SOT223 WEIGHT Search Results
SOT223 WEIGHT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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design ideas
Abstract: TS16949 ZXTN5551G ZXTP5401G
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ZXTP5401G OT223, -150V -600mA ZXTN5551G OT223 ZXTP5401GTC ZXTP5401GTA D-81541 design ideas TS16949 ZXTN5551G ZXTP5401G | |
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Contextual Info: A Product Line of Diodes Incorporated Green FZT957 300V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > -300V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Pulse Current Case: SOT223 Case material: molded plastic. “Green” molding compound. |
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FZT957 OT223 -300V -240mV FZT857 J-STD-020 MIL-STD-202, DS33191 | |
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Contextual Info: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. • |
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BCP5316Q OT223 -500mV BCP5616Q DS36980 | |
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Contextual Info: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications |
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BCP5316Q OT223 -500mV BCP5616Q DS36980 | |
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Contextual Info: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications |
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BCP5616Q OT223 500mV BCP5316Q DS36981 | |
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Contextual Info: A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • |
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FZT651Q OT223 J-STD-020 300mV MIL-STD-202, DS36917 | |
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Contextual Info: A Product Line of Diodes Incorporated Green FZT751Q 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features |
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FZT751Q OT223 -300mV FZT651Q AEC-Q101 DS36963 | |
522BS
Abstract: BSP75GTA
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BSP75G 550mJ OT223 522-BSP75GTA BSP75GTA 522BS BSP75GTA | |
BSP75G
Abstract: BSP75GTA BSP75GTC
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BSP75G 550mJ OT223 BSP75G BSP75GTA BSP75GTC | |
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Contextual Info: A Product Line of Diodes Incorporated Green FZT851 60V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 60V IC = 6A High Continuous Collector Current Case Material: Molded Plastic. “Green” Molding Compound. |
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FZT851 OT223 J-STD-020 100mV MIL-STD-202, FZT951 DS33174 | |
FZT751
Abstract: FZT751Q FZT751QTA sot223 transistor pinout
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FZT751 OT223 FZT651 AEC-Q101 OT223 J-STD-020 FZT751TA FZT751QTA FZT751TC FZT751 FZT751Q sot223 transistor pinout | |
DS32023
Abstract: DXTN07100BP5 DXTN07100BP5-13 dtn7100b
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DXTN07100BP5 OT223; J-STD-020 MIL-STD-202, DS32023 DXTN07100BP5 DXTN07100BP5-13 dtn7100b | |
DXT5551
Abstract: DXT5551P5-13
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DXT5551P5 OT223; AEC-Q101 J-STD-020 MIL-STD-202, DS32066 DXT5551 DXT5551P5-13 | |
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Contextual Info: A Product Line of Diodes Incorporated Green FZT458 400V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 400V Max Continuous Current IC = 300mA Low Saturation Voltage |
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FZT458 OT223 300mA FZT558 AEC-Q101 OT223 J-STD-020 MIL-STD-202, | |
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FZT651
Abstract: pnp silicon planar high performance transistor
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FZT751 OT223 FZT651 AEC-Q101 OT223 J-STD-020 FZT751TA FZT751TC FZT751 pnp silicon planar high performance transistor | |
X5T953Contextual Info: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -100V IC = -5A Continuous Collector Current Low Saturation Voltage -90mV max @-1A |
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ZX5T953G OT223 -100V -90mV AEC-Q101 OT223 J-STD-020 DS33425 X5T953 | |
SOT223 packageContextual Info: Package information - SOT223 Surface mounted, 4 pin package Package outline Dim. Millimeters Inches Dim. Millimeters Inches Min. Max. Min. Max. Min. Max. Min. Max. A - 1.80 - 0.071 D 6.30 6.70 0.248 0.264 A1 0.02 0.10 0.0008 0.004 e 2.30 BSC 0.0905 BSC A2 |
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OT223 SOT223 package | |
DXT2011
Abstract: DXT2011P5 DXT2011P5-13
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DXT2011P5 OT223; J-STD-020 MIL-STD-202, DS32069 DXT2011 DXT2011P5 DXT2011P5-13 | |
DXT458
Abstract: DXT458P5 DXT458P5-13
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DXT458P5 OT223; 300mA; J-STD-020 MIL-STD-202, DS32067 DXT458 DXT458P5 DXT458P5-13 | |
13003DContextual Info: DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 450V • • • BVCES > 700V BVEBO > 9V • • IC = 1.5A high Continuous Collector Current • • Integrated Collector-Emitter Diode to act as free-wheeling diode |
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DXT13003DG OT223 J-STD-020 MIL-STD-202, DS37262 13003D | |
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Contextual Info: A Product Line of Diodes Incorporated Green ZDT6753 100V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SM-8 Features Mechanical Data • • Case: SM-8 8 LEAD SOT223 • Case Material: Molded Plastic, “Green” Molding Compound. • NPN Transistor • BVCEO > 100 |
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ZDT6753 OT223) 300mV J-STD-020 -100V -300mV MIL-STD-202, DS33209 | |
all diodes ratings
Abstract: ZVN4310
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ZVN4310G OT223 AEC-Q101 OT223 J-STD-020 DS33372 all diodes ratings ZVN4310 | |
DXT2014P5-13
Abstract: DXT2014 DXT2014P5
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DXT2014P5 OT223; -140V J-STD-020 MIL-STD-202, DS32009 DXT2014P5-13 DXT2014 DXT2014P5 | |
DXT2013
Abstract: DXT2013P5 DXT2013P5-13
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DXT2013P5 OT223; -100V J-STD-020 MIL-STD-202, DS32010 DXT2013 DXT2013P5 DXT2013P5-13 | |