SOT23-6 MARKING CODE 52 Search Results

marking code pa sot-26

Abstract: smd SOT26 SMD MARKING CODE 26 sot-363 CMDD6001 smd transistor marking PA SMD MARKING CODE sot 26 smd marking 30 SOD 23 marking CODE R SMD DIODE on semiconductor marking code sot
Contextual Info: PRODUCT announcement Ultra Low Leakage Diodes in SOT-26, SOT-23, SOT-363, SOD-323, SOD-523 and SOT-563 packages SOT-26 SOT-23 SOT-363 SOD-323 SOD-523 SOT-563 features • Ultra Low Leakage: 500pA max. • VRRM: 100Volts • Available in six space saving SMD packages

smd diode sod-323 marking code 500

Abstract: diode smd marking code 631 marking CODE R SMD DIODE smd diode marking code 500 C55 MARKING SMD MARKING CODE D1 D1 SMD CODE MARKING SMD MARKING CODE smd code marking pa transistor smd code marking nc
Contextual Info: PRODUCT announcement High Current/Low VF Schottky Diodes features SOT-563 SOT-523 • High Current: 0.5 Amps Single and Dual • Low VF: 0.31 Volts Typ. @ 100mA Single SOD-323 SOT-23F SOT-23 Single Dual Single • Available in five space saving SMD packages

SOT89 transistor marking

Abstract: SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter
Contextual Info: PRODUCT announcement New Tiny Packages High Voltage Small Signal Transistors SOT-563 SOT-523 Dual Single SOT-23 SOT-89 SOT-223 SOT-228 Single Single Single Dual features • VCEO = 160V NPN , 150V (PNP) • IC = 600mA (NPN), 500mA (PNP) • Ideal for high voltage amplifier applications

top marking 3c sot23

Abstract: smd code marking sot23 sot-23 pinout diode smd marking code 631 diode SOD-323 Dual Diodes In SOT Package smd transistor marking PA smd diode marking sot-23 sot-23 marking PA marking CODE R SMD DIODE
Contextual Info: PRODUCT announcement Low Leakage Diodes in SOT-23, SOD-323, SOD-523 and SOT-563 packages SOT-23 SOD-323 SOD-523 SOT-563 features • Low Leakage: 1.0nA max. • VRRM: 200 Volts • Available in four space saving SMD packages Sample devices are available description

LL-34 zener diode

Abstract: LL-41 diode marking
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMMSZ52XXB ZENER DIODE SURFACE MOUNT SILICON ZENER DIODE 3 1 2  1 1 2 2 SOD-323 SOD-523 FEATURES 2 1 LL-34 SYMBOL SOD-123 / SOD-323 SOD-523 / LL34 SOT-23  SOD-123 JEDEC TO-236 * Low reverse leakage current  2 SOT-23

Zener Diode SOT-23 marking kh5

Abstract: KE2 diode KE5 diode diode marking kk4 Zener Diode kh5 DIODE ZENER Kf2 marking code 17 surface mount diode MMBZ5221B-MMBZ5259B diode zener marking 58 Zener Diode SOT-23 marking B
Contextual Info: BL Galaxy Electrical Production specification 350mW Surface Mount Zener Diode MMBZ5221B-5259B FEATURES Pb z Planar Die Construction. z 350mw Power Dissipation. z General purpose, medium current. z Ideally Suited For Automated Assembly Prcesses. Lead-free APPLICATIONS

Contextual Info: DMG3402L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features ID TA = +25°C 4A 3A 2A RDS ON V(BR)DSS 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V 30V • Low On-Resistance:  Low Gate Threshold Voltage  Low Input Capacitance

TSM2323

Abstract: TSM2323CX TSM2323CXRF TSM232
Contextual Info: TSM2323 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 39 @ VGS = -4.5V -4.7 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Block Diagram ● Advance Trench Process Technology ●

Contextual Info: PPJA3414 20V N-Channel Enhancement Mode MOSFET Voltage 20 V SOT-23 5.2A Current Unit: inch mm Features  RDS(ON) , VGS@4.5V, ID@5.2A<36mΩ  RDS(ON) , VGS@2.5V, ID@3.2A<52mΩ  RDS(ON) , VGS@1.8V, ID@1.5A<92mΩ  Advanced Trench Process Technology

Contextual Info: DMG2305UX P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max Package -20V 52mΩ @VGS = -4.5V 100mΩ @VGS = -2.5V SOT23 ID TA = +25°C -5.0A -3.6A • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Contextual Info: DMG3402L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V BR DSS RDS(ON) 30V 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V • • • • • • • • ID TA = +25°C 4A 3A 2A Low On-Resistance: Low Gate Threshold Voltage

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

TSM2323

Abstract: TSM2323CXRF
Contextual Info: TSM2323 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 39 @ VGS = -4.5V -4.7 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Block Diagram ● Advance Trench Process Technology ●

Contextual Info: TSM2305 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 ID (A) 52 @ VGS =-4.5V -3.2 71 @ VGS =-2.5V -2.7 108 @ VGS =-1.8V -2.0 Block Diagram Features ● Advance Trench Process Technology ●

Contextual Info: TSM3400 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 28 @ VGS = 10V 5.8 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

MOSFET N SOT-23

Abstract: TSM3400CX marking 8A sot-23 n-channel mosfet transistor Power MOSFET N-Channel sot-23 ultra low igss pA TSM3400 n-channel mosfet SOT-23
Contextual Info: TSM3400 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 28 @ VGS = 10V 5.8 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

MOSFET SOT-23 3400

Abstract: MTN3400N3 SOT 23 Package equivalent
Contextual Info: Spec. No. : C414N3 Issued Date : 2007.07.05 Revised Date : 2007.12.18 Page No. : 1/ 7 CYStech Electronics Corp. 30V N-CHANNEL Enhancement Mode MOSFET MTN3400N3 Features • VDS=30V RDS ON =33mΩ@VGS=4.5V, ID=5A RDS(ON)=52mΩ@VGS=2.5V, ID=4A • Low on-resistance

C5V6 ph

Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Contextual Info: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER