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    SOT666 PACKAGE Search Results

    SOT666 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54ACT825/QKA
    Rochester Electronics LLC 54ACT825/QKA - Dual marked (5962-9161101MKA), D-Type Flip-Flop, 5V, 24-CFP PDF Buy
    TPH1R306PL
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Datasheet
    TPH9R00CQH
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Datasheet
    TPHR8504PL
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Datasheet
    TPH9R00CQ5
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Datasheet

    SOT666 PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PESDXL5UV

    Abstract: SOT666 package philips diode arrays
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PESD3V3L5UV; PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays in SOT666 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package


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    m3d744ot666sca76r76/01/pp11+3pesdxl5uvsot666 packagephilips diode arrays PDF

    PBLS4003V

    Abstract: transistor PDTC PBLS1501V PBLS1503V transistor sc 308 PBLS4001V PBLS4001Y PBLS1501Y PBLS1503Y Philips pmeg
    Contextual Info: AN10361 Philips BISS loadswitch solutions and the SOT666 BISS loadswitch demo board Rev. 01.00 — 20 June 2005 Application note Document information Info Content Keywords BISS, loadswitch, high side switch, supply line switch, SOT666, low VCEsat, RET Abstract


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    an10361ot666pbls4003vtransistor pdtc+8pbls1501vpbls1503vtransistor sc 308pbls4001vpbls4001ypbls1501ypbls1503yphilips pmeg PDF

    BAT54CV

    Abstract: SOT-666
    Contextual Info: BAT54CV Two Schottky barrier double diodes in ultra small SOT666 package Rev. 01 — 22 September 2004 Objective data sheet 1. Product profile 1.1 General description Two planar Schottky barrier double diodes with common cathodes and an integrated guard ring for stress protection encapsulated in a SOT666 ultra small SMD plastic


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    bat54cvot666sot-666 PDF

    BAT54VV

    Contextual Info: BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 01 — 14 September 2004 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small


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    bat54vvot666 PDF

    Contextual Info: BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small


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    bat54vvot666 PDF

    SOT666

    Abstract: BAT54CV
    Contextual Info: BAT54CV Two Schottky barrier double diodes in ultra small SOT666 package Rev. 02 — 15 January 2010 Objective data sheet 1. Product profile 1.1 General description Two planar Schottky barrier double diodes with common cathodes and an integrated guard ring for stress protection encapsulated in a SOT666 ultra small SMD plastic


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    bat54cvot666sot666 PDF

    BAT54VV

    Abstract: diode marking 14
    Contextual Info: BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small


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    bat54vvot666diode marking 14 PDF

    BAS70VV

    Contextual Info: BAS70VV 70 V, 70 mA Schottky barrier triple isolated diode in SOT666 Rev. 01 — 10 September 2004 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small


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    bas70vvot666 PDF

    SMD MARKING CODE 2M

    Abstract: PMEG3002TV
    Contextual Info: PMEG3002TV 0.2 A very low VF MEGA Schottky barrier dual rectifier in SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier dual rectifier


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    pmeg3002tvot666smd marking code 2m PDF

    PMEG3002TV

    Contextual Info: PMEG3002TV 0.2 A very low VF MEGA Schottky barrier dual rectifier in SOT666 package Rev. 01 — 21 October 2005 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier dual rectifier


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    pmeg3002tvot666 PDF

    Contextual Info: PMEG3002TV 0.2 A very low VF MEGA Schottky barrier dual rectifier in SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier dual rectifier


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    pmeg3002tvot666 PDF

    NXP SMD TRANSISTOR MARKING CODE

    Abstract: PMBT3906VS smd "code rc" transistor transistor smd code marking 102 ZI Marking Code transistor
    Contextual Info: PMBT3906VS 40 V, 200 mA PNP/PNP switching transistor Rev. 01 — 20 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device SMD plastic package.


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    pmbt3906vsot666pmbt3904vspmbt3946vpn+6aec-q101771-pmbt3906vs115nxp smd transistor marking codesmd "code rc" transistortransistor smd code marking 102zi marking code transistor PDF

    BCP55

    Abstract: BCX55 PBSS4160V PBSS5160V
    Contextual Info: PBSS4160V 60 V, 1 A NPN low VCEsat BISS transistor Rev. 01 — 23 April 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features • ■ ■


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    pbss4160vot666pbss5160vbcp55+1bcx55 PDF

    transistor smd zc ce

    Abstract: marking code my SMD Transistor npn transistor smd zc TRANSISTOR SMD MARKING CODES transistor smd code marking 102 TRANSISTOR SMD MARKING CODE K TRANSISTOR SMD MARKING CODE NXP SMD TRANSISTOR MARKING CODE smd transistor zc marking code BV SMD Transistor
    Contextual Info: PMBT3904VS 40 V, 200 mA NPN/NPN switching transistor Rev. 01 — 8 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device SMD plastic package.


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    pmbt3904vsot666pmbt3906vspmbt3946vpn+10transistor smd zc cemarking code my smd transistor npntransistor smd zctransistor smd marking codestransistor smd code marking 102transistor smd marking codek transistor smd marking codenxp smd transistor marking codesmd transistor zcmarking code bv smd transistor PDF

    LD39015M25R

    Contextual Info: LD39015 150 mA low quiescent current and low noise voltage regulator Datasheet - production data • Logic-controlled electronic shutdown • Compatible with ceramic capacitors CO = 1 µF • Internal current and thermal limit • Available in SOT666 and SOT23-5L packages


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    ld39015ot666ot23-5lld39n+2docid14003ld39015m25r PDF

    st marking flash

    Abstract: JESD97
    Contextual Info: ESDALC6V1-5P6 ESD protection for high speed interface Features • Diode array topology ■ Low capacitance 12 pF typical ■ Lead-free package SOT666 Benefits ■ Low capacitance uni-directional ESD protection. ■ Low PCB space consuming, 2.5 mm2 max.


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    ot666883g-methodst marking flashjesd97 PDF

    marking code LA SMD

    Abstract: MSD779 PMEG3015EV
    Contextual Info: PMEG3015EV 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier in SOT666 package Rev. 01 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an


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    pmeg3015evot666marking code la smdmsd779 PDF

    MSD779

    Abstract: PMEG3015EV SYM038
    Contextual Info: PMEG3015EV 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier in SOT666 package Rev. 02 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an


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    pmeg3015evot666msd779sym038 PDF

    Contextual Info: PBSS5220V 20 V, 2 A PNP low VCEsat BISS transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.


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    pbss5220vot666pbss4220v PDF

    Contextual Info: STLQ015 150 mA, ultra low quiescent current linear voltage regulator Datasheet - production data • Compatible with ceramic capacitor COUT = 1 µF • Internal current and thermal limit • Package: SOT666-6L • Temperature range: from -40 °C to 125 °C


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    stlq015ot666-6lot666docid17285 PDF

    MARKING CODE SMD IC

    Abstract: PBSS4220V PBSS5220V NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODE N7
    Contextual Info: PBSS5220V 20 V, 2 A PNP low VCEsat BISS transistor Rev. 02 — 8 February 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.


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    pbss5220vot666pbss4220vmarking code smd ic+2nv smd transistortransistor smd marking code n7 PDF

    transistor smd marking CODE n6

    Abstract: PBSS4220V PBSS5220V MARKING CODE SMD IC
    Contextual Info: PBSS4220V 20 V, 2 A NPN low VCEsat BISS transistor Rev. 01 — 6 February 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.


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    pbss4220vot666pbss5220vtransistor smd marking code n6+1marking code smd ic PDF

    BCP52

    Abstract: BCX52 PBSS4160V PBSS5160V
    Contextual Info: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 01 — 20 April 2004 Objective data sheet 1. Product profile 1.1 General description PNP low VCEsat (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V. 1.2 Features • ■ ■


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    pbss5160vot666pbss4160vbcp52+1bcx52 PDF

    Contextual Info: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V.


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    pbss5160vot666pbss4160vbcp52+1bcx52 PDF