SOT23-6 494 Search Results

complementary npn-pnp

Abstract: dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748
Contextual Info: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES

PNP POWER TRANSISTOR SOT23

Abstract: FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6
Contextual Info: ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZS20

Abstract: ZS20 SOT23 MARKING T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC
Contextual Info: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6

T1 SOT23-6

Abstract: T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC marking e1 diode
Contextual Info: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6

ZHCS2000

Abstract: Schottky Diode 40V 2A ZHCS2000TA ZHCS2000TC DSA003728
Contextual Info: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

Schottky Diode 40V 2A

Abstract: marking ma sot23-6 ZHCS2000 320 sot236 ZLLS1000TA ZLLS1000TC ZLLS2000 marking L10
Contextual Info: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage

DIODES 11W

Contextual Info: A Product Line of Diodes Incorporated ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve

ZHCS2000

Abstract: ZLLS2000 ZLLS2000TA ZLLS2000TC DIODE SCHOTTKY 40V 500MA 2222 diode
Contextual Info: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage

TS16949

Abstract: ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6
Contextual Info: ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP

T2 MARKING SOT23-6

Abstract: marking ma sot23-6 PNP POWER TRANSISTOR SOT23
Contextual Info: ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Pac k aged in t he SOT2 3 -6 out line t his new 5 t h generation low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in

d619

Abstract: sot23-6 package marking d619 transistor d619 data ZUMT619 ZXTD09N50DE6 ZXTD09N50DE6TA ZXTD09N50DE6TC
Contextual Info: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.

ZXGD3001E6

Abstract: ZXGD3001 ZXGD3001E6TA design ideas igbt display plasma TS16949 ZETEX GATE DRIVER
Contextual Info: ZXGD3001E6 9A peak Gate driver in SOT23-6 General description The ZXGD3001E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V. With typical propagation

ZXGD3003E6

Abstract: ZXGD3003 ZXGD3003E6TA ZETEX GATE DRIVER design ideas igbt display plasma sot23 6 device Marking TS16949
Contextual Info: ZXGD3003E6 5A peak gate driver in SOT23-6 General description The ZXGD3003E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation

LXHL-PW01

Abstract: LXHL-PW01 led NPI31W220MTRF 1w led driver LED Driver 1W GRM43SR60J107ME20 LED sot23-6 LXHL-PW01 Lumileds 1W zxtn25012efh DO3316P-223
Contextual Info: ZXSC400EV3 ZXSC400EV3 USER GUIDE DESCRIPTION The ZXSC400 is voltage mode boost converter in SOT23-6 package. Its low feedback voltage allows the current in a chain of LEDs to be set and accurately monitored with a single resistor with minimal losses. The ZXSC400EV3 is configured as a boost converter

Circuit diagram of 1W LED drive

Abstract: osram golden dragon circuit diagram ZXSC400 1w led driver LWW5SG DO3316P-223 FMMT617 GRM43SR60J107ME20L UZHCS1000 ZHCS1000
Contextual Info: ZXSC400EV4 ZXSC400EV4 USER GUIDE DESCRIPTION The ZXSC400 is voltage mode boost converter in SOT23-6 package. Its low feedback voltage allows the current in a chain of LEDs to be set and accurately monitored with a single resistor with minimal losses. The ZXSC400EV4 is configured as a boost converter

C410

Abstract: C420 FMMT617 ZHCS1000 ZX3CDBS1M832 ZXSC410 ZXSC410E6TA ZXSC420 ZXSC420E6TA
Contextual Info: ZXSC410 ZXSC420 VOLTAGE MODE BOOST CONVERTER DESCRIPTION The ZXSC410 is voltage mode boost converter in SOT23-6 package. Its excellent load and line regulation means that for the full supply range from lithium Ion cells, the output voltage will typically change by less than 1%. Using high efficiency

Contextual Info: ZXSC400EV7 USER GUIDE DESCRIPTION The ZXSC400 is a voltage mode boost converter in a SOT23-6 package. The low feedback voltage VFB input allows the current in a chain of LEDs to be set accurately. The ZXSC400EV7 is designed to drive one or two 3W LEDs at a constant

1w white led

Contextual Info: ZXSC400EV3 ZXSC400EV3 USER GUIDE DESCRIPTION The ZXSC400 is voltage mode boost converter in SOT23-6 package. Its low feedback voltage allows the current in a chain of LEDs to be set and accurately monitored with a single resistor with minimal losses. The ZXSC400EV3 is configured as a boost converter

complementary npn-pnp power transistors

Abstract: ZETEX medium power complementary transistors TS16949 ZXTC2061E6 ZXTC2061E6TA NPN SOT23-6 RCE SOT23-6
Contextual Info: ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 35 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.

C410

Abstract: C420 FMMT617 ZHCS1000 ZX3CDBS1M832 ZXSC410 ZXSC410E6TA ZXSC420 ZXSC420E6TA TFT BIAS
Contextual Info: ZXSC410 ZXSC420 VOLTAGE MODE BOOST CONVERTER DESCRIPTION The ZXSC410 is voltage mode boost converter in SOT23-6 package. Its excellent load and line regulation means that for the full supply range from lithium Ion cells, the output voltage will typically change by less than 1%. Using high efficiency

NY TRANSISTOR MAKING LIST

Abstract: ZXSC410 C410 C420 FMMT617 ZHCS1000 ZX3CDBS1M832 ZXSC410E6TA ZXSC420 ZXSC420E6TA
Contextual Info: ZXSC410 ZXSC420 VOLTAGE MODE BOOST CONVERTER DESCRIPTION The ZXSC410 is voltage mode boost converter in SOT23-6 package. Its excellent load and line regulation means that for the full supply range from lithium Ion cells, the output voltage will typically change by less than 1%. Using high efficiency

25W led driver circuit diagram

Abstract: capacitor 100nf 100v zener diode 4.7V philips zener diode ZXSC400 BZX84C47 schematic diagram PWM 24V ZXSC400EV2 tv schematic diagram PHILIPS 100uf electrolytic capacitor at 25v
Contextual Info: ZXSC400EV2 ZXSC400EV2 USER GUIDE DESCRIPTION The ZXSC400 is voltage mode boost converter in SOT23-6 package. Its low feedback voltage allows the current in a chain of LEDs to be set and accurately monitored with a single resistor with minimal losses. The ZXSC400EV2 is configured for 25W LED Driver

grm 200

Abstract: ZXSC400E6TA MURATA GRM ZXSC400 d01608c-223 ZXSC400 8v NSCW215 part marking leb sot23 smt a1 transistor zener 6v3
Contextual Info: ZXSC400 LED DRIVER BOOST CONVERTER DESCRIPTION The ZXSC400 is voltage mode boost converter in SOT23-6 package. Its low feedback voltage allows the current in a chain of LEDs to be set and accurately monitored with a single resistor with minimal losses. It’s excellent load and line