SOT623 Search Results

SOT-623

Abstract: k 3683 MS-034
Contextual Info: PDF: 2003 Jan 24 Philips Semiconductors Package outline BGA658: plastic ball grid array package; 658 balls; body 40 x 40 x 1.75 mm SOT623-1 B D A D1 ball A1 index area A E1 E A2 A1 detail X C e1 ∅v M C A B b 1/2 e e y y1 C ∅w M C AK AH AF AD AB Y V T P

Contextual Info: Package outline BGA658: plastic ball grid array package; 658 balls; body 40 x 40 x 1.75 mm SOT623-1 B D A D1 ball A1 index area A E1 E A2 A1 detail X C e1 b 1/2 e e y y1 C ∅v M C A B ∅w M C AK AH AF AD AB Y V T P M K H F D B AJ e AG AE AC AA W U e2 R N

SOT-623

Abstract: MS-034 sot623 MS 034
Contextual Info: PDF: 2001 May 16 Philips Semiconductors Package outline BGA658: plastic ball grid array package; 658 balls; body 40 x 40 x 1.75 mm SOT623-1 B D A D1 ball A1 index area A E1 E A2 A1 detail X C e1 b e AJ AG AE AC AA W U R N L J G E C v M B ∅w M y y1 C v M A

Contextual Info: PC board footprint Philips Semiconductors Footprint information for reflow soldering of BGA658 package SOT623-1 Hx P P Hy see detail X Generic footprint pattern Refer to the package outline drawing for actual layout solder land solder paste deposit solder land plus solder paste

TBN4226

Abstract: TBN4226E TBN4226KF TBN4226U SOT623F
Contextual Info: TBN4226 Series Semiconductor Si NPN Transistor Unit in mm SOT-323 □ Applications 2.1±0.1 1.25±0.05 - VHF and UHF low noise amplifier 3 0.30±0.1 □ Features 1 1.30±0.1 2.0±0.2 - Wide band amplifier 2 - High gain bandwidth product 0.15±0.05 fT = 6 GHz at VCE = 3 V, IC = 7 mA

SOT-623

Abstract: FJZ733 FJZ945
Contextual Info: FJZ733 FJZ733 Low Frequency Amplifier 3 • Collector-Base Voltage : VCBO= -60V • Complement to FJZ945 2 1 SOT-623F 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

2N5459

Abstract: 2N5485 mpf102 KSK161 mpf102 equivalent J107 diode J113 equivalent J201 N-channel JFET transistor j210 2N5485 MMBFJ177
Contextual Info: Discrete JFETs Products PD VGS off BVGDS Power (V) Dissipation Min (V) Typ (V) Max (V) (mW) IDSS GFS @ ID (uA) @ VDS (V) Min (mA) Max (mA) @ VDS (V) Min (mS) Typ (mS) Max (mS) RDS (Ohm) ID (off) (uA) SOT-223 N-Channel JFTJ105 25 1000 4.5 - 10 1 5 500 - 15

Contextual Info: FJZ733 FJZ733 Low Frequency Amplifier • Collector-Base Voltage : VCBO= -60V • Complement to FJZ945 3 2 1 SOT-623F 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

datasheet 4019

Abstract: Junction-FET 4019 data STK596K kst40 SOT-623
Contextual Info: STK596K Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information

"marking j9"

Abstract: SOT-623 IC 4015 STJ828K kst40 sot623 marking j9 marking kst
Contextual Info: STJ828K Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.

ic 4075 datasheet

Abstract: SRA2204K
Contextual Info: SRA2204K Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: SRA2206K Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: SRC1219K Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

ic or 4071 datasheet

Abstract: IC 4071 SRC1219K
Contextual Info: SRC1219K Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

SRC1205K

Contextual Info: SRC1205K Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

SRC1202K

Contextual Info: SRC1202K Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

SRC1201K

Contextual Info: SRC1201K Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

623F

Abstract: TBN6301 TBN6301E TBN6301KF TBN6301S TBN6301U SOT-623 10Preliminary SOT623F
Contextual Info: Preliminary Specification TBN6301 series NPN SILICON RF TRANSISTOR Unit in mm SOT323 □ Applications 2.1±0.1 1.25±0.05 3 0.30±0.1 □ Features 1 1.30±0.1 2.0±0.2 - UHF and VHF wide band amplifier 2 - High gain bandwidth product 0.15±0.05 fT = 6 GHz @ VCE = 3 V, IC = 10 mA

TBN4228U

Abstract: TBN4228 SOT623F SO1 SOT S21 SOT23
Contextual Info: TBN4228 Series Semiconductor Si NPN Transistor Unit in mm SOT-323 □ Applications 2.1±0.1 1.25±0.05 3 0.30±0.1 □ Features 1 1.30±0.1 2.0±0.2 - VHF and UHF low noise amplifier 2 - High gain bandwidth product fT = 9 GHz at VCE = 3 V, IC = 5 mA 0.15±0.05

130-082

Abstract: ic 38438 38438 IC 112246 128777 890 f 642 ic pdf datasheet PIN CONFIGURATION IC 555 THN6201 dc 38438 33171
Contextual Info: THN6201 series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Applications LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain

121-351

Abstract: 35219 ic pt 2358 57290 76546 0 281 002 468 460-1 PIN CONFIGURATION IC 555 S 196 156 230 T125
Contextual Info: THN6301 Series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure Pin Configuration NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB Typ. @ f = 1 GHz, VCE = 8 V, IC =15 mA

623f

Abstract: SOT-623F IC BARCODE
Contextual Info: SOT-623F Tape and Reel Data SOT-623F Packaging Configuration: Figure 1.0 Packaging Description: SOT-623F parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated

Contextual Info: SRC1205K Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process