SOT666 PACKAGE Search Results
SOT666 PACKAGE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 54ACT825/QKA | Rochester Electronics LLC | 54ACT825/QKA - Dual marked (5962-9161101MKA), D-Type Flip-Flop, 5V, 24-CFP |
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| TPH1R306PL | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQH | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPHR8504PL | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQ5 | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) | Datasheet |
SOT666 PACKAGE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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PESDXL5UV
Abstract: SOT666 package philips diode arrays
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m3d744ot666sca76r76/01/pp11+3 | |
PBLS4003V
Abstract: transistor PDTC PBLS1501V PBLS1503V transistor sc 308 PBLS4001V PBLS4001Y PBLS1501Y PBLS1503Y Philips pmeg
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an10361ot666pbls4003vtransistor pdtc+8 | |
BAT54CV
Abstract: SOT-666
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bat54cvot666sot-666 | |
BAT54VVContextual Info: BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 01 — 14 September 2004 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small |
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bat54vvot666 | |
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Contextual Info: BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small |
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bat54vvot666 | |
SOT666
Abstract: BAT54CV
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bat54cvot666sot666 | |
BAT54VV
Abstract: diode marking 14
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bat54vvot666diode marking 14 | |
BAS70VVContextual Info: BAS70VV 70 V, 70 mA Schottky barrier triple isolated diode in SOT666 Rev. 01 — 10 September 2004 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small |
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bas70vvot666 | |
SMD MARKING CODE 2M
Abstract: PMEG3002TV
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pmeg3002tvot666smd marking code 2m | |
PMEG3002TVContextual Info: PMEG3002TV 0.2 A very low VF MEGA Schottky barrier dual rectifier in SOT666 package Rev. 01 — 21 October 2005 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier dual rectifier |
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pmeg3002tvot666 | |
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Contextual Info: PMEG3002TV 0.2 A very low VF MEGA Schottky barrier dual rectifier in SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier dual rectifier |
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pmeg3002tvot666 | |
NXP SMD TRANSISTOR MARKING CODE
Abstract: PMBT3906VS smd "code rc" transistor transistor smd code marking 102 ZI Marking Code transistor
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pmbt3906vsot666pmbt3904vspmbt3946vpn+6 | |
BCP55
Abstract: BCX55 PBSS4160V PBSS5160V
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pbss4160vot666pbss5160vbcp55+1 | |
transistor smd zc ce
Abstract: marking code my SMD Transistor npn transistor smd zc TRANSISTOR SMD MARKING CODES transistor smd code marking 102 TRANSISTOR SMD MARKING CODE K TRANSISTOR SMD MARKING CODE NXP SMD TRANSISTOR MARKING CODE smd transistor zc marking code BV SMD Transistor
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pmbt3904vsot666pmbt3906vspmbt3946vpn+10 | |
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LD39015M25RContextual Info: LD39015 150 mA low quiescent current and low noise voltage regulator Datasheet - production data • Logic-controlled electronic shutdown • Compatible with ceramic capacitors CO = 1 µF • Internal current and thermal limit • Available in SOT666 and SOT23-5L packages |
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ld39015ot666ot23-5lld39n+2 | |
st marking flash
Abstract: JESD97
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ot666883g-methodst marking flashjesd97 | |
marking code LA SMD
Abstract: MSD779 PMEG3015EV
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pmeg3015evot666marking code la smdmsd779 | |
MSD779
Abstract: PMEG3015EV SYM038
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pmeg3015evot666msd779sym038 | |
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Contextual Info: PBSS5220V 20 V, 2 A PNP low VCEsat BISS transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. |
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pbss5220vot666pbss4220v | |
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Contextual Info: STLQ015 150 mA, ultra low quiescent current linear voltage regulator Datasheet - production data • Compatible with ceramic capacitor COUT = 1 µF • Internal current and thermal limit • Package: SOT666-6L • Temperature range: from -40 °C to 125 °C |
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stlq015ot666-6lot666docid17285 | |
MARKING CODE SMD IC
Abstract: PBSS4220V PBSS5220V NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODE N7
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pbss5220vot666pbss4220vmarking code smd ic+2 | |
transistor smd marking CODE n6
Abstract: PBSS4220V PBSS5220V MARKING CODE SMD IC
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pbss4220vot666pbss5220vtransistor smd marking code n6+1 | |
BCP52
Abstract: BCX52 PBSS4160V PBSS5160V
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pbss5160vot666pbss4160vbcp52+1 | |
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Contextual Info: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V. |
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pbss5160vot666pbss4160vbcp52+1 | |