CMOD3003 Search Results

diode Ir 150

Abstract: marking code 3c
Contextual Info: CMOD3003 SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOD3003 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini surface mount package, designed for switching

CMOD3003

Abstract: marking code 3c diode led ir low-leakage silicon diode SOD 87 CMOD6001
Contextual Info: Central CMOD3003 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEAKAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOD6001 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount package, designed

CMOD3003

Abstract: diode marking code
Contextual Info: CMOD3003 SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOD3003 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini surface mount package, designed for switching

CPD64

Abstract: 1N3595 1n457a equivalent
Contextual Info: PCN # 110 Notification Date: 21 April 2009 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Chip process CPD64, Low Leakage Diode discrete semiconductors, wafers, and die in chip form. Extent of Change:

sn74lvc2604

Abstract: SN74LVC26 LT6000CDCB LT1790-4096 oxygen sensor bypass LT6000 LT6001 LT6001CMS8 LT6001IMS8 LT6002
Contextual Info: LT6000/LT6001/LT6002 Single, Dual and Quad, 1.8V, 13µA Precision Rail-to-Rail Op Amps U FEATURES DESCRIPTIO • The LT 6000/LT6001/LT6002 are single, dual and quad precision rail-to-rail input and output operational amplifiers. Designed to maximize battery life in always-on applications, the devices will operate on supplies down to 1.8V

folded cascode current mirror op amp

Abstract: LT6100 oxygen sensor bypass LT6001 LT6001CMS8 LT6001IMS8 LT6002 LT6002CGN LT6002IGN LT1790-4
Contextual Info: LT6001/LT6002 Dual and Quad, 1.8V, 13µA Precision Rail-to-Rail Op Amps U FEATURES DESCRIPTIO • The LT 6001/LT6002 are dual and quad precision rail-torail input and output operational amplifiers. Designed to maximize battery life in always-on applications, the devices will operate on supplies down to 1.8V while drawing

SN74LVC26

Abstract: sn74lvc2604
Contextual Info: LT6000/LT6001/LT6002 Single, Dual and Quad, 1.8V, 13µA Precision Rail-to-Rail Op Amps FEATURES • ■ ■ ■ ■ U ■ DESCRIPTIO Ideal for Battery-Powered Applications – Low Voltage: 1.8V to 16V Operation – Low Current: 16µA/Amplifier Max – Small Packages: DFN, MSOP, SSOP

3SMC30A

Abstract: CMPZ4614 P6SMB56CA CMSD4448 sod-80 stabistor 882L CMOZ20V STB-400 3smc60ca CMZ5945B
Contextual Info: Diodes Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless Package Bottom View

top marking 3c sot23

Abstract: smd code marking sot23 sot-23 pinout diode smd marking code 631 diode SOD-323 Dual Diodes In SOT Package smd transistor marking PA smd diode marking sot-23 sot-23 marking PA marking CODE R SMD DIODE
Contextual Info: PRODUCT announcement Low Leakage Diodes in SOT-23, SOD-323, SOD-523 and SOT-563 packages SOT-23 SOD-323 SOD-523 SOT-563 features • Low Leakage: 1.0nA max. • VRRM: 200 Volts • Available in four space saving SMD packages Sample devices are available description

Contextual Info: PROCESS CPD66X Low Leakage Diode Low Leakage Diode Chip PROCESS DETAILS Die Size 17.5 x 17.5 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 7.9 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER