PJA94N03 Search Results
PJA94N03 Datasheets Context Search
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Contextual Info: PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,ID@3.1A< 57 mΩ • RDS(ON), VGS@4.5V,ID@2.8A< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance |
Original |
PJA94N03 2002/95/EC IEC61249 OT-23 MIL-STD-750 0084grams 2011-REV RB500V-40 PJA94N03 | |
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Contextual Info: PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,ID@3.1A< 57 mΩ • RDS(ON), VGS@4.5V,ID@2.8A< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance |
Original |
PJA94N03 2002/95/EC IEC61249 OT-23 MIL-STD-750 0084grams 2011-REV RB500V-40 | |
|
Contextual Info: PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,ID@3.1A< 57 mΩ • RDS(ON), VGS@4.5V,ID@2.8A< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance |
Original |
PJA94N03 2002/95/EC IEC61249 OT-23 MIL-STD-750 0084grams 2011-REV RB500V-40 PJA94N03 |