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    SOT1220 Search Results

    SOT1220 Datasheets (3)

    NXP Semiconductors
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SOT1220
    		NXP Semiconductors Plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals Original PDF 343.96KB 1
    SOT1220_115
    		NXP Semiconductors DFN2020MD-6; reel pack; Standard orientation; 12NC ending 115 Original PDF 213.11KB 4
    SOT1220_125
    		NXP Semiconductors DFN2020MD-6; Tape reel SMD; reversed product orientation 12NC ending 125 Original PDF 203.72KB 4
    SF Impression Pixel

    SOT1220 Price and Stock

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    Toshiba America Electronic Components SSM6K361NU,LF

    MOSFETs SOT1220 100V 3.5A N-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SSM6K361NU,LF Reel 21,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.16
    		Buy Now

    Nexperia BUK6D72-30EX

    MOSFETs BUK6D72-30E/SOT1220/SOT1220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BUK6D72-30EX Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.06
    		Buy Now

    SOT1220 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb15xpdfn2020md-6ot1220 PDF

    Contextual Info: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 2 July 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb40snadfn2020md-6ot1220aec-q101 PDF

    Contextual Info: DF N 20 20 MD -6 PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb85eneadfn2020md-6ot1220aec-q101 PDF

    marking code 1s

    Contextual Info: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb33xpdfn2020md-6ot1220marking code 1s PDF

    Contextual Info: DF N 20 20 MD -6 NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		nx2020p1dfn2020md-6ot1220 PDF

    Contextual Info: 0'  SOT1220 ' 1   DFN2020MD-6; reel pack; standard product orientation; 12NC ending 115 Rev. 2 — 19 February 2013 Packing information 1. Packing method Printed plano box Barcode label Reel Tape QA Seal Preprinted ESD warning PQ-label permanent) Circular sprocket holes opposite the


    Original     		ot1220dfn2020md-6001aak603dfn2020 PDF

    Contextual Info: PMPB13XNE 30 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb13xnedfn2020md-6ot1220 PDF

    Contextual Info: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb40snadfn2020md-6ot1220aec-q101 PDF

    marking code 1f

    Abstract: NXP SMD mosfet MARKING CODE
    Contextual Info: PMPB12UN 20 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb12undfn2020md-6ot1220marking code 1f+1nxp smd mosfet marking code PDF

    TRANSISTOR SMD MARKING CODE 1P

    Abstract: smd transistor marking 1p smd TRANSISTOR code marking 1P
    Contextual Info: PMPB33XN 30 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb33xndfn2020md-6ot1220transistor smd marking code 1p+2smd transistor marking 1psmd transistor code marking 1p PDF

    MOSFET TRANSISTOR SMD MARKING CODE A1

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11
    Contextual Info: PMPB20UN 20 V, single N-channel Trench MOSFET 12 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb20undfn2020md-6ot1220mosfet transistor smd marking code a1+1mosfet transistor smd marking code 11 PDF

    Contextual Info: PMPB48EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb48epdfn2020md-6ot1220 PDF

    Contextual Info: DF N 20 20 MD -6 NX2020N2 30 V, N-channel Trench MOSFET 20 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		nx2020n2dfn2020md-6ot1220 PDF

    Contextual Info: 0'  SOT1220 ' 1   DFN2020MD-6; Tape reel SMD; reversed product orientation 12NC ending 125 Rev. 1 — 4 February 2013 Packing information 1. Packing method Printed plano box Barcode label Reel Tape QA Seal Preprinted ESD warning PQ-label permanent)


    Original     		ot1220dfn2020md-6001aak603dfn20 PDF

    Contextual Info: PMPB47XP 30 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb47xpdfn2020md-6ot1220quic11 PDF

    PMPB15XP,115

    Contextual Info: PMPB15XP 12 V, single P-channel Trench MOSFET 22 November 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb15xpdfn2020md-6ot1220pmpb15xp,115 PDF

    Contextual Info: PMPB29XPE 20 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb29xpedfn2020md-6ot1220 PDF

    Contextual Info: DF N 20 20 MD -6 PMPB215ENEA 80 V, single N-channel Trench MOSFET 18 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb215eneadfn2020md-6ot1220aec-q101 PDF

    Contextual Info: DF N 20 20 MD -6 PMPB11EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb11endfn2020md-6ot1220 PDF

    DFN2020MD-6

    Contextual Info: Reflow soldering footprint Footprint information for reflow soldering of DFN2020MD-6 package 0.33 6x SOT1220 0.76 0.43 (6×) 0.66 0.53 (6×) 0.56 0.25 0.35 0.45 0.775 0.65 2.06 0.285 1.25 1.35 0.35 (6×) 1.05 0.25 (6×) 0.65 0.45 (6×) 0.9 1.1 1.2 0.935


    Original     		dfn2020md-6ot1220sot1220 PDF

    sot1220

    Abstract: LPY1
    Contextual Info: Package outline DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm SOT1220 8x pin 1 index area A B E X D A A1 detail X solderable lead end protrusion max. 0.02 mm (6×) C Lp E2 J1 D2 3 4 2


    Original     		dfn2020md-6ot1220sot12204sot1220+1lpy1 PDF

    PMPB27EP

    Abstract: MARKING CODE 1V TRANSISTOR SMD MARKING CODE 1v max10029
    Contextual Info: PMPB27EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb27epdfn2020md-6ot1220marking code 1v+2transistor smd marking code 1vmax10029 PDF

    marking code 1L

    Abstract: TRANSISTOR SMD MARKING CODE 1l
    Contextual Info: PMPB16XN 30 V, single N-channel Trench MOSFET 20 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		pmpb16xndfn2020md-6ot1220marking code 1l+1transistor smd marking code 1l PDF

    Contextual Info: MD -6 PMPB11EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		pmpb11endfn2020md-6ot1220 PDF