SOT23 6 DEVICE MARKING Search Results

Contextual Info: UM8515 20V P-Channel Power MOSFET UM8515 SOT23-6 General Description The UM8515 is a low threshold P-channel MOSFET, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The devices use a space-saving, small-outline SOT23-6 package.

Comchip Technology

Abstract: CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16
Contextual Info: Diode Network / ESD Suppressor CDA3S06-G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designedto provide four channels for active termination of high-speed data signals to eliminate signal undershootand

PMBT2222

Contextual Info: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview

PMBT2222A

Abstract: PMBT2222 Marking Code SMD transistors PMBT2907 PMBT2907A 1P SMD CODE MARKING MARKING CODE SMD IC
Contextual Info: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview

NXP date code marking

Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
Contextual Info: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview

marking code Sk transistors

Abstract: smd code marking ft sot23 SOT23 marking sk sk sot23 marking code 10 sot23 MARKING SMD IC CODE 2PB709ARL 2PB709ASL 2PD601ARL 2PD601ASL
Contextual Info: 2PD601ARL; 2PD601ASL 50 V, 100 mA NPN general-purpose transistors Rev. 01 — 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.

Contextual Info: UM8516 20V P-Channel Power MOSFET UM8516 SOT23-6 General Description The UM8516 is a low threshold P-channel MOSFET with gate to source TVS protection, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device

d619

Abstract: sot23-6 package marking d619 transistor d619 data ZUMT619 ZXTD09N50DE6 ZXTD09N50DE6TA ZXTD09N50DE6TC
Contextual Info: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.

bzx84

Contextual Info: SO T2 3 BZX84 series Voltage regulator diodes Rev. 6 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description Low-power voltage regulator diodes in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 1 % (BZX84-A), 2 % (BZX84-B) and

TS16949

Abstract: ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6
Contextual Info: ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP

W20R

Contextual Info: Features • DEA 24Q 02 ■ 6 003 ■ ■ Applications Supports 15 KV IEC 61000-4-2 ESD equipment specification* Single device protects as many as 20 lines on exposed pins, communications ports Incorporates 40 bi-directional PN junction diodes Small form factor replaces 20 SOT23

complementary npn-pnp power transistors

Abstract: ZETEX medium power complementary transistors TS16949 ZXTC2061E6 ZXTC2061E6TA NPN SOT23-6 RCE SOT23-6
Contextual Info: ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 35 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.

MOSFET TRANSISTOR SMD MARKING CODE nh

Contextual Info: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

MOSFET TRANSISTOR SMD MARKING CODE NH

Abstract: PMV160UP smd TRANSISTOR code marking 05 sot23
Contextual Info: SO T2 3 PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

NR3015

Abstract: NR3015T1R0N 33X3 2016 LED power INDUCTOR LM3519 LM3519MK-20 LM3519MKX-20 06036D475MAT-6 06033D105MAT-25V
Contextual Info: LM3519 Connection Diagram 6-Lead SOT23 Package 20160202 Top View Pin Descriptions Pin # Name 1 En Description Device Enable Connection 2 Gnd Ground Connection 3 VOUT Output Voltage Connection 4 LED_rtn White LED Current Sensing Input Connection 5 SW Drain Connection of the Internal Power Field Effect Transistor FET Switch

Contextual Info: October 6, 2011 LMC2001 High Precision, 6MHz Rail-To-Rail Output Operational Amplifier General Description Features The LMC2001 is a new precision amplifier that offers unprecedented accuracy and stability at an affordable price and is offered in miniature SOT23-5 package. This device utilizes patented techniques to measure and continually correct

baw56 motorola

Contextual Info: 34 MOTOROLA SC -CDIODES/OPTOJ ]>F|b3b7ESS 0D3fl54b 1 6367 25 5 M O T O R OL A SC DIODES/OPTO 34C 3 8 2 ^ 6 D 7 ^ -0 3 SOT23 (continued) DEVICE NO. BAW56 SMALL-SIGNAL DUAL SWITCHING DIODES (COMMON ANODE) TOP VIEW A I I • Com m on anode dual diode specially designed for general

MMBC1321Q5

Abstract: MMBC1321Q2 MMBC1321Q3 MMBC1321Q4
Contextual Info: MOTOROLA ! SC { D I O D E S / O P T O 34 6 3 6 7 2 5 5 M O T O R O L A SC : de I b 3 b ? E s s aaa fla ?^ s DIODES/OPTO 34C 3 8 2 7 9 D T~ . ç SOT23 (continued) DEVICE NO. MMBC1321Q2 MMBC1321Q5 thru SMALL-SIGNAL NPN TRANSISTORS TOP C VIEW I I -1— 1- 1

30255

Abstract: qSOT-23
Contextual Info: M O T O R O L A SC i D I O D E S / O P T O } 6 3 6 7 2 5 5 M O T O R O L A SC 34 DF|b3b72SS DIODES/OPTO 34C 003Ô2SS q 30255 SOT23 (continued) BCW66F,G,H DEVICE NO. SMALL-SIGNAL NPN TRANSISTOR TOP VIEW C I I • *— ' - t =i B Device D e s ig n e d fo r lo w -freq u en cy d river s ta g e an d switching

Contextual Info: 34 M O T O R O L A SC i D I O D E S / O P T O l 6 3 6 7 2 5 5 MOTOROLA SC ÖF^LBb7aSS DI ODES/ OPTO 34C DDBöaS? t 38257 D SOT23 (continued) DEVICE NO. BCW67A,B,C, BCW68F,G,H SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C I I • Designed for low-frequency driver stage as well as switching

egs SOT23

Abstract: BC817K-40 thermal resistance
Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration

Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTH10 PIN CONFIGURATION NPN 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Marking Code = 3E

marking 415 sot23

Abstract: marking AM sot-23
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC3930 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Symbol : V

smd diode marking 77

Abstract: CSA1532 CSC3930 transistor smd marking 107
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC3930 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Symbol : V Complementary CSA1532