|
BUK9Y19-55B
|
|
NXP Semiconductors
|
High Reliability LFPAK MOSFETs for Automotive Power Applications; New NXP Automotive LFPAK MOSFETs |
Original |
PDF
|
133.85KB |
2 |
|
BUK9Y19-55B
|
|
NXP Semiconductors
|
BUK9Y19-55B_RC_Thermal_Model |
Original |
PDF
|
53.13KB |
1 |
|
BUK9Y19-55B
|
|
Philips Semiconductors
|
|
Original |
PDF
|
95.28KB |
12 |
|
BUK9Y19-55B,115
|
|
NXP Semiconductors
|
N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 44 A; Qgd (typ): 8 nC; RDS(on): 17@10V19@5V21@4.5V mOhm; Thermal Resistance: 2 K/W; VDSmax: 55 V; Package: SOT669 (LFPAK); Container: Tape reel smd |
Original |
PDF
|
184.73KB |
12 |
|
BUK9Y19-55B/C,115
|
|
NXP Semiconductors
|
BUK9Y19-55B/C - N-channel TrenchMOS logic level FET, SOT669 Package, Standard Marking, Reel Pack, SMD, 7" |
Original |
PDF
|
184.66KB |
12 |
|
BUK9Y19-55B/C2,115
|
|
NXP Semiconductors
|
BUK9Y19-55B/C2 - N-channel TrenchMOS logic level FET, SOT669 Package, Standard Marking, Reel Pack, SMD, 7" |
Original |
PDF
|
184.66KB |
12 |
|
BUK9Y19-55BT/R
|
|
NXP Semiconductors
|
N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 44 A; Qgd (typ): 8 nC; RDS(on): 17@10V19@5V21@4.5V mOhm; Thermal Resistance: 2 K/W; VDSmax: 55 V |
Original |
PDF
|
184.73KB |
12 |