SOT416 ON Search Results

CHDTA144WEGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA144WEGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-75/SOT-416 * Small surface mounting type. SC-75/SOT416

transistor BR 471 A

Abstract: 3pin surface mount transistor BP317 PRF949 SC75 SC-75 MARKING CODE V0
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PRF949 UHF wideband transistor Preliminary specification 1999 Oct 29 Philips Semiconductors Preliminary specification UHF wideband transistor PRF949 PINNING SOT416 SC75 FEATURES • Small size PIN • Low noise 1

TRANSISTOR SMD MARKING CODES

Abstract: PBSS2540E PBSS3540E SC-75 SMD mosfet MARKING code T
Contextual Info: PBSS3540E 40 V, 500 mA PNP low VCEsat BISS transistor Rev. 01 — 3 May 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E.

nx3020

Contextual Info: NX3020NAKT 30 V, 180 mA N-channel Trench MOSFET 30 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

PMR280UN

Abstract: PMR370XN PMR290XN PMR400UN PMR780SN SC75 SC-75 SC89
Contextual Info: 20 V, 30 V and 60 V N-channel MOSFETs in SOT416 SC-75 A new dimension in power Leading the way in miniaturization and Trench technology, NXP’s innovative TrenchMOS portfolio delivers excellent performance from the smallest devices. As consumers demand smaller, efficient

TRANSISTOR SMD MARKING CODES

Abstract: PBSS2515E PBSS3515E SC-75 MARKING CODE SMD IC
Contextual Info: PBSS2515E 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 01 — 18 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBSS3515E.

marking code A09 SMD Transistor

Contextual Info: PBSS3540E 40 V, 500 mA PNP low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E.

PBSS2515E

Abstract: PBSS3515E SC-75 MARKING CODE SMD IC
Contextual Info: PBSS3515E 15 V, 0.5 A PNP low VCEsat BISS transistor Rev. 02 — 27 April 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

2N7002PT

Contextual Info: 2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

marking A1 TRANSISTOR

Abstract: 2PA1774 2PC4617 2PC4617Q 2PC4617R 2PC4617S SC-75
Contextual Info: 2PC4617 NPN general-purpose transistor Rev. 04 — 25 November 2004 Product data sheet 1. Product profile 1.1 General description NPN transistor in a SOT416 SC-75 plastic package. The PNP complement is 2PA1774. 1.2 Features • Low current (max. 150 mA)

transistor smd zy

Abstract: BAS116T SC-75 MLB754
Contextual Info: BAS116T Single low leakage current switching diode Rev. 01 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description Single low leakage current switching diode, encapsulated in a SOT416 SC-75 ultra small Surface-Mounted Device (SMD) plastic package.

2N7002BKT

Abstract: marking code Z3
Contextual Info: 2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

TRANSISTOR SMD MARKING CODES

Abstract: PBSS2540E SC-75 TRANSISTOR SMD MARKING CODE 04
Contextual Info: PBSS2540E 40 V, 500 mA NPN low VCEsat BISS transistor Rev. 01 — 4 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBS3540E.

PBSS2515E

Abstract: PBSS3515E SC-75 MARKING CODE SMD IC MOSFET TRANSISTOR SMD MARKING CODE 7
Contextual Info: PBSS2515E 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 02 — 21 April 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

2N7002PT

Abstract: nxp marking code Z1 SC-75 marking code BV SMD Transistor transistor smd code marking nc
Contextual Info: 2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

BAW56TT1G

Abstract: C5551
Contextual Info: BAW56TT1G Dual Switching Diode Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS TA = 25C Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500

BAV70

Abstract: BAV70TT1G
Contextual Info: BAV70TT1G Dual Switching Diode Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS TA = 25C Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500

BAW62

Abstract: DA121TT1G SC-75
Contextual Info: DA121TT1G Silicon Switching Diode Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS TA = 25C Rating Symbol Max Unit Continuous Reverse Voltage VR 80 V Recurrent Peak Forward Current

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

NTA4001N

Abstract: NTA4001NT1 NTA4001NT1G SC-75
Contextual Info: NTA4001N Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection, SC-75 Features •ăLow Gate Charge for Fast Switching •ăSmall 1.6 x 1.6 mm Footprint •ăESD Protected Gate •ăPb-Free Package is Available V BR DSS RDS(on) Typ @ VGS

charging ic laptop motherboard

Abstract: ic laptop motherboard 12V cooler MOTOR TSOP6 SOT23 package s1 sot363 voltage controller PMN23UN PMN34LN PMN34UN PMN40LN
Contextual Info: NXP 30-, 20-, and 12-V N- and P-channel MOSFETs PMNseries in TSOP6 packages Ultra-small µTrenchMOS MOSFETs in a TSOP6 package and 94% lower RDS ON than SOT23 Combining our expertise in package miniaturization and advanced Trench technology, these ultra-small µTrenchMOS™ MOSFETs, housed in tiny TSOP6 packages, deliver an on resistance

NTA7002NT1G

Abstract: NTA7002N NTA7002NT1 SC-75
Contextual Info: NTA7002N Small Signal MOSFET 30 V, 154 mA, Single, N-Channel, Gate ESD Protection, SC-75 Features •ăLow Gate Charge for Fast Switching •ăSmall 1.6 x 1.6 mm Footprint •ăESD Protected Gate •ăPb-Free Package is Available RDS on Typ @ VGS V(BR)DSS

DAN222G

Abstract: DAN222T1G DAN222
Contextual Info: DAN222G Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications, where board space is at a