SOT23 MARKING CODE AB Search Results

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

VM MARKING CODE SOT23-5

Abstract: NET50 NET153
Contextual Info: sig n TSM105 • ■ ■ ■ ORDER CODE Part Number Package Temperature Range TSM105CLT TSM105CD Marking L D • 0 to 85°C 0 to 85°C • M105 TSM105 L = Tiny Package SOT23-5 - only available in Tape & Reel (LT) D = Small Outline Package (SO) - also available in Tape & Reel (DT)

SOT23-5 marking 016

Abstract: A114 A115 MC74VHC1GT02
Contextual Info: MC74VHC1GT02 Single 2−Input NOR Gate/ CMOS Logic Level Shifter LSTTL−Compatible Inputs MARKING DIAGRAMS 5 5 1 SC−88A/SC70−5/SOT−353 DF SUFFIX CASE 419A VJ M G G 1 5 5 VJ M G G 1 TSOP−5/SOT23−5/SC59−5 DT SUFFIX CASE 483 1 VJ = Device Code M

Contextual Info: MC74VHC1GT02 Single 2−Input NOR Gate/ CMOS Logic Level Shifter LSTTL−Compatible Inputs MARKING DIAGRAMS 5 5 1 SC−88A/SC70−5/SOT−353 DF SUFFIX CASE 419A VJ M G G 1 5 5 VJ M G G 1 TSOP−5/SOT23−5/SC59−5 DT SUFFIX CASE 483 1 VJ = Device Code M

J201 Replacement

Abstract: j201 marking code vishay SILICONIX sot-23 vishay siliconix code marking to-92 siliconix j201 Marking 02 SOT23 MARKING PA SOT-23 LS SOT23 sot-23 MARKING 3l sot23 DEVICE marking AV
Contextual Info: J/SST201 SERIES HIGH GAIN N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES LOW CUTOFF VOLTAGE VGS off ≤ 1.5V HIGH GAIN AV = 80 V/V 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) J SERIES Maximum Temperatures

marking NC sot23

Abstract: smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23 BF579
Contextual Info: HIGH FREQUENCY SMD TRANSISTORS DESCRIPTION •Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications

Marking code 016w

Abstract: marking 016w 016W
Contextual Info: Advanced Power Electronics Corp. APE8865 300mA LOW DROPOUT LINEAR REGULATOR FEATURES DESCRIPTIOON Low Dropout Voltage of 250mV at 300mA Guaranteed 300mA Output Current Very Low Quiescent Current at about 30uA ±2% Output Voltage Accuracy for 1.2V~3.3V Needs Only 1µF Capacitor for Stability

BAR14-1

Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1

02LRH

Abstract: BAR64-03W bar6403w e6327
Contextual Info: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)

ESDOP2RF-02LRH E6327

Contextual Info: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)

marking code L7S

Abstract: marking L8s marking code 61s BAR14-1
Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1

marking code TS

Abstract: BAR64-05
Contextual Info: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)

marking code L7S

Abstract: BAR14-1 BAR15-1 BAR16-1 BAR61 BCW66 BFP181 marking L8s
Contextual Info: BAR1. / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 ! BAR16-1 ! BAR61 " ! ! ,  ,  ,  ,  ,  Type BAR14-1 BAR15-1

Contextual Info: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)

BAR16-1

Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package • Qualified according AEC Q101 BAR14-1 BAR15-1

Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package BAR14-1 BAR15-1 ! BAR16-1 ! BAR61 " ! ! ,  , 

Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package • Qualified according AEC Q101 BAR14-1 BAR15-1

ym 238

Abstract: marking code L7S l8s 15 BAR14-1 BAR15-1 BAR16-1 BAR61 0154B
Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAR14-1 BAR15-1

marking code SS SOT23

Abstract: APE8865 SC-70-4LSC-70-5LSOT-23 Y5 sot23 NR SOT-23 sot23 marking y5 APE8865N APE8865NL SC-70-5L SOT marking CODE 73 low noise
Contextual Info: Advanced Power Electronics Corp. APE8865 300mA LOW DROPOUT LINEAR REGULATOR FEATURES DESCRIPTIOON The APE8865 series are low dropout, positive linear regulators with very low quiescent current. The APE8865 can supply 300mA output current with a low dropout voltage at about 250mV.

Contextual Info: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)

Contextual Info: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)

WC SOT23-3

Abstract: 6C t marking code sot 23 SOT-23 6C 6B SOT23-3 FAIRCHILD SOT-23 MARK 30 sot23 mark code e2
Contextual Info: BC817-25 / BC817-40 BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*

Contextual Info: Advanced Power Electronics Corp. APE8800-3 300mA Low Drop-out Linear Regulator Features Description Low Dropout Voltage of 250mV at 300mA Guaranteed 300mA Output Current Very Low Quiescent Current of about 30µA Output Voltage Accuracy of ±2% for 1.5V~3.6V

BAT18

Abstract: ASS infineon
Contextual Info: BAT18. Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking