SOT23-6 MARKING CODE 13 Search Results

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

TRANSISTOR SMD MARKING CODE LF

Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23 bsr14 nxp transistors Standard Marking TRANSISTOR SMD letter CODE PACKAGE SOT23 smd marking NXP date code marking BSR14 SOT23 semiconductors replacement guide LF marking code smd transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it

BSS84Q-7-F

Abstract: BSS84 Equivalent K84 SOT23 BSS84Q BSS84Q-13-F BSS84
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

DS30149

Abstract: BSS84 BSS84 Equivalent BSS84Q-7-F BSS84 MARKING CODE
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it

p-channel SOT-23 K84

Abstract: transistor k84 k84 transistor sot-23 BSS84 marking code SOT-23
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits • • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

BAS70

Abstract: sot363 wave soldering
Contextual Info: BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes Rev. 09 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview

Schottky Diode

Abstract: BAS70_1PS7XSB70 sot363 wave soldering 1PS76SB70 1PS79SB70 BAS70 BAS70-04 BAS70-04W BAS70-05 BAS70H
Contextual Info: BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes Rev. 09 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview

TRANSISTOR SMD MARKING CODE T7

Abstract: nxp catalog NXP SMD GENERAL CATALOG
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR15; BSR16 PNP switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet PNP switching transistors BSR15; BSR16 FEATURES PINNING • High current max. 600 mA

smd schottky diode s6

Abstract: smd schottky diode marking s4 smd schottky diode marking s6 smd schottky diode s4 nxp Tape and Reel Information 1PS75SB45 mg* sot23-4 1PS70SB40 1PS70SB44 1PS79SB40
Contextual Info: BAS40 series; 1PSxxSB4x series General-purpose Schottky diodes Rev. 08 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview

Contextual Info: PMEGxx05ET series 0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package Rev. 02 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an

nxp Tape and Reel Information

Contextual Info: BAS40 series; 1PSxxSB4x series General-purpose Schottky diodes Rev. 08 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview

smd transistor 2xX

Abstract: smd TRANSISTOR sot-23 a2 marking r25 sot23 KTY 10-6 transistor Kty 10.6 SOT R25 smd sot-23 code marking 106 KT 100 tube KTY 19M SMD transistor 2x sot 23
Contextual Info: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F

KTY 110

Abstract: KTY 19M KTY 10-6 KTY 11-6 smd marking 6z KT 209 kty 1000 KTY 88 marking r25 sot23 KTY 10-7
Contextual Info: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F

TSM2301CX

Abstract: sot-23 MARKING CODE GS 5 MOSFET P-channel SOT-23 dd 127 dd 127 d marking 8A sot-23 sot-23 P-Channel MOSFET sot-23 MARKING CODE GS MOSFET P channel SOT-23 TSM2301CX SOT-23 5 pins TSM2301
Contextual Info: TSM2301 -20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = -20V RDS on , Vgs @ -4.5V, Ids @ -2.8A =130mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A =190mΩ Features  Advanced trench process technology  Excellent thermal and electrical capabilities

Contextual Info: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2d SMD PNP TRANSISTOR

Abstract: TRANSISTOR SMD MARKING CODE 2d SMD TRANSISTOR MARKING 2D TRANSISTOR SMD CODE PACKAGE SOT23 501 TRANSISTOR SMD MARKING CODE 41 transistor SMD MARKING CODE L 33 2d SMD npn TRANSISTOR smd TRANSISTOR 2D SOT23 NPN TRANSISTOR SMD MARKING CODE 2d TRANSISTOR SMD MARKING CODE SP
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA92 PNP high-voltage transistor Product specification Supersedes data of 1998 Jul 21 1999 Apr 13 Philips Semiconductors Product specification PNP high-voltage transistor PMBTA92 FEATURES PINNING

A08 SOT23

Contextual Info: DISCONTINUED 01/13/2010 DLP03LC LOW CAPACITANCE UNIDIRECTIONAL TVS Features Mechanical Data • • • • • • • • • 350 Watts Peak Pulse Power tp = 8x20 s Transient Protection for data, signal, and VCC bus to IEC610004-2 level 4 (ESD) Low Capacitance, typ. = 4pF

Contextual Info: PPJA3411 20V P-Channel Enhancement Mode MOSFET Voltage -20 V SOT-23 -3.1A Current Unit: inch mm Features  RDS(ON) , VGS@-4.5V, ID@-3.1A<100mΩ  RDS(ON) , VGS@-2.5V, ID@-2.0A<135mΩ  RDS(ON) , VGS@-1.8V, ID@-1.1A<190mΩ  Advanced Trench Process Technology

marking 4p sot23

Abstract: smd marking 271 Sot smd transistor marking n5
Contextual Info: Infineon tech n o Io g i e s Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 1 6-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-X KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient