SOT23 COMPONENT MARKING CODE 5A Search Results

Contextual Info: Leshan Radio Co.Ltd General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16WT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-16WT1G 5A Pb-Free SOT-323 3000/Tape&Reel LBC807-25WT1G 5B (Pb-Free)

Contextual Info: DT1452-02SO Features Mechanical Data • IEC 61000-4-2 ESD : Air – ±16kV, Contact – ±16kV   IEC 61000-4-4 (EFT) Additional Level, 55A (5/50ns)   IEC 61000-4-5 (Lightning): 5A (8/20µs)  2 Channels of ESD protection   Low Channel Input Capacitance of 1.2pF Typical

FMMT634Q

Contextual Info: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current

Contextual Info: Advanced Power Electronics Corp. AP2338GN-HF-3 N-channel Enhancement-mode Power MOSFET Operates with Gate Drive down to 1.8V D BV DSS Small Package, SOT-23 Outline 30V R DS ON Surface Mount Device G RoHS-compliant, halogen-free 35mΩ ID 5A S Description

Contextual Info: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data •           BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current 625mW Power dissipation

Contextual Info: Advanced Power Electronics Corp. AP2306AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.5V Gate Drive D BV DSS Lower On-resistance 30V RDS ON Surface-Mount Device G RoHS-compliant, Halogen-free 35mΩ ID 5A S Description D Advanced Power MOSFETs from APEC provide the designer with the best

Contextual Info: SMD ESD Protection Diode CPDT-5V0 RoHS Device Features SOT-23 -Common anode ESD protection. -IEC61000-4-2 8kV Contact , 15kV(air). 0.119(3.00) 0.110(2.80) -Surface mount package. 3 -High component density. 0.056(1.40) 0.047(1.20) Mechanical data 1 2 0.079(2.00)

Contextual Info: SMD ESD Protection Diode CPDT-5V0-HF RoHS Device Halogen Free Features SOT-23 -Common anode ESD protection. 0.118 3.00 0.110(2.80) -IEC61000-4-2 8kV(Contact), 15kV(air). 3 -Surface mount package. 0.055(1.40) 0.047(1.20) -High component density. 1 2 0.079(2.00)

smd code marking sot23

Abstract: smd code HF diode smd diode marking 5V0 e05 marking SMD MARKING CODE HF marking 1u sot-23 SOT23 component marking code 5a sot23 marking code KV 23 SMD MARKING SMD MARKING CODE 202
Contextual Info: SMD ESD Protection Diode SMD Diodes Specialist CPDT-5V0-HF RoHS Device Features -Halogen free. -Common anode ESD protection. -IEC61000-4-2 8kV(Contact), 15kV(air). SOT-23 -Surface mount package. 0.118(3.00) 0.110(2.80) -High component density. 3 0.055(1.40)

5A SMD MARKING SOT23

Abstract: SMD MARKING CODE 202 CPDT-5V0 smd code marking sot23 marking 002 smd diode marking 111 smd diode p0 smd diode marking sot23 smd diode marking code 500 smd code marking 3 1 sot23
Contextual Info: SMD ESD Protection Diode SMD Diodes Specialist CPDT-5V0 RoHS Device Features -Common anode ESD protection. -IEC61000-4-2 8kV(Contact), 15kV(air). SOT-23 -Surface mount package. -High component density. 0.119(3.00) 0.110(2.80) Mechanical data 3 0.056(1.40)

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode z Pb-Free Package is Available. LMBD6050LT1G Ordering Information Device Marking Shipping LMBD6050LT1G 5A 3000/Tape&Reel LMBD6050LT3G 5A 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating Reverse Voltage Forward Current

Contextual Info: SMD ESD Protection Diode CPDT-5V0 RoHS Device Features SOT-23 -Common anode ESD protection. -IEC61000-4-2 Level 4 ESD protection. 0.119 3.00 0.110(2.80) -Surface mount package. 3 -High component density. 0.056(1.40) 0.047(1.20) Mechanical data 1 2 0.079(2.00)

Contextual Info: SMD ESD Protection Diode CPDT-5V0-HF RoHS Device Halogen Free Features SOT-23 -Common anode ESD protection. -IEC61000-4-2 Level 4 ESD protection. 0.119 3.00 0.110(2.80) -Surface mount package. 3 0.056(1.40) -High component density. 0.047(1.20) 1 Mechanical data

Contextual Info: SMD ESD Protection Diode CPDT-5V0 RoHS Device Features SOT-23 -Common anode ESD protection. -IEC61000-4-2 Level 4 ESD protection. 0.119 3.00 0.110(2.80) -Surface mount package. 3 -High component density. 0.056(1.40) 0.047(1.20) Mechanical data 1 2 0.079(2.00)

ap2306agn

Abstract: A2 SOT-23 mosfet
Contextual Info: AP2306AGN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D BVDSS 30V RDS ON 35mΩ ID ▼ Surface mount package 5A S SOT-23 Description D G Advanced Power MOSFETs utilized advanced processing techniques

AP2306AGN-HF

Contextual Info: AP2306AGN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D BVDSS 30V RDS ON 35mΩ ID ▼ Surface mount package ▼ RoHS Compliant 5A S SOT-23 Description

SM05

Abstract: SM05-7 DS31828 TVS SOT-23
Contextual Info: SM05 NEW PRODUCT DUAL SURFACE MOUNT TVS Features Mechanical Data • • • • • • • • • 300 Watts Peak Pulse Power tp = 8x20 s IEC 61000-4-2 (ESD): Air – 15kV, Contact – 8kV Dual Common Anode TVS SOT-23 Package Allows Either Two Separate Unidirectional

Contextual Info: SM05 N EW PRODU CT DUAL SURFACE MOUNT TVS Features Mechanical Data • • • • • • • • • 300 Watts Peak Pulse Power tp = 8x20 s IEC 61000-4-2 (ESD): Air – 15kV, Contact – 8kV Dual Common Anode TVS SOT-23 Package Allows Either Two Separate Unidirectional

Contextual Info: AOZ8224 Four-line Bi-directional TVS Diode General Description Features The AOZ8224 is a four-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD.  ESD protection for high-speed data lines:

Contextual Info: AOZ8224 Four-line Bi-directional TVS Diode General Description Features The AOZ8224 is a four-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD.  ESD protection for high-speed data lines:

Contextual Info: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V ID TA = +25°C -4.0A -2.0A Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage

Contextual Info: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features •         Mechanical Data   Low On-Resistance: • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

SOT23 component marking code 5a

Contextual Info: D5V0L2B3SO Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 2 Channels of Bi-Directional ESD Protection Low Channel Input Capacitance Typically Used in Cellular Handsets, Portable Electronics,

Contextual Info: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS R DS(on) max -20V 42.5mΩ @ V GS = -4.5V 71mΩ @ V GS = -1.8V ID T A = +25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (R DS(ON) ) and yet maintain superior switching