SOT186 PACKAGE Search Results

T0-220AB

Abstract: SOT-263
Contextual Info: PACKAGE OUTLINES Page SOT186 1126 SOT186A 1127 SOT223 1128 SOT263 1129 SOT263-01 1130 SOT404 1131 SOT426 1132 T0220AB 1133

18af

Abstract: BUT10AF but18a BUT18AF BUT18
Contextual Info: Product specification Philips Semiconductors Silicon diffused power transistors BUT18F; BUT18AF PINNING DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. PIN APPLICATIONS

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUX84F; BUX85F PINNING DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. PIN APPLICATIONS

bux85f

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUX84F; BUX85F PINNING High-voitage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. PIN base 2 collector

gk67

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF DESCRIPTION High-voltage, high-speed switching NPN power transistor in a SOT186 package. The BU506DF has an integrated efficiency diode. APPLICATIONS • Horizontal deflection circuits of

BUT18AF

Abstract: but18a MBB077 BUT13 BUT18
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUT18F; BUT18AF PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. PIN base 2 collector

transistor but12af

Abstract: but 12af BUT12F BUT12 BUT12AF
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUT12F; BUT12AF PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. PIN base 2 collector 3 emitter mb APPLICATIONS

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION PINNING-SOT186 PIN SYMBOL 0 O > N-channel enhancement mode logic level fieid-effect power

BUT11APX equivalent

Abstract: BUT11A1 equivalent BU2725DX BU2527 BU506D, BU1506DX, BU2506DF BUT11APX BU4522AX BU2506DF equivalent bu2520dx BU2527DX
Contextual Info: DISCRETE SEMICONDUCTORS Selection guide Power Bipolar Transistors 1998 Dec 16 SOT82 SOT78 TO220AB SOT186 BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF SOT186A (isolated TO220AB) SOT199 SOT399 (TOP3D) SOT429 (TO247) SOT430 (TOP3L) TYPICAL APPLICATIONS

56359B

Contextual Info: MOUNTING INSTRUCTIONS Page SOT223 1140 SOT186; SOT263; T0220AB 1152 Philips Semiconductors Mounting instructions SOT223 TAPE and REEL PACKING SOT223 Tape and reel packing meets the feed requirements of automatic pick and place equipment (packing conforms

philips axial 033

Abstract: power diode package SSOP20 MS-013AC SO20 SOD115
Contextual Info: PACKAGE OUTLINES SOD57 SOD59 SOD61A SOD61H2 SOD61AB to AK SOD61AB2 SOD61AC2 SOD61AD2 SOD64 SOD81 SOD83A SOD87 SOD88A SOD88B SOD100 SOD106 SOD106A SOD107A SOD107B SOD113 SOD115 SOD117 SOD118A SOD118B SOD119AB SOD120 SOT78 SOT163-1 SO20 SOT186 SOT186A SOT223

IGBTs Transistors

Contextual Info: PACKAGE OUTLINES Page SOT186 1126 SOT186A 1127 SOT223 1128 SOT263 1129 SOT263-01 1130 SOT404 1131 SOT426 1132 T0220AB 1133 Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Dimensions in mm _ , Package outlines 9 10.2 max 5.7 max N et Mass: 2 g

UL-94VO

Abstract: IGBTs Transistors UL94
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Package outlines Dimensions in mm Net Mass: 2 g top view SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent

PowerMOS Transistors

Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
Contextual Info: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)

Power Bipolar Transistors

Contextual Info: PACKAGE OUTLINES Page SOT78 T0-220AB SOT82 SOT186(10-220) S O U 86A (Isolated TO-220AB) SOT199 SOT399 (TOP3D) 754 755 756 757 758 759 SOT429 (TO-247) SOT43Q (TOP3L) 760 761 Philips Semiconductors Power Bipolar Transistors Package outlines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-22QAB

TO-220F JEDEC

Abstract: sot186 package TO-220 JEDEC EIAJ TO-220F
Contextual Info: PDF: 1999 Sep 22 Philips Semiconductors Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 'full pack' exposed tabs SOT186 E E1 A P A1 m q D1 D L1 Q b1 L L2 1 2 3 b c w M e e1 5 10 mm scale DIMENSIONS mm are the original dimensions

TO-220F JEDEC

Abstract: sot186 EIAJ SC67
Contextual Info: PDF: 2002 Mar 12 Philips Semiconductors Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 'full pack' exposed tabs SOT186 E E1 A P A1 m q D1 mounting base D L1 Q b1 L L2 1 2 3 b c w M e e1 5 10 mm scale

837 mosfet

Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET

T0-220AB

Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET

buk638-500b

Contextual Info: Pow er Devices Power M O SFET Transistors Logic Level FET's in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) RDs ON max (fl) 100 100 100 100 100 100 100 100 100 100 100 100 100 BUK541-100A BUK552-100B BUK542-100B

BUK446-800B

Abstract: BUK551-100A BUK583 BUK555 600b BUK5
Contextual Info: Pow er Devices Power MOSFET Transistors General Purpose in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) Rd s on max (ft) 500 500 500 600 600 600 600 600 600 BUK438-500B BUK417-500BE BUK417-500AE BUK454-600B

BUK416-100BE

Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
Contextual Info: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93

PBYR1035B

Abstract: PBYR1535CT pbyr1525ct R1635 PBYR1525 BY329X
Contextual Info: Philips Semiconductors Concise Catalogue 1996 Power diodes POWER SEMICONDUCTORS FAST RECTIFIER DIODES DAMPER DIODES type number package ' f (AV) v F ‘rr (V) max. (A) (V) (ns) BY229 BV229F BY229X BY329 BY329X BY359 200, 400, 600, 800 200, 400, 600, 800

BD149

Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25