SOT669 FOOTPRINT Search Results

LFPAK footprint

Abstract: PH2920 sot669 lfpak
Contextual Info: PH2920 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 13 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH2920 in SOT669 (LFPAK).

PH8230

Abstract: MO-235 FOOTPRINT LFPAK package
Contextual Info: PH8230 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 23 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH8230 in SOT669 (LFPAK).

sot669

Abstract: PH5330E 12334
Contextual Info: PH5330E TrenchMOS enhanced logic level FET Rev. 01 — 09 January 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package using TrenchMOS™ technology. 1.2 Features

PHPT60603NY

Contextual Info: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY

Contextual Info: LF PA K 56 PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY.

Contextual Info: PH8230E TrenchMOS enhanced logic level FET Rev. 01 — 04 March 2003 M3D748 Preliminary data 1. Product profile 1.1 Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package using TrenchMOS™ technology.

PH2520U

Abstract: 11406
Contextual Info: PH2520U TrenchMOS ultra low level FET Rev. 01 — 02 May 2003 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PH2520U in SOT669 LFPAK .

Contextual Info: LF PA K 56 PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC.

sot669 footprint

Abstract: SOT669
Contextual Info: Reflow soldering footprint Footprint information for reflow soldering SOT669 4.7 4.2 0.9 3x 0.25 (2×) 0.25 (2×) 0.6 (4×) 3.45 0.6 (3×) 3.5 2.55 2 0.25 (2×) SR opening = Cu + 0.075 1.1 2.15 3.3 SP opening = Cu − 0.050 0.7 (4×) 1.27 3.81 www.nxp.com

Contextual Info: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY

sot669 footprint

Contextual Info: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY

Contextual Info: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC

Contextual Info: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY

sot669 footprint

Contextual Info: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY

SOT669

Abstract: PH2925U MO-235 MO-235 FOOTPRINT
Contextual Info: PH2925U TrenchMOS ultra low level FET Rev. 01 — 02 May 2003 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PH2925U in SOT669 LFPAK .

so8 footprint

Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
Contextual Info: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon

SOT1023

Abstract: lfpak sot1023 sot669 footprint LFPAK footprint so8 footprint PSMN7R0-30YL PSMN1R2-25YL PSMN1R3-30YL PSMN3R0-30YL PSMN3R5-30YL
Contextual Info: Nine new Trench 6 MOSFETs in a Power-SO8 package The world’s first < 1 mΩ Power-SO8 MOSFETs at 25 V We’ve extended our range of Trench 6 MOSFETs with nine new devices at 25 V, 30 V, 40 V and 80 V in the LFPAK SOT669 and SOT1023 package. NXP leads the way with its range of Trench 6 MOSFETs in

Contextual Info: NXP transistors in LFPAK56 – the true power package for smart efficiency Full power in half the footprint First bipolar transistors in LFPAK/Power-SO8 These high-power bipolar transistors, housed in LFPAK56 Power-SO8 packages, deliver DPAK-like thermal and electrical performance in just half the footprint. Offering reliable,

BT131 equivalent

Abstract: sot669 footprint SOT669 peak and hold diesel BT131-600D list of P channel power mosfet PBSS4480x PMV65XP smd diode GW smd transistor pinout sot23
Contextual Info: New MultiMarket Products Quarterly highlights Semiconductors VOLUME 3 • ISSUE 4 ■ Welcome to the latest issue of Philips’ New MultiMarket Products – Quarterly highlights. In this issue: In addition to discovering some of the key features and benefits of some of our most recent

SOT669

Abstract: electric cooling water pump engine car electric assisted power steering system BUK7507-55B BUK9507-30B buk9508 NXP Semiconductor Automotive fuel cell 5 kW Integrated Starter Alternator Catalytic Converter
Contextual Info: High-performance MOSFETs for automotive systems HPA TrenchMOS – powering automotive innovation Today’s vehicles pack in more features than ever before: engine management units and catalytic converters to reduce environmental impact, ABS and passenger restraint systems for increased safety,

MO-235 FOOTPRINT

Contextual Info: PH2625L N-channel TrenchMOS logic level FET Rev. 01 — 28 April 2004 M3D748 Preliminary data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

MO-235 FOOTPRINT

Abstract: LFPAK footprint sot669 PH8230E MO-235 sot669 package
Contextual Info: PH8230E N-channel TrenchMOS enhanced logic level FET Rev. 03 — 02 March 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

sot669

Abstract: PH6325L
Contextual Info: PH6325L N-channel TrenchMOS logic level FET Rev. 01 — 28 April 2004 M3D748 Preliminary data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

sot669 package

Abstract: LFPAK footprint 7.5B 35 BUK7Y80-150B BUK9Y19-55B SOT669 BUK7Y13-40B BUK9Y11-30B BUK9Y14-40B NXP MOSFETs
Contextual Info: HPA TrenchMOS in LFPAK MOSFETs that pack-a-punch in automotive power Delivering the ultimate in performance, NXP’s new range of High Performance Automotive HPA MOSFETs in the compact, thermally enhanced LFPAK provides reduced on-resistance along with improved ruggedness and thermal performance. All this in a very small package