SOT363 FOOTPRINT Search Results

PBSS9110Y

Contextual Info: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features „ „ „ „ SOT363 package Low collector-emitter saturation voltage VCEsat

PBSS9110Y

Contextual Info: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 01 — 9 June 2004 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features • ■ ■ ■ SOT363 package Low collector-emitter saturation voltage VCEsat

PBSS8110Y

Abstract: PPBSS8110Y
Contextual Info: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 01 — 2 June 2004 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features • ■ ■ ■ SOT363 package Low collector-emitter saturation voltage VCEsat

C 102 transistor equivalent table

Abstract: PBSS8110Y PPBSS8110Y
Contextual Info: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features „ „ „ „ SOT363 package Low collector-emitter saturation voltage VCEsat

Contextual Info: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ̈ ̈ ̈ ̈ SOT363 package Low collector-emitter saturation voltage VCEsat

Contextual Info: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ̈ ̈ ̈ ̈ SOT363 package Low collector-emitter saturation voltage VCEsat

sot363 wave soldering

Contextual Info: Wave soldering footprint Footprint information for wave soldering of plastic surface-mounted package; 6 leads SOT363 1.5 0.3 2.5 4.5 1.5 1.3 1.3 2.45 5.3 preferred transport direction during soldering solder land solder resist occupied area Dimensions in mm

Contextual Info: CSH210R ? TX-RX and diversity switch for mobile communications ? GaAs PHEMT Technology ? Low Insertion Loss ? No Supply Voltage Needed ? Positive Control Voltage ? SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions!

CSH210

Contextual Info: CSH210 ? TX-RX and diversity switch for mobile communications ? GaAs PHEMT Technology ? Low Insertion Loss ? No Supply Voltage Needed ? Positive Control Voltage ? SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions!

SC-70-6

Abstract: Ao7417
Contextual Info: AO7417 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7417/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.5V, in the small SOT363 footprint. This device is suitable for

AO7401

Contextual Info: AO7401 30V P-Channel MOSFET General Description Product Summary The AO7401 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide

AO7415

Abstract: AO7415L SC-70-6
Contextual Info: AO7415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7415 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide

Contextual Info: AO7417 20V P-Channel MOSFET General Description Product Summary The AO7417 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.5V, in the small SOT363 footprint. This device is suitable for use in buck convertor.

AO7405

Abstract: SC706
Contextual Info: AO7405 30V P-Channel MOSFET General Description Product Summary VDS The AO7405 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide

MSD901

Abstract: 10939
Contextual Info: PMGD8000LN Dual µTrenchMOS logic level FET Rev. 01 — 27 February 2003 MBD128 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMGD8000LN in SOT363 SC-88 .

smd diode marking A3 sot363

Abstract: sot363 aaa
Contextual Info: BAT754L Schottky barrier triple diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Three internal isolated planar Schottky barrier diodes with an integrated guard ring for stress protection,encapsulated in very small SOT363 Surface-Mounted Device SMD

AO7405

Abstract: AO7405L SC-70-6 SOT363 footprint
Contextual Info: AO7405 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7405 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide

M1305

Abstract: AO7415 AO7415L SC-70-6 m-1305
Contextual Info: AO7415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7415 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide

Contextual Info: AO7417 20V P-Channel MOSFET General Description Product Summary The AO7417 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.5V, in the small SOT363 footprint. This device is suitable for use in buck convertor.

259 sot363

Abstract: AO7405 AO7405L SC-70-6
Contextual Info: AO7405 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7405 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide

Contextual Info: Reflow soldering footprint Footprint information for reflow soldering of plastic surface-mounted package; 6 leads SOT363 2.65 2.35 1.5 0.4 2x 0.6 0.5 (4×) (4×) 0.5 (4×) 0.6 (2×) 0.6 (4×) 1.8 solder land solder land plus solder paste solder paste deposit

mmic code marking P 18

Abstract: MMIC marking CODE 06 rf mmic marking code 09 SOT363 CSH210 rf mmic marking code 26 SOT363
Contextual Info: GaAs MMIC CSH210 Preliminary Datasheet • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • No supply Voltage needed • Positive Operating voltage • SOT363 package 2mm x 2mm ESD: Electrostatic discharge sensitive device

k1 nxp

Contextual Info: BAT74S Dual Schottky barrier diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection. Two electrically isolated Schootky barrier diodes encapsulated in a very small SOT363

CSH210

Contextual Info: CSH210 • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • No Supply Voltage Needed • Positive Control Voltage • SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions!