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    SOT23 MARKING P Search Results

    SOT23 MARKING P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG80C186-10/BZA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy
    54121/BCA
    Rochester Electronics LLC 54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) PDF Buy
    54F191/QEA
    Rochester Electronics LLC 54F191/QEA - Dual marked (5962-9058201EA) PDF Buy

    SOT23 MARKING P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ZXM41N0F

    Contextual Info: ZXM41N0F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage V DS 100 V Drain-gate voltage V DGR


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    ZXM41N0F ZXM41N0F PDF

    330 marking diode

    Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
    Contextual Info: FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 – JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL – D63 10 5 3 ABSOLUTE MAXIMUM RATINGS. 20 40 60


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    FLLD258 FLLD261 FLLD263 400mA -200mA 330 marking diode FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63 PDF

    330 marking diode

    Abstract: marking SOT23 V 4 diode FLLD258 FLLD261 FLLD263 MARKING P8A DSA003670
    Contextual Info: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 – SEPTEMBER 1995 ✪ DIODE PIN CONNECTION 2 1 3 3 2 1 SOT23 PART MARKING DETAIL – P8A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current


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    FLLD261 400mA -200mA 330 marking diode marking SOT23 V 4 diode FLLD258 FLLD261 FLLD263 MARKING P8A DSA003670 PDF

    SOT-143 MARKING 550

    Abstract: S852T S868 T0-50 TEMIC S868T BFP183T
    Contextual Info: Temic Semiconductors TOSO 4 Marking T050 (3) Part Number SOT23 Ibias(niA) Vd(V) SOT143 Gp(dB) (50 Q) BiPMICs (Bipolar Monolithic Integrated Circuit) S858TA1 S858TA3 S868T S860T S872T Marking Part Number 858 TA3 868 860 * VcEO V 30 30 45 3 85 5 3.6 5 1.8


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    OT143 S858TA1 S858TA3 S868T S860T S872T OT143 BFP67 BFP92A BFP93A SOT-143 MARKING 550 S852T S868 T0-50 TEMIC S868T BFP183T PDF

    FMMTA42

    Abstract: FMMTA92 TS16949 semiconductors 3E
    Contextual Info: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage


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    FMMTA42 FMMTA42 FMMTA92 D-81541 FMMTA92 TS16949 semiconductors 3E PDF

    BAW156

    Abstract: BCW66
    Contextual Info: BAW156. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Common anode configuration BAW156 ! , ,   Type BAW156 Package SOT23 Configuration common anode Marking JZs Maximum Ratings at TA = 25°C, unless otherwise specified


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    BAW156. BAW156 BAW156 BCW66 PDF

    smd transistor marking f10

    Abstract: transistor smd marking BA sot-23 sot-23 Marking N2 SMD TRANSISTOR MARKING N2 CMBT200 CMBT200A MARKING N2 transistor smd marking BA
    Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT200 CMBT200A SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 Designed for General Purpose Amplifier Applications.


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    ISO/TS16949 CMBT200 CMBT200A 25deg C-120 smd transistor marking f10 transistor smd marking BA sot-23 sot-23 Marking N2 SMD TRANSISTOR MARKING N2 CMBT200 CMBT200A MARKING N2 transistor smd marking BA PDF

    transistor smd marking NE

    Abstract: transistor smd marking BA RE SOT23 NE CMBT847 transistor smd marking PE
    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    CMBT847 100uA, C-120 transistor smd marking NE transistor smd marking BA RE SOT23 NE CMBT847 transistor smd marking PE PDF

    transistor smd marking PE

    Abstract: transistor smd marking BA transistor smd marking BA sot-23 CMBT857 pe sot23
    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    CMBT857 100uA, C-120 transistor smd marking PE transistor smd marking BA transistor smd marking BA sot-23 CMBT857 pe sot23 PDF

    transistor smd marking NE

    Abstract: sot-23 marking NE CMBT847 MARKING NE SOT23 MA COM marking
    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    CMBT847 100uA, C-120 transistor smd marking NE sot-23 marking NE CMBT847 MARKING NE SOT23 MA COM marking PDF

    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    CMBT857 100uA, C-120 PDF

    CMBA847

    Abstract: transistor smd marking BA sot-23
    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    CMBA847 100uA, C-120 CMBA847 transistor smd marking BA sot-23 PDF

    s5C SOT23

    Abstract: mar 820
    Contextual Info: SMBD7000/MMBD7000. Silicon Switching Diode Array • For high-speed switching applications SMBD7000/MMBD7000 3 D 1 D 2 1 2 Type SMBD7000/MMBD7000 Package SOT23 Configuration series Marking s5C Maximum Ratings at TA = 25°C, unless otherwise specified Parameter


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    SMBD7000/MMBD7000. SMBD7000/MMBD7000 EHB00137 Mar-10-2004 s5C SOT23 mar 820 PDF

    BAV199

    Abstract: BAV199F BAV 199 SOT23
    Contextual Info: BAV199. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Series pair configuration BAV199 BAV199F 3 D 1 D 2 1 2 Type BAV199 BAV199F* Package SOT23 TSFP-3 Configuration series series Marking JYs JYs * Preliminary


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    BAV199. BAV199 BAV199F BAV199F* BAV199, BAV199F, EHB00086 Mar-10-2004 BAV199 BAV199F BAV 199 SOT23 PDF

    CMBA857

    Abstract: MARKING SMD pnp TRANSISTOR ec MARKING PA TR SOT-23
    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBA857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    CMBA857 100uA, C-120 CMBA857 MARKING SMD pnp TRANSISTOR ec MARKING PA TR SOT-23 PDF

    transistor smd marking NE

    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    CMBT847 100uA, C-120 transistor smd marking NE PDF

    SOT23-5 marking 016

    Abstract: Marking 305 SOT23-5 MC78LC00 MC78LC00NTR MC78LC30HT1 MC78LC30NTR MJD32C LAL sot23-5 MARKING V32 SOT23
    Contextual Info: MC78LC00 Series Micropower Voltage Regulator Features MARKING DIAGRAMS AND PIN CONNECTIONS THIN SOT23−5 NTR SUFFIX CASE 483 GND 1 Vin 2 Vout 3 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V


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    MC78LC00 OT23-5 OT-89, OT-23, OT-89 MC78LC00/D SOT23-5 marking 016 Marking 305 SOT23-5 MC78LC00NTR MC78LC30HT1 MC78LC30NTR MJD32C LAL sot23-5 MARKING V32 SOT23 PDF

    818B

    Abstract: PNP POWER TRANSISTOR SOT23-6L high gain PNP POWER TRANSISTOR SOT23 STT818B PNP POWER TRANSISTOR "SOT23-6L" MARKING 818B SOT23 818B
    Contextual Info: STT818B HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR • ■ ■ ■ Type Marking STT818B 818B VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN > 100 hFE 3 A CONTINUOUS COLLECTOR CURRENT (IC) SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL


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    STT818B OT23-6L OT23-6L 818B PNP POWER TRANSISTOR SOT23-6L high gain PNP POWER TRANSISTOR SOT23 STT818B PNP POWER TRANSISTOR "SOT23-6L" MARKING 818B SOT23 818B PDF

    Comchip Technology

    Abstract: CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16
    Contextual Info: Diode Network / ESD Suppressor CDA3S06-G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designedto provide four channels for active termination of high-speed data signals to eliminate signal undershootand


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    CDA3S06-G OT23-6) MDS0903002A Comchip Technology CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16 PDF

    NB smd transistor

    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    CMBA847 100uA, C-120 NB smd transistor PDF

    electronic schematic

    Contextual Info: Diode Network / ESD Suppressor COMCHIP www.comchiptech.com CDA3S06L Voltage: 8 Volts Current: 50 mA Package SOT23-6 Feature Marking “ CDA3 “ This diode network is designed to provide four channels for active termination of high-speed data signals to eliminate signal undershoot and


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    CDA3S06L OT23-6) MDS0903002A electronic schematic PDF

    818B

    Abstract: ON TSOP6 MARKING 6L PNP POWER TRANSISTOR SOT23-6L STT818B
    Contextual Info: STT818B HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR • ■ ■ ■ Type Marking STT818B 818B VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN > 100 hFE 3 A CONTINUOUS COLLECTOR CURRENT (IC) SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL


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    STT818B OT23-6L OT23-6L 818B ON TSOP6 MARKING 6L PNP POWER TRANSISTOR SOT23-6L STT818B PDF

    BAW56 application note

    Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
    Contextual Info: BAW56 Silicon Switching Diode Array 3  For high-speed switching applications  Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR


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    BAW56 VPS05161 EHA07006 EHB00091 EHB00092 Jul-31-2001 EHB00093 BAW56 application note A1s sot23 BAW56 V6010 ta1504 A2 SOT23 PDF

    BAV170

    Contextual Info: BAV170 3 Silicon Low Leakage Diode Array  Low-leakage applications  Medium speed switching times 2  Common cathode 1 VPS05161 3 1 2 EHA07004 Type BAV170 Marking JXs Pin Configuration 1 = A1 2 = A2 3 = C1/2 Package SOT23 Maximum Ratings Parameter Symbol


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    BAV170 VPS05161 EHA07004 EHB00081 Aug-20-2001 EHB00082 BAV170 PDF