SOT223 WEIGHT Search Results

design ideas

Abstract: TS16949 ZXTN5551G ZXTP5401G
Contextual Info: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package

Contextual Info: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package

Contextual Info: A Product Line of Diodes Incorporated Green FZT605 120V NPN DARLINGTON TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 120V  Case: SOT223  BVCBO > 140V  Case material: molded plastic. “Green” molding compound.  IC = 1.5A High Continuous current

Contextual Info: A Product Line of Diodes Incorporated Green FZT692B 70V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 70V   BVCBO > 70V   IC = 2.0A High Continuous current Case: SOT223 Case material: molded plastic. “Green” molding compound.

Contextual Info: A Product Line of Diodes Incorporated Green FZT957 300V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > -300V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Pulse Current Case: SOT223 Case material: molded plastic. “Green” molding compound.

Contextual Info: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •

Contextual Info: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 

Contextual Info: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 

Contextual Info: A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. •

Contextual Info: A Product Line of Diodes Incorporated Green FZT751Q 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features

FZT857QTA

Abstract: Y1 marking MARKING fzt
Contextual Info: A Product Line of Diodes Incorporated Green FZT857 300V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 300V   IC = 3.5A High Continuous Collector Current  Case Material: Molded Plastic. “Green” Molding Compound.

BSP75N

Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

FZT751

Abstract: FZT751TA FZT651 FZT marking code MARKING fzt751 MARKING fzt 751 MARKING fzt
Contextual Info: A Product Line of Diodes Incorporated FZT751 SOT223 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR Features • • • • Mechanical Data • • • • • VCEO = 60V Continuous current IC cont = 3A Low Saturation Voltage Complementary Type – FZT651

Contextual Info: DZTA42 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 300V • • IC = 500mA high Collector Current • • • 2W Power Dissipation Low Saturation Voltage VCE sat < 500mV @ 20mA • • Complementary PNP Type: DZTA92 •

FZT851

Abstract: FZT851TA
Contextual Info: A Product Line of Diodes Incorporated Green FZT851 60V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 60V • • IC = 6A High Continuous Collector Current • Case Material: Molded Plastic. “Green” Molding Compound. •

522BS

Abstract: BSP75GTA
Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

FZT855Ta

Abstract: fzt855
Contextual Info: A Product Line of Diodes Incorporated Green FZT855 150V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 150V   IC = 5A high Continuous Collector Current  Case Material: Molded Plastic. “Green” Molding Compound. 

FZT853

Contextual Info: A Product Line of Diodes Incorporated Green FZT853 100V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 100V • • IC = 6A high Continuous Collector Current • Case Material: Molded Plastic. “Green” Molding Compound. •

BSP75G

Abstract: BSP75GTA BSP75GTC
Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

Contextual Info: A Product Line of Diodes Incorporated Green FZT851 60V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 60V   IC = 6A High Continuous Collector Current  Case Material: Molded Plastic. “Green” Molding Compound. 

ZNS66

Contextual Info: DSS60601MZ4 60V NPN LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data •     BVCEO > 60V IC = 6A High Continuous Current ICM = 12A Peak Pulse Current Low Saturation Voltage VCE sat < 60mV @ 1A Complementary PNP Type: DSS60600MZ4 