SOT23 DMB Search Results

Contextual Info: ZXMP3F30FH P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance • Fast Switching Speed 80mΩ@ VGS = -10V -4.0A • 4.5V Gate Drive Capability 140mΩ@ VGS =-4.5V ⎯ • Thermally Enhanced SOT23 package •

Contextual Info: DMBT9022 NEW PRODUCT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 A C TOP VIEW Mechanical Data · · · · · Case: SOT-23, Molded Plastic

Contextual Info: NEW PRODUCT DMBT9022 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 A C TOP VIEW B Mechanical Data • • •

Contextual Info: NEW PRODUCT DMBT9922 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain Complement to DMBT9022 SOT-23 A C TOP VIEW B

DMBT9022

Abstract: DMBT9922
Contextual Info: DMBT9922 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain Complement to DMBT9022 SOT-23 · · · Min Max A 0.37 0.51 B 1.19 1.40

23 a c

Contextual Info: DMBT9022 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 · · · Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05

DMBT9022

Contextual Info: DMBT9022 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 · · · Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05

DMBT9022

Abstract: DMBT9922
Contextual Info: DMBT9922 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain Complement to DMBT9022 SOT-23 · · · Min Max A 0.37 0.51 B 1.19 1.40

0178H

Contextual Info: DMBT9022 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 -H ; h~A TOP VIEW Mechanical Data Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202,

DMBT9022

Abstract: DMBT9922
Contextual Info: DMBT9922 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain Complement to DMBT9022 SOT-23 -H ; h~A TO P VIEW Mechanical Data_

702 sot23

Abstract: 1N4448W13F BAV99-7-05-F sot 23 70.2 MMBT3906R BZT52C6V8 DVRN6056
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1116 Contact Date: Implementation Date: Alert Category: Alert Type: September 16, 2008 December 15, 2008 Discrete Semiconductor Bond Wire Change PCN #: PCN #: 1116 TITLE COPPER BOND WIRE IMPLEMENTATION IMPACT None DESCRIPTION OF CHANGE

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

BC547 sot package sot-23

Abstract: BC547 sot23 BC557 sot-23 BC557 sot package sot-23 BC556 sot package sot-23 2sa1015 sot-23 2SC945 SOT-23 bc548 sot23 2sb772 TO92 PCR306
Contextual Info: DC Components - Cross Reference Industry Type No. DC Type 2N2955 2N2955 TO-3 2N3055 2N3055 TO-3 2SB1426 2SB1426 2SB507 2SB507 TO-220AB 2N3772 2N3772 TO-3 2SB564A 2SB564A 2N3773 2N3773 TO-3 2N3904 2N3904 TO-92 2SB772 2SB772 TO-126 2N3906 2N3906 TO-92 2SB857 2SB857 TO-220AB

XL1225 equivalent

Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
Contextual Info: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)

DMBTA56

Contextual Info: DC COMPONENTS CO., LTD. R DMBTA56 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3

DMBTA05

Contextual Info: DC COMPONENTS CO., LTD. R DMBTA05 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3

FTZ605

Abstract: ZDT6790 fzt653 ZDT1049 ZTX415 ZTX796A fzt651 ZXGD3003E6 2DD1766 zetex transistor to92
Contextual Info: DIO 1943 BiPolar brochure Final Artwork 12/4/10 14:50 Page 2 BIPOLAR CORPORATE HEADQUARTERS AND AMERICAS SALES OFFICE TRANSISTORS 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Tel: 972-385-2810 E-mail: inquiries@diodes.com EUROPE SALES OFFICE

complementary MOSFET TO252

Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Contextual Info: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and

DMBT9018

Contextual Info: DC COMPONENTS CO., LTD. DMBT9018 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in AM/FM amplifier and local oscillator of FM/VHF tuner. SOT-23 .020 0.50 .012(0.30) Pinning 1 = Base 2 = Emitter

DMBTA64

Contextual Info: DC COMPONENTS CO., LTD. R DMBTA64 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for applications requiring high current gain. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3 .108(0.65)

DMBTA14

Contextual Info: DC COMPONENTS CO., LTD. R DMBTA14 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for applications requiring high current gain. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3 .063(1.60)

DMBTA55

Contextual Info: DC COMPONENTS CO., LTD. R DMBTA55 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3

DMBTA06

Contextual Info: DC COMPONENTS CO., LTD. R DMBTA06 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3