56359B
Contextual Info: MOUNTING INSTRUCTIONS Page SOT223 1140 SOT186; SOT263; T0220AB 1152 Philips Semiconductors Mounting instructions SOT223 TAPE and REEL PACKING SOT223 Tape and reel packing meets the feed requirements of automatic pick and place equipment (packing conforms
|
OCR Scan
|
ot223ot186ot263t0220ab+156359b
|
PDF
|
zxtP
Abstract: Bv 42 transistor ZXTP2008GTA
Contextual Info: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
zxtp2008got223zxtp2008gtazxtp2008gtc+3522-zxtp2008gtazxtpbv 42 transistor
|
PDF
|
sot223 device Marking
Abstract: transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC
Contextual Info: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 27m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
|
Original
|
zx5t869got223sot223 device markingtransistor 355+2zx5t869gtazx5t869gtc
|
PDF
|
X5T949
Abstract: sot223 transistor pinout ZX5T949G
Contextual Info: ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in
|
Original
|
zx5t949got223zx5t949gtax5t949+1sot223 transistor pinout
|
PDF
|
ZXTN2005G
Abstract: ZXTN2005GTA ZXTN2005GTC
Contextual Info: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
zxtn2005got223zxtn2005gtazxtn2005gtc |
PDF
|
sot223 transistor pinout
Abstract: sot223 device Marking ZXTP2008G ZXTP2008GTA ZXTP2008GTC zxtP
Contextual Info: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
zxtp2008got223zxtp2008gtazxtp2008gtc+3sot223 transistor pinoutsot223 device markingzxtp
|
PDF
|
zxtn
Abstract: sot223 device Marking ZXTN2005GTC ZXTN2005G ZXTN2005GTA
Contextual Info: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
zxtn2005got223r26100zxtn+3sot223 device markingzxtn2005gtczxtn2005gta
|
PDF
|
X5T955
Abstract: "PNP Transistor" ZX5T955G ZX5T955GTA ZX5T955GTC
Contextual Info: ZX5T955G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in
|
Original
|
zx5t955got223-140vzx5t955gta+3zx5t955gtcx5t955pnp transistor
|
PDF
|
zxtP
Abstract: ZXTP2014G ZXTP2014GTA ZXTP2014GTC
Contextual Info: ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
zxtp2014got223-140vzxtp2014gta+2zxtp2014gtczxtp
|
PDF
|
X5T849
Abstract: ZX5T849G ZX5T849GTA ZX5T849GTC
Contextual Info: ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in
|
Original
|
zx5t849got223x5t849zx5t849gta+1zx5t849gtc
|
PDF
|
|
Contextual Info: Philip» Semiconductors Mounting instructions SOT223 TAPE and REEL PACKING SOT223 Tape and reel packing meets the feed requirements of automatic pick and place equipment (packing conforms to IEC publication 286). The tape is an ideal shipping container, making handling easy and providing secure
|
OCR Scan
|
ot2237777kot186ot263+1t0220ab
|
PDF
|
X5T851
Abstract: bv 42 TRANSISTOR equivalent
Contextual Info: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in
|
Original
|
zx5t851got223522-zx5t851gtazx5t851gta+2x5t851bv 42 transistor equivalent
|
PDF
|
sot223 device Marking
Abstract: npn 20A ZX5T869G ZX5T869GTA ZX5T869GTC
Contextual Info: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
|
Original
|
zx5t869got223q26100sot223 device marking+3npn 20azx5t869gtazx5t869gtc
|
PDF
|
|
Contextual Info: A Product Line of Diodes Incorporated Green FZT605 120V NPN DARLINGTON TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 120V Case: SOT223 BVCBO > 140V Case material: molded plastic. “Green” molding compound. IC = 1.5A High Continuous current
|
Original
|
fzt605ot223j-std-020aec-q101+2mil-std-202ds33147
|
PDF
|
|
|
ZXTN2010GTA
Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
Contextual Info: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
zxtn2010got223zxtn2010gtazxtn2010gtc+1bv 42 transistor
|
PDF
|
ZXTP2012GTA
Abstract: sot223 device Marking ZXTP2012G ZXTP2012GTC Bv 42 transistor zxtP
Contextual Info: ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
zxtp2012got223zxtp2012gtazxt26100+4sot223 device markingzxtp2012gtcbv 42 transistorzxtp
|
PDF
|
Bv 42 transistor
Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC
Contextual Info: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
zxtp2013got223-100vzxtp2013gta+5zxtp2013gtcdev26100bv 42 transistorzxtpsot223 device marking
|
PDF
|
|
Contextual Info: A Product Line of Diodes Incorporated Green FZT692B 70V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 70V BVCBO > 70V IC = 2.0A High Continuous current Case: SOT223 Case material: molded plastic. “Green” molding compound.
|
Original
|
fzt692bot223aec-q101j-std-020+2mil-std-202cknowledgeds33157
|
PDF
|
|
Contextual Info: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
zxtn2010got223 |
PDF
|
ZXTN
Abstract: ZXTN2010GTA ZXTN2010G ZXTN2010GTC
Contextual Info: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
zxtn2010got223informat26100zxtn+2zxtn2010gtazxtn2010gtc
|
PDF
|
ZX5T851G
Abstract: ZX5T851GTA ZX5T851GTC Bv 42 transistor
Contextual Info: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in
|
Original
|
zx5t851got223zx5t851gtazx5t851gtc+1bv 42 transistor
|
PDF
|
|
Contextual Info: A Product Line of Diodes Incorporated Green FZT957 300V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > -300V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Pulse Current Case: SOT223 Case material: molded plastic. “Green” molding compound.
|
Original
|
fzt957ot223-300v-240mv+4fzt857j-std-020mil-std-202ds33191
|
PDF
|
ZXTN2011G
Abstract: ZXTN2011GTA ZXTN2011GTC
Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
zxtn2011got223zxtn2011gtazxtn2011gtc |
PDF
|
|
Contextual Info: OBSOLETE ALTERNATIVE IS ZXTN2005G ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
|
Original
|
zxtn2005gzx5t869got223zx5t869gta |
PDF
|