SOT89 122 Search Results

Contextual Info: ECG050 The Communications Edge TM InGaP HBT Gain Block Product Features • DC – 4 GHz • +19 dBm P1dB at 1 GHz • +34 dBm OIP3 at 1 GHz • 19 dB Gain at 1 GHz • 5.5 dB Noise Figure at 2 GHz • Available in SOT-86, SOT89 and lead-free / green SOT89 Package Styles

SOT89 MARKING CODE 944

Contextual Info: ECG050 The Communications Edge TM InGaP HBT Gain Block Product Features • DC – 4 GHz • +19 dBm P1dB at 1 GHz • +34 dBm OIP3 at 1 GHz • 19 dB Gain at 1 GHz • 5.5 dB Noise Figure at 2 GHz • Available in SOT-86, SOT89 and lead-free / green SOT89 Package Styles

Contextual Info: RF3377 RF3377General Purpose Amplifier GENERAL PURPOSE AMPLIFIER GND RoHS Compliant & Pb-Free Product Package Style: SOT89 Features Internally Matched Input and Output ̈ 15.5dB Small Signal Gain ̈ +25.5dBm Output IP3 ̈ +13dBm Output P1dB 4 Applications

RF3377

Abstract: RF337XPCBA-410
Contextual Info: RF3377 RF3377General Purpose Amplifier GENERAL PURPOSE AMPLIFIER GND RoHS Compliant & Pb-Free Product Package Style: SOT89 Features 4 Internally Matched Input and Output 15.5dB Small Signal Gain „ +25.5dBm Output IP3 „ +13dBm Output P1dB Applications „

BFG591 amplifier

Abstract: BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide bf763 S0T343
Contextual Info: Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE fT / l c CURVE (see Fig.1 ) LEADED SOT54 SURFACE-MOUNT SOT23 SOT89 SOT143 SOT223 SOT323 (1) BFT25 (2) BF747 BF547 BF547W BFS17

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

FPD1500SOT89

Abstract: FPD2250SOT89 FPD2250SOT89CE MIL-HDBK-263 FPD2250SOT FPD2250
Contextual Info: FPD2250SOT89CE FPD2250SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency

Contextual Info: ATF-50189 Enhancement Mode[1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface mount SOT89[3] package. The combination of low

FPD1050SOT89

Abstract: FPD1050SOT89E 941 LG
Contextual Info: FPD1050SOT89 FPD1050SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features at 2.0GHz The FPD1050SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25 mx1050μm Schottky

Contextual Info: ATF-50189 Enhancement Mode[1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface mount SOT89[3] package. The combination of low

ATF-50189

Contextual Info: ATF-50189 Enhancement Mode[1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface mount SOT89[3] package. The combination of low

Contextual Info: ATF-50189 Enhancement Mode[1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface mount SOT89[3] package. The combination of low

matching circuit of atf 52189

Abstract: ATF-52189 ATF-52189-BLK ATF-52189-TR1 marking 2g dbm sot-89 52189
Contextual Info: ATF-52189 High Linearity Mode [1] Enhancement Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Avago Technologies’s ATF-52189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is

transistor MARKING CODE LAYOUT G SOT89

Abstract: "package marking" 564 ATF-52189-BLK marking 903 sot-89 SOT89 marking GA LNA in WLAN 702 sot c 2665 depletion mode fet e-phemt
Contextual Info: ATF-52189 High Linearity Mode [1] Enhancement Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Avago Technologies’s ATF-52189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is

Contextual Info: ATF-52189 High Linearity Mode [1] Enhancement Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Avago Technologies’s ATF-52189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is

FPD1500SOT89

Abstract: FPD2250SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures
Contextual Info: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency

BGA6289

Abstract: BGA2031
Contextual Info: BGA6289 MMIC wideband medium power amplifier Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description The BGA6289 is a silicon Monolithic Microwave Integrated Circuit MMIC wideband medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic low thermal

pseudomorphic HEMT

Abstract: FPD1500SOT89 FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250
Contextual Info: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT RoHS Compliant and Pb-Free Package: SOT89 Product Description Features The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

C3-1.2AGHZ

Abstract: ATF-53189
Contextual Info: ATF-53189 ­ Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 ­Package Data Sheet Description Features Avago Technologies’s ATF‑53189 is a single-voltage high linearity, low noise E‑pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a

2630 opt

Abstract: 53189 SF 829 B ATF-53189
Contextual Info: ATF-53189 ­ Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 ­Package Data Sheet Description Features Avago Technologies’s ATF‑53189 is a single-voltage high linearity, low noise E‑pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a

34523

Abstract: ATF-53189
Contextual Info: ATF-53189 ­ Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 ­Package Data Sheet Description Features Avago Technologies’s ATF‑53189 is a single-voltage high linearity, low noise E‑pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a

40530 transistor

Abstract: MMA701-SOT89TR 7905 sot89 MMA 7815 MMA701 MMA701-SOT89 AN 7591 POWER AMPLIFIER PH 0852 7814 transistor AN 7591
Contextual Info: MMA701-SOT89 High Linearity Packaged HBT FEATURES • • • • G +45 dBm IP3 at 2.1 GHz +25 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 4000 MHz Operation MMA 701 The MMA701 is an InGaP Heterojunction Bipolar Transistor (HBT)

Contextual Info: ATF-52189 High Linearity Mode[1] Enhancement Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-52189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a

Contextual Info: 0035104 TT 4 W A P X N A*ER PlJILIPS/DISCRETE PNP 5 GHz wideband transistor b?E D ^53131 Philips Semiconductors DESCRIPTION Product specification e BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers