SOT223 NU Search Results

design ideas

Abstract: TS16949 ZXTN5551G ZXTP5401G
Contextual Info: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package

ZXTP19100CG

Abstract: ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver
Contextual Info: ZXTP19100CG 100V PNP medium transistor in SOT223 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 3.0W Complementary part number ZXTN19100CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor

ZXTP25 20V 6A

Abstract: ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA
Contextual Info: ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor

ZXTP19060CG

Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA
Contextual Info: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor

marking 8A sot223

Abstract: TS16949 ZXTN19020DG ZXTP19020DG ZXTP19020DGTA
Contextual Info: ZXTP19020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 8A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 3.0W Complementary part number ZXTN19020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor

ZXTN25020DG

Abstract: TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25
Contextual Info: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor

ZXTN19020DG

Abstract: TS16949 ZXTN19020DGTA ZXTP19020DG
Contextual Info: ZXTN19020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 9A VCE(sat) < 35mV @ 1A RCE(sat) = 20mΩ PD = 3.0W Complementary part number ZXTP19020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor

ZXTN25100DG

Abstract: ZXTN25 TS16949 ZXTN25100DGTA ZXTP19100CG
Contextual Info: ZXTN25100DG 100V NPN high gain transistor in SOT223 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 3A VCE(sat) < 100mV @ 1A RCE(sat) = 85m⍀ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor

TS16949

Abstract: ZXTN19060CG ZXTN19060CGTA ZXTP19060CG
Contextual Info: ZXTN19060CG 60V NPN low sat medium power transistor in SOT223 Summary BVCEO > 60V BVCEX > 160V BVECO > 6V IC cont = 7A VCE(sat) < 50mV @ 1A RCE(sat) = 30mΩ PD = 3.0W Complementary part number ZXTP19060CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor

100C

Abstract: TS16949 ZXTN19100CG ZXTN19100CGTA ZXTP19100CG
Contextual Info: ZXTN19100CG 100V NPN low sat medium power transistor in SOT223 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.5A VCE(sat) < 65mV @ 1A RCE(sat) = 43mΩ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor

Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state

SFH6943

Abstract: SFH6943-2 SFH6943-3 SFH6943-4 smd transistor code A4
Contextual Info: SFH6943 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, SOT223/10, Quad Channel Features • • • • • • • • • Transistor Optocoupler in SOT223/10 Package End Stackable, 1.27 mm Spacing Low Current Input Very High CTR, 150 % Typical at IF = 1 mA,

a 701 smd

Contextual Info: SFH6943 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, SOT223/10, Quad Channel Features • • • • • • • • • Transistor Optocoupler in SOT223/10 Package End Stackable, 1.27 mm Spacing Low Current Input Very High CTR, 150 % Typical at IF = 1 mA,

TS16949

Abstract: ZXTP03200BG ZXTP03200BGTA marking sot223 GY
Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state

ZXTN

Abstract: TS16949 ZXTN5551G ZXTP5401G 5551 transistor
Contextual Info: ZXTN5551G 160V, SOT223, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 2W Complementary part number ZXTP5401G Description C A high voltage NPN transistor in a high power dissipation surface mount package B Features • 160V rating

Contextual Info: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

07256

Contextual Info: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.

Contextual Info: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.

BS-P0303

Abstract: Royal Electronics DATASHEET BSP030 BSP030 HZG336 SC-73 03ac29
Contextual Info: BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP030 in SOT223.

PHT4NQ10T

Abstract: SC-73 09581
Contextual Info: PHT4NQ10T TrenchMOS standard level FET M3D087 Rev. 02 — 2 May 2002 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT4NQ10T in SOT223. 2. Features

Contextual Info: BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP030 in SOT223.

Contextual Info: bbS3T31 0Q322Dfl 757 Philips Semiconductors APY Product specification NPN 8 GHz wideband transistor crystal X3A-BFQ195 AUER PHILIPS/DISCRETE b'JE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied

PHT2NQ10T

Abstract: SC-73
Contextual Info: PHT2NQ10T N-channel TrenchMOS transistor M3D087 Rev. 01 — 16 October 2001 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHT2NQ10T in SOT223 2. Features

Contextual Info: SO T2 23 BT148W-600R SCR 26 September 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 SC-73 surface mountable plastic package. These devices are intended to be interfaced directly to microcontrollers,