SOT669 PACKAGE Search Results

sot669

Abstract: PH3230
Contextual Info: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 7 February 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK)

PH3230

Abstract: SOT669-LFPAK sot669 package
Contextual Info: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 03 — 25 June 2003 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).

LFPAK footprint

Abstract: PH2920 sot669 lfpak
Contextual Info: PH2920 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 13 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH2920 in SOT669 (LFPAK).

PH3230

Contextual Info: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 02 — 5 September 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).

sot669

Abstract: PH5330 09391
Contextual Info: PH5330 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 07 February 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH5330 in SOT669 (LFPAK)

SOT669

Abstract: sot669 package PH5330
Contextual Info: PH5330 N-channel enhancement mode field-effect transistor M3D748 Rev. 02 — 18 July 2003 Product data 1. Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH5330 in SOT669 (LFPAK). 2. Features

PH8230

Abstract: MO-235 FOOTPRINT LFPAK package
Contextual Info: PH8230 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 23 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH8230 in SOT669 (LFPAK).

110-78

Abstract: sot669 PH3230S PH323
Contextual Info: PH3230S N-channel TrenchMOS logic level FET M3D748 Rev. 01 — 12 February 2003 Preliminary data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230S in SOT669 (LFPAK).

sot669

Abstract: PH5330E 12334
Contextual Info: PH5330E TrenchMOS enhanced logic level FET Rev. 01 — 09 January 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package using TrenchMOS™ technology. 1.2 Features

PHPT60603NY

Contextual Info: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY

Contextual Info: LF PA K 56 PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY.

Contextual Info: PH8230E TrenchMOS enhanced logic level FET Rev. 01 — 04 March 2003 M3D748 Preliminary data 1. Product profile 1.1 Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package using TrenchMOS™ technology.

PH2520U

Abstract: 11406
Contextual Info: PH2520U TrenchMOS ultra low level FET Rev. 01 — 02 May 2003 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PH2520U in SOT669 LFPAK .

Contextual Info: LF PA K 56 PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC.

Contextual Info: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY

sot669 footprint

Contextual Info: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY

Contextual Info: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC

sot669 package

Contextual Info: PA K SOT669 LF LFPAK; Tape reel SMD; standard product orientation 12NC ending 115 Rev. 1 — 26 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel

Contextual Info: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY

sot669 footprint

Contextual Info: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY

Contextual Info: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY

SOT669

Abstract: PH2925U MO-235 MO-235 FOOTPRINT
Contextual Info: PH2925U TrenchMOS ultra low level FET Rev. 01 — 02 May 2003 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PH2925U in SOT669 LFPAK .

PSMN012-100YS

Abstract: 175C D586 sot669 package
Contextual Info: PSMN012-100YS N-channel 100V 13mΩ standard level MOSFET in TO220 Rev. 01 — 22 October 2009 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in a SOT669 package qualified to 175C. This product is designed and qualified for use in computing, communications,

so8 footprint

Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
Contextual Info: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon