SOT666 PACKAGE Search Results
SOT666 PACKAGE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 54ACT825/QKA |
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54ACT825/QKA - Dual marked (5962-9161101MKA), D-Type Flip-Flop, 5V, 24-CFP |
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| TPH1R306PL |
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N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQH |
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MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQ5 |
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N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPHR8504PL |
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N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet |
SOT666 PACKAGE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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PBLS4003V
Abstract: transistor PDTC PBLS1501V PBLS1503V transistor sc 308 PBLS4001V PBLS4001Y PBLS1501Y PBLS1503Y Philips pmeg
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AN10361 OT666 OT666, PBLS4003V transistor PDTC PBLS1501V PBLS1503V transistor sc 308 PBLS4001V PBLS4001Y PBLS1501Y PBLS1503Y Philips pmeg | |
BAT54CV
Abstract: SOT-666
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BAT54CV OT666 OT666 BAT54CV SOT-666 | |
BAT54VVContextual Info: BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 01 — 14 September 2004 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small |
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BAT54VV OT666 BAT54VV | |
BAS70VVContextual Info: BAS70VV 70 V, 70 mA Schottky barrier triple isolated diode in SOT666 Rev. 01 — 10 September 2004 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small |
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BAS70VV OT666 OT666 BAS70VV | |
PMEG3002TVContextual Info: PMEG3002TV 0.2 A very low VF MEGA Schottky barrier dual rectifier in SOT666 package Rev. 01 — 21 October 2005 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier dual rectifier |
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PMEG3002TV OT666 OT666 PMEG3002TV | |
NXP SMD TRANSISTOR MARKING CODE
Abstract: PMBT3906VS smd "code rc" transistor transistor smd code marking 102 ZI Marking Code transistor
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PMBT3906VS OT666 PMBT3906VS PMBT3904VS PMBT3946VPN AEC-Q101 771-PMBT3906VS115 NXP SMD TRANSISTOR MARKING CODE smd "code rc" transistor transistor smd code marking 102 ZI Marking Code transistor | |
BCP55
Abstract: BCX55 PBSS4160V PBSS5160V
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PBSS4160V OT666 PBSS5160V. BCP55 BCX55. BCX55 PBSS4160V PBSS5160V | |
LD39015M25RContextual Info: LD39015 150 mA low quiescent current and low noise voltage regulator Datasheet - production data • Logic-controlled electronic shutdown • Compatible with ceramic capacitors CO = 1 µF • Internal current and thermal limit • Available in SOT666 and SOT23-5L packages |
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LD39015 OT666 OT23-5L OT666 OT23-5L LD39n DocID14003 LD39015M25R | |
marking code LA SMD
Abstract: MSD779 PMEG3015EV
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PMEG3015EV OT666 OT666 marking code LA SMD MSD779 PMEG3015EV | |
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Contextual Info: PBSS5220V 20 V, 2 A PNP low VCEsat BISS transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. |
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PBSS5220V OT666 PBSS4220V. PBSS5220V | |
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Contextual Info: STLQ015 150 mA, ultra low quiescent current linear voltage regulator Datasheet - production data • Compatible with ceramic capacitor COUT = 1 µF • Internal current and thermal limit • Package: SOT666-6L • Temperature range: from -40 °C to 125 °C |
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STLQ015 OT666-6L OT666 STLQ015 DocID17285 | |
MARKING CODE SMD IC
Abstract: PBSS4220V PBSS5220V NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODE N7
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PBSS5220V OT666 PBSS4220V. PBSS5220V MARKING CODE SMD IC PBSS4220V NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODE N7 | |
transistor smd marking CODE n6
Abstract: PBSS4220V PBSS5220V MARKING CODE SMD IC
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PBSS4220V OT666 PBSS5220V. PBSS4220V transistor smd marking CODE n6 PBSS5220V MARKING CODE SMD IC | |
BCP52
Abstract: BCX52 PBSS4160V PBSS5160V
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PBSS5160V OT666 PBSS4160V. BCP52 BCX52. BCX52 PBSS4160V PBSS5160V | |
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MARKING SMD IC CODE 2100
Abstract: TRANSISTOR SMD MARKING CODE 210 philips N7 PBSS5220V MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE OA
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PBSS5220V OT666 MARKING SMD IC CODE 2100 TRANSISTOR SMD MARKING CODE 210 philips N7 PBSS5220V MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE OA | |
transistor smd zc ce
Abstract: PMBT3904VS smd "code rc" transistor MARKING CODE ZC smd transistor zc Marking Code SMD zc NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE transistor smd zc 11 transistor smd code marking 101
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PMBT3904VS OT666 PMBT3904VS PMBT3906VS PMBT3946VPN 771-PMBT3904VS115 transistor smd zc ce smd "code rc" transistor MARKING CODE ZC smd transistor zc Marking Code SMD zc NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE transistor smd zc 11 transistor smd code marking 101 | |
BCP55
Abstract: BCX55 PBSS4160V PBSS5160V
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PBSS4160V OT666 PBSS5160V. BCP55 BCX55 BCX55 PBSS4160V PBSS5160V | |
BCP52
Abstract: BCX52 PBSS4160V PBSS5160V 14508
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PBSS5160V OT666 PBSS4160V. BCP52 BCX52 BCX52 PBSS4160V PBSS5160V 14508 | |
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Contextual Info: PBSS4220V 20 V, 2 A NPN low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. |
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PBSS4220V OT666 PBSS5220V. PBSS4220V | |
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Contextual Info: LITE-ON SEMICONDUCTOR L02ESD5V0F6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT563 The ESD5V0F6-5 is a low capacitance 5-fold ESD array in the ultra small SOT666 plastic package designed to protect up to |
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L02ESD5V0F6-5 OT666 OT563 OT563 100mV | |
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Contextual Info: PBSS4160V 60 V, 1 A NPN low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features ̈ ̈ ̈ ̈ |
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PBSS4160V OT666 PBSS5160V. BCP55 BCX55 PBSS4160V | |
L02ESD5V0F6-5
Abstract: 15KV
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L02ESD5V0F6-5 OT563 L02ESD5V0F6-5 OT666 15KV | |
SOT353-1 thermal resistance
Abstract: PMP4501G PMP4501V PMP5201G PMP5201V PMP5201Y PMP5501G PMP5501V PMP5501Y SOT353-1 footprint
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PMP5501V; PMP5501G; PMP5501Y OT666 OT363 SC-88) PMP5501V OT666 PMP5201V PMP4501V SOT353-1 thermal resistance PMP4501G PMP4501V PMP5201G PMP5201V PMP5201Y PMP5501G PMP5501V PMP5501Y SOT353-1 footprint | |
15KVContextual Info: LITE-ON SEMICONDUCTOR L02ESD5V0F6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT563 The ESD5V0F6-5 is a low capacitance 5-fold ESD array in the ultra small SOT666 plastic package designed to protect up to |
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L02ESD5V0F6-5 OT563 OT666 100mV 15KV | |