SOT23-6 MARKING CODE 27 Search Results

smd code marking ft sot23

Abstract: marking code my SMD Transistor npn marking code SG transistors SMD MARKING CODE sg smd code marking sot23 nxp MARKING SG marking code NA sot23 MARKING CODE SMD IC MARKING sg SOT23 MARKING SOT23 .DG
Contextual Info: 2PD602AQL; 2PD602ARL; 2PD602ASL 50 V, 500 mA NPN general-purpose transistors Rev. 01 — 27 October 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.

diode J2 marking code

Abstract: marking code 4e HSMS-2700 HSMS-2702 HSMS-270B 270B2
Contextual Info: High Performance Schottky Diode for Transient Suppression Technical Data HSMS-2700/-2702 -270B/-270C Features • Ultra-low Series Resistance for Higher Current Handling Package Lead Code Identification Top View • Picosecond Switching SINGLE 3 • Low Capacitance

marking J2 sot-23

Abstract: pn junction diode ideality factor Diode SOT-23 Marking code B.V diode symbol A1 diode J2 marking code diode marking code E1. N diode marking code 4e on semiconductor marking code sot part marking ab sc-70
Contextual Info: HSMS-2700, 2702, 270B, 270C High Performance Schottky Diode for Transient Suppression Data Sheet Description Features The HSMS-2700 series of Schottky diodes, commonly referred to as clipping /clamping diodes, are optimal for circuit and waveshape preservation applications

Contextual Info: REV. 1.2 FS8822-DS-12_EN Datasheet FS8822 Voltage Detectors with Built-in Delay Circuit SEP 2006 FS8822 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742

Contextual Info: PPJA3416 20V N-Channel Enhancement Mode MOSFET Voltage 20 V SOT-23 5.8A Current Unit: inch mm Features  RDS(ON) , VGS@4.5V, ID@5.8A<27mΩ  RDS(ON) , VGS@2.5V, ID@3.2A<40mΩ  RDS(ON) , VGS@1.8V, ID@1.6A<80mΩ  Advanced Trench Process Technology

Contextual Info: REV. 1.1 FS8821-DS-11_EN Datasheet FS8821 Ultra-Low Quiescent Current Voltage Detector SEP. 2006 FS8821 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742

ST MARKING STYLE

Abstract: D R MARKING
Contextual Info: A CALIFORNIA MICRO DEVICES PAC 27A01 P/ACTIVE PRECISION VOLTAGE DIVIDER NETWORK Features • Matched resistor pair • Tight parametric control • Long term stability • SOT-23 package for space critical applications A p p licatio n s • Matched resistor pair

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

picosecond

Abstract: HSMS-2700 HSMS-2702 HSMS-270B
Contextual Info: High Performance Schottky Diode for Transient Suppression Technical Data HSMS-2700/-2702 -270B/-270C Features • Ultra-low Series Resistance for Higher Current Handling Package Lead Code Identification Top View • Picosecond Switching SINGLE 3 • Low Capacitance

BC807

Abstract: PDTB113EK PDTB113ES PDTB113ET PDTD113EK PDTD113ES PDTD113ET SC-43A SC-59A PDTB113E
Contextual Info: PDTB113E series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ Rev. 01 — 27 April 2005 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors RET family. Table 1: Product overview

PDTB123Y

Abstract: marking 43A sot23 marking code 43a marking code R2 sot23 PDTB123YK PDTB123YS PDTB123YT PDTD123YK PDTD123YS PDTD123YT
Contextual Info: PDTB123Y series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 27 April 2005 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors RET family. Table 1: Product overview

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

BC807

Abstract: PDTB113Z PDTB113ZK PDTB113ZS PDTB113ZT PDTD113ZK PDTD113ZS PDTD113ZT SC-43A SC-59A
Contextual Info: PDTB113Z series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 27 April 2005 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors RET family. Table 1: Product overview

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: PESD5V0U2BT Ultra low capacitance bidirectional double ESD protection diode Rev. 01 — 27 March 2007 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional double ElectroStatic Discharge ESD protection diode in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed

Contextual Info: REV. 2.1 FS8853-DS-21_EN Datasheet FS8853 300 mA LDO Linear Regulator SEP 2006 FS8853 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874

Marking X1 SOT23-6

Abstract: SOT23 package s1 SOT23-6 MARKING x2 marking code T6 sot23
Contextual Info: PI6C3421-1 27MHz Spread Spectrum Clock Synthesizer Product Features Description • Two High Precision outputs: – 27.000 MHz SSC clock output – 27.000 MHz clock output The PI6C3421-1 is spread spectrum clock synthesizer targeted for video and graphics applications. The primary purpose of the spread

MARKING CODE G7 NPN SOT23

Abstract: MARKING G7 NPN SOT23 marking 41 sot23 nxp
Contextual Info: PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.

PDTA115TT

Abstract: PDTC115TT 13505
Contextual Info: PDTC115TT NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description NPN resistor-equipped transistor. PNP complement: PDTA115TT. 1.2 Features • Built-in bias resistor

transistor 1201 1203 1205

Abstract: MMBD1201 MMBD1203 MMBD1204A MMBD1205A wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking
Contextual Info: CONNECTION DIAGRAMS 3 3 1201 3 1203 24 3 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 2 1 1205 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

marking P2 sot-23

Abstract: marking wa sot-23
Contextual Info: CONNECTION DIAGRAMS 3 3 3 1201 3 1203 24 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204 27 MMBD1203 26 MMBD1205 28 1 1 2 3 3 1204 1 1205 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: Whnl LETT WLUMHEW PA CK A RD High Performance Schottky Diode for Transient Suppression Technical Data HSMS-2700/-2702 -270B/-270C Features • Ultra-low Series Resistance for Higher Current Handling • Picosecond Switching • Low Capacitance Description

PMBT6428

Abstract: PMBT6429 Philips MARKING CODE 1k
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBT6428; PMBT6429 NPN general purpose transistors Product specification Supersedes data of 1999 Apr 27 2004 Jan 22 Philips Semiconductors Product specification NPN general purpose transistors PMBT6428; PMBT6429 FEATURES