SOT89 17 Search Results

TK10485M

Abstract: TK16203U TK14521 TK16202U MFP-12 tk14521m TK10489M TK10485 TK10492 MFP36
Contextual Info: 27 INTEGRATED CIRCUITS TOKO U. Kl M ï f i ICs for Communications Equipment üimfflic Surface Mounting Taping 9 .5 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • • FM IF system IC for use In cordless phones, amateur radios up to

Aeroflex Microelectronic Solutions

Abstract: rf sot89 50 MMA500
Contextual Info: MMA500 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.

mma500

Abstract: 05OUR
Contextual Info: MMA500 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.

BCV48

Abstract: BCV49 FMMT38A CM800
Contextual Info: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BCV49 ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV48 PARTMARKING DETAILS – EG C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage

PNP TRANSISTOR SOT89

Abstract: BST15 BST40 FMMTA92 DSA003681 fmmt-a
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BST15 ✪ ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage C COMPLEMENTARY TYPE – BST40 PARTMARKING DETAIL – BT1 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

ZXTN19020DZ

Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
Contextual Info: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor

MMA704

Abstract: rf sot89
Contextual Info: MMA704 DC to 3.7 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA704 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 3.7 GHz Broadband Gain Block

TS16949

Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
Contextual Info: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor

ZXTN2007Z

Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
Contextual Info: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

TS16949

Abstract: ZXTN25012EZ ZXTP25012EZ ZXTP25012EZTA
Contextual Info: ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC cont = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Complementary part number ZXTN25012EZ Description C Packaged in the SOT89 outline this new low saturation 12V PNP

ZX5T849Z

Abstract: ZX5T849ZTA MARKING 7A SOT89
Contextual Info: ZX5T849Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in

53Z Zetex

Abstract: 1a SOT89 IC35
Contextual Info: ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

transistor marking 6A

Abstract: ZXTN2010Z ZXTN2010ZTA
Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various

ZXTN2007Z

Abstract: ZXTN2007ZTA sot89 bv
Contextual Info: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

SOT89 52 10A

Abstract: design ideas FCX1051A FCX1051ATA FCX1151A TS16949
Contextual Info: FCX1051A SOT89 NPN medium power transistor Summary BVCEO > 40V IC cont = 3A VCE(sat) < 120mV @ 1A RCE(sat) = 57m⍀ PD = 2W Complimentary type - FCX1151A Description C An NPN low voltage, high gain bipolar transistor offering very low saturation voltage and excellent current handling in the SOT89

ZXTN25012EZ

Abstract: TS16949 ZXTN25012EZTA ZXTP25012EZ
Contextual Info: ZXTN25012EZ 12V NPN high gain transistor in SOT89 Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6.5A VCE(sat) < 38mV @ 1A RCE(sat) = 25m⍀ PD = 2.4W Complementary part number ZXTP25012EZ Description C Packaged in the SOT89 outline this new ultra high gain, low saturation

PNP 200V 2A SOT89

Abstract: TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A
Contextual Info: ZXTP03200BZ 200V PNP Low VCE sat transistor in SOT89 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 130mΩ PD = 2.4W Description Packaged in the SOT89 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state

ZXTN2010ZTA

Abstract: ZXTN2010Z 0019E
Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various

53Z Zetex

Abstract: "PNP Transistor"
Contextual Info: ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits,

PBSS302NX

Abstract: PBSS301NX PBSS303NX PBSS4250X PBSS4320X PBSS4330X PBSS4350X PBSS4520X PBSS4540X mse267
Contextual Info: Ultra low VCEsat BISS transistors in SOT89 (SC-62) 5.3 A continuous collector current in small medium power package Looking to reduce power consumption and create smaller end products? Then look no further than NXP ultra low VCEsat (BISS) transistors in SOT89 (SC-62). Housed in a medium-power package, these

ZX5T949Z

Abstract: ZX5T949ZTA SOT89 transistor marking 5A
Contextual Info: ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

Contextual Info: Package Information SOT89 Outline Dimensions 3-pin SOT89 Outline Dimensions I A J B C E D G F Symbol H Dimensions in inch Min. Nom. Max. A 0.173 ¾ 0.181 B 0.059 ¾ 0.072 C 0.090 ¾ 0.102 D 0.035 ¾ 0.047 E 0.155 ¾ 0.167 F 0.014 ¾ 0.019 G 0.017 ¾ 0.022

SOT89 transistor marking 4A

Abstract: SOT89 transistor marking 4A high frequency ZXTN19055DZTA ZXTN19055DZ s75 transistor
Contextual Info: ZXTN19055DZ 55V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 55V IC cont = 6A VCE(sat) < 60mV @ 1A RCE(sat) = 28m⍀ PD = 2.1W Description C Packaged in the SOT89 outline this low saturation 55V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC

FCX1051A

Abstract: FCX1151A DSA003683
Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX1051A ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 17mv Typ. Extremely Low Equivalent On-resistance;