SOT23-6 CODE 57 Search Results

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance

TSM2306

Abstract: TSM2306CX IDA57 n-channel mosfet transistor n-channel mosfet SOT-23
Contextual Info: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

Contextual Info: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS = 10V 3.5 94 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

DS3920

Abstract: XG-PON 10G-EPON MAX4007 Photodiode apd current mirror XGPON ONU
Contextual Info: 19-5797; Rev 1; 8/11 DS3920 Fast Current Mirror General Description The DS3920 precision current mirror is designed for avalanche photodiode APD and PIN photodiode biasing and monitoring applications. The device offers a current clamp to limit current through the APD and a current mirror output that produces a signal proportional (5:1) to the

Contextual Info: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features •         Mechanical Data   Low On-Resistance: • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57m @ VGS = 10V 112m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: 19-5797; Rev 2; 12/11 DS3920 Fast Current Mirror General Description Features The DS3920 precision current mirror is designed for avalanche photodiode APD and PIN photodiode biasing and monitoring applications. The device offers a current clamp to limit current through the APD and a current mirror output that produces a signal proportional (5:1) to the

XG-PON

Abstract: avalanche photodiode bias DS3920 current mirror XG-PON OLT 100-FA
Contextual Info: 19-5797; Rev 2; 12/11 DS3920 Fast Current Mirror General Description The DS3920 precision current mirror is designed for avalanche photodiode APD and PIN photodiode biasing and monitoring applications. The device offers a current clamp to limit current through the APD and a current mirror output that produces a signal proportional (5:1) to the

current mirror

Abstract: XG-PON XG-PON OLT XGPON ONU
Contextual Info: 19-5797; Rev 0; 3/11 DS3920 Fast Current Mirror General Description The DS3920 precision current mirror is designed for avalanche photodiode APD and PIN photodiode biasing and monitoring applications. The device offers a current clamp to limit current through the APD and a current mirror output that produces a signal proportional (5:1) to the

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE DMN3110S DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features •         Mechanical Data   Low On-Resistance: • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance

DMN3112S

Abstract: marking ANs J-STD-020D
Contextual Info: DMN3112S N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V

Contextual Info: PPJA3415 20V P-Channel Enhancement Mode MOSFET Voltage -20 V -4.0A Current SOT-23 Unit : inch mm Features  RDS(ON) , VGS@-4.5V, ID@-4.0A<57mΩ  RDS(ON) , VGS@-2.5V, ID@-2.8A<70mΩ  RDS(ON) , VGS@-1.8V, ID@-2.1A<95mΩ  Advanced Trench Process Technology

3K14

Abstract: N-CHANNEL MOSFET 30V 2A SOT-23 2A MARKING SOT23
Contextual Info: CYStech Electronics Corp. Spec. No. : C427N3 Issued Date : 2008.05.16 Revised Date : Page No. : 1/7 30V N-CHANNEL Enhancement Mode MOSFET MTN3K14N3 Features • VDS=30V RDS ON =39mΩ@VGS=10V, ID=2A RDS(ON)=57mΩ@VGS=4.5V, ID=2A • Low on-resistance • High speed : ton=24ns(typ.), toff=19ns(typ.)

marking code SS SOT23

Abstract: marking N03
Contextual Info: PJS50N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,ID@3.1A< 57 mΩ • RDS(ON), VGS@4.5V,ID@2.8A< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance

Contextual Info: PJS50N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,ID@3.1A< 57 mΩ • RDS(ON), VGS@4.5V,ID@2.8A< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance

Contextual Info: PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,ID@3.1A< 57 mΩ • RDS(ON), VGS@4.5V,ID@2.8A< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance

Contextual Info: PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,ID@3.1A< 57 mΩ • RDS(ON), VGS@4.5V,ID@2.8A< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance

Contextual Info: PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,ID@3.1A< 57 mΩ • RDS(ON), VGS@4.5V,ID@2.8A< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W