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    SOT23 MARKING 8FB Search Results

    SOT23 MARKING 8FB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BAV99
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.215 A, SOT23 Datasheet
    TBAV70
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    TBAS16
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    TBAW56
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    BAV70
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.215 A, SOT23 Datasheet

    SOT23 MARKING 8FB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    8FC SOT23

    Abstract: TRANSISTOR 8FB sot23 marking 8fc marking 8FC sot23 marking 8fB Transistor 8fc transistor MARKING my BC81740MTF 8FC+SOT23
    Contextual Info: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC807/ BC808 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector


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    BC817/BC818 BC817/BC818 BC807/ BC808 OT-23 BC817 BC818 BC817 8FC SOT23 TRANSISTOR 8FB sot23 marking 8fc marking 8FC sot23 marking 8fB Transistor 8fc transistor MARKING my BC81740MTF 8FC+SOT23 PDF

    HBC817

    Abstract: hbc8
    Contextual Info: HI-SINCERITY Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2008.01.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.


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    HE6831 HBC817 HBC817 OT-23 183oC 217oC 260oC 10sec hbc8 PDF

    8FC SOT23

    Abstract: BC81716MTF TRANSISTOR 8FB BC818 on 8gb transistor BC81740MTF BC807 BC808 BC817 BC81725MTF
    Contextual Info: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC807/ BC808 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector


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    BC817/BC818 BC807/ BC808 BC817 BC818 OT-23 BC817/BC818 8FC SOT23 BC81716MTF TRANSISTOR 8FB BC818 on 8gb transistor BC81740MTF BC807 BC808 BC817 BC81725MTF PDF

    transistor 8gb sot 23

    Contextual Info: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/ BC808 3 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector


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    BC817/BC818 BC807/ BC808 BC817 BC818 OT-23 BC817/BC818 transistor 8gb sot 23 PDF

    marking 8FC

    Contextual Info: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC817/BC818 BC807/BC808 OT-23 BC817 BC818 OT-23 marking 8FC PDF

    HBC817

    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.


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    HE6831 HBC817 HBC817 OT-23 PDF

    BC817

    Abstract: BC818
    Contextual Info: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC817/BC818 BC807/BC808 OT-23 BC817 BC818 BC817 BC818 PDF

    BC817

    Abstract: BC818 8FC SOT23
    Contextual Info: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC817/BC818 BC807/BC808 OT-23 BC817 BC818 BC817 BC818 8FC SOT23 PDF

    BC817

    Abstract: BC818 marking code fairchild marking 8FC
    Contextual Info: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC817/BC818 BC807/BC808 OT-23 BC817 BC818 BC817 BC818 marking code fairchild marking 8FC PDF

    8FC SOT23

    Abstract: marking 8FC 8fc marking code BC817 on 8gb transistor sot23 marking 8fc bc818 ic 817 marking 8fb silicon power 8GB
    Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Sutable for AF-Driver stages and low power output stages • Complement to BC807/BC808  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Collector Emitter Voltage :BC817


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    BC817/BC818 OT-23 BC807/BC808 BC817 BC818 100mA 8FC SOT23 marking 8FC 8fc marking code BC817 on 8gb transistor sot23 marking 8fc bc818 ic 817 marking 8fb silicon power 8GB PDF

    Bc817 sot-23

    Abstract: 8fc smd 8FC SOT23 KC817-25 BC817 smd KC817-40 marking 8FC marking 8fb marking AF BC817
    Contextual Info: Transistors SMD Type NPN Silicon AF Transistors KC817 BC817 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1


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    KC817 BC817) OT-23 Jun10 300mA KC817-16 KC817-25 KC817-40 Bc817 sot-23 8fc smd 8FC SOT23 KC817-25 BC817 smd KC817-40 marking 8FC marking 8fb marking AF BC817 PDF

    Contextual Info: SMD Type Product specification KC817 BC817 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1 High current gain.


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    KC817 BC817) OT-23 300mA KC817-16 KC817-25 KC817-40 PDF

    SOT23 MARKING CODE 8G

    Abstract: 8FC SOT23 marking 8fb sot23 marking 8fc
    Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRAN SISTO R SOT-23 SW ITCHING AND AM PLIFIER APPLICATIONS • Sutable for AF-Driver stages and low power output stages • Complement to BC807/BC808 A BSO LU TE MAXIMUM RATINGS Ta =25TC Characteristic Symbol Collector Emitter Voltage :BC817


    OCR Scan
    BC817/BC818 OT-23 BC807/BC808 BC817 BC818 SOT23 MARKING CODE 8G 8FC SOT23 marking 8fb sot23 marking 8fc PDF

    Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector Emitter Voltage


    OCR Scan
    BC817/BC818 OT-23 BC807/BC808 BC817 BC818 100mA 300mA 500mA, PDF