.01.2005 Features • IT AV : 0.8 A • VDRM : 600 V • IGT : 100 µA • Non-Insulated Type • Glass Passivation Type Outline PLZZ0004CB-A (Package name: SOT-89) 2, 4 4 1. 2. 3. 4. 1 2 3 3

HV9961

Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
Contextual Info: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

REJ03G0292-0200

Abstract: BCR08AS-12 BCR08AS-12A-T14 PLZZ0004CA-A hybrid ic sc ka BCR08AS
Contextual Info: BCR08AS-12 Triac Low Power Use REJ03G0292-0200 Rev.2.00 Mar 22, 2007 Features • • • • • Non-Insulated Type • Planar Passivation Type • Completed Pb Free IT RMS : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGT : 5 mA IFGT : 10 mA Outline RENESAS Package code: PLZZ0004CA-A