SOT523F Search Results

Contextual Info: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on

SC-89

Abstract: diode marking N9 DAN222 n923 diode N9
Contextual Info: WEITRON WAN222 Surface Mount Switching Diode SWITCHING DIODE 100m AMPERRES 80 VOLTS Features: *Extremely High Switching Speedff *Low Reverse Leakage Current *Small Outline Surface Mount SC-89 Package *High Reliability SC-89 SOT-523F Applications: Ultra High Speed Switching

transistor dtc114

Abstract: DTC114 df3200 dtc123je ic dtc114 DTC114EE DTC114TE DTC114YE DTC123EE DTC124EE
Contextual Info: DTC114EE Series Bias Resistor Transistor NPN Silicon 3 P b Lead Pb -Free COLLECTOR 3 1 2 R1 1 BASE R2 SC-89 (SOT-523F) 2 EMITTER Maximum Ratings (TA=25°C unless otherwise noted) Rating Symbol VCEO VCBO Value 50 Unit V 50 V IC 100 mA Symbol Max Unit PD 200

Contextual Info: FJY3002R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

FJY3008R

Abstract: FJY4008R CS08E
Contextual Info: FJY3008R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=47KΩ, R2=22KΩ • Complement to FJY4008R Eqivalent Circuit C C S08 E B E B SOT - 523F Absolute Maximum Ratings *

FJY3011R

Abstract: FJY4011R
Contextual Info: FJY4011R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=22KΩ • Complement to FJY3011R Eqivalent Circuit C C S61 E B E B SOT - 523F Absolute Maximum Ratings *

SRC1203EF

Abstract: KSR-4003-000
Contextual Info: SRC1203EF Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

marking code RB

Abstract: SRC1212EF
Contextual Info: SRC1212EF Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

STJ828EF

Abstract: kst40
Contextual Info: STJ828EF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.

IC 4016

Abstract: data sheet for IC 4016 4016 ic data sheet of ic 4016 SRA2219EF
Contextual Info: SRA2219EF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

ic 4001 datasheet

Abstract: ic 4001 SRC1201EF
Contextual Info: SRC1201EF Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

APPLICATION OF IC 4033

Abstract: data sheet of 4033 SRC1207EF 4033 IC OF SILICON TRANSISTOR IC 4033
Contextual Info: SRC1207EF Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: FJY4008R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=47KΩ, R2=22KΩ • Complement to FJY3008R Eqivalent Circuit C C S58 E B E B SOT - 523F Absolute Maximum Ratings *

FJY3001R

Abstract: FJY4001R S01E
Contextual Info: FJY3001R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=4.7KΩ, R2=4.7KΩ • Complement to FJY4001R Eqivalent Circuit C C S01 E B E B SOT - 523F Absolute Maximum Ratings *

FJY3007R

Abstract: FJY4007R transistor S57
Contextual Info: FJY4007R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=22KΩ, R2=47KΩ • Complement to FJY3007R Eqivalent Circuit C C S57 E B E B SOT - 523F Absolute Maximum Ratings *

FJY3013R

Abstract: FJY4013R
Contextual Info: FJY3013R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=2.2KΩ, R2=47KΩ • Complement to FJY4013R Eqivalent Circuit C C S13 E B E B SOT - 523F Absolute Maximum Ratings *

FJY3010R

Abstract: FJY4010R S10EB
Contextual Info: FJY3010R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=10KΩ • Complement to FJY4010R Eqivalent Circuit C C S10 E B E B SOT - 523F Absolute Maximum Ratings *

DTC114

Abstract: transistor dtc114 dtc114 marking 24 DTC114EE DTC114TE DTC114YE DTC123EE DTC124EE DTC143EE DTC143TE
Contextual Info: DTC114EE Series Bias Resistor Transistor NPN Silicon 3 P b Lead Pb -Free COLLECTOR 3 1 1 BASE SC-89 (SOT-523F) R2 2 EMITTER Maximum Ratings (TA=25°C unless otherwise noted) Rating 2 R1 Symbol VCEO VCBO Value 50 Unit V 50 V IC 100 mA Symbol Max Unit PD 200

BC847B-1F

Abstract: BC847A BC847B BC847C SC-89
Contextual Info: BC847AT/BT/CT COLLECTOR 3 General Purpose Transistor NPN Silicon 33 1 1 BASE 2 SC-89 SOT-523F 2 EMITTER M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous

Contextual Info: 2SA1774 PNP * “G” Lead Pb -Free 33 1 2 SC-89 (SOT-523F) WEITRON http://www.weitron.com.tw 2SA1774 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Min Typ Max hFE 120 - 560 - VCE(sat) - - -0.5 Vdc Cob - 4.0 5.0 PF

Contextual Info: BC847AT/BT/CT COLLECTOR 3 General Purpose Transistor NPN Silicon 33 1 1 BASE * “G” Lead Pb -Free 2 SC-89 (SOT-523F) 2 EMITTER M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

ic 4013

Abstract: ic 4013 DATASHEET 4013 DATASHEET UC 4013 4013 FT 4013 SRA2205EF KSR-4013-000
Contextual Info: SRA2205EF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

FJY4003R

Abstract: FJY3003R
Contextual Info: FJY3003R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=22KΩ, R2=22KΩ • Complement to FJY4003R Eqiuvalent Circuit C C S03 E B E B SOT - 523F Absolute Maximum Ratings *

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint