SOT1216 Search Results

Contextual Info: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.

MOSFET TRANSISTOR SMD MARKING CODE 11

Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Contextual Info: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic

Contextual Info: Reflow soldering footprint Footprint information for reflow soldering of DFN1010B-6 package SOT1216 0.9 0.35 0.35 0.15 0.2 6x 0.15 1.3 1.2 0.35 0.25 0.5 0.6 0.35 0.25 1.1 0.3 (6x) 1 1.35 solder land solder land plus solder paste occupied area solder resist

Contextual Info: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: Package outline DFN1010B-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body: 1.1 x 1.0 x 0.37 mm pin 1 index area SOT1216 visible depend upon used manufacturing technology 6x e e b (6x) 1 2 3 L (6x) E1 (2x) E D 6 A1

Contextual Info: DF N1 10B -6 BC857QAS 45 V, 100 mA PNP/PNP general-purpose transistor 25 July 2014 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847QAS.

Contextual Info: DF N1 10B -6 BC847QAPN 45 V, 100 mA NPN/PNP general-purpose transistor 19 July 2013 Product data sheet 1. General description NPN/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits

PQMD12

Contextual Info: DF N1 10B -6 PQMD12 NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ 24 July 2013 Product data sheet 1. General description NPN/PNP double Resistor-Equipped Transistors RET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.

Contextual Info: Information about product quality of device type PMDXB600UNE Quality and reliability data provided by NXP Semiconductors is intended to be a non-binding estimate of product performance only. It does not imply that any performance levels reflected in such data can be met

NX3008NBKMB

Abstract: IP4303CX4 PCMF2DFN1
Contextual Info: Safeguard sensitive ICs - Increase battery life - Save space With NXP key products as recommended in this brochure Interface / Function Description Product type Package NFC antenna protection 18 / 24 V Birectional low capacitance ESD protection diode PESD18VF1BL

PQMD12

Contextual Info: Small & Powerful NXP MOSFETs and bipolar transistors in DFN1010 First 3 A transistors in a 1.1 mm² leadless plastic package This new product series, housed in tiny leadless packages and ideal for use in tightfootprint power management and load switches, includes small yet powerful high-Ptot

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

Contextual Info: Our broad package range provides maximum flexibility Very small 2 Pins Ultra small DSN0603-2 3 Pins SOT883B (SOT883) 4/5 Pins 1.0 x 0.6 x 0.37 (SOT1215) (SOT1194) Medium power SOD323F SOD323 SOD123F SOD123W SOD128 1.7 x 1.25 x 0.7 1.7 x 1.25 x 0.95 2.6 x 1.6 x 1.1

NX3008NBKMB

Abstract: PCMF2DFN1
Contextual Info: 使用本手册推荐的恩智浦主要产品 保护敏感的IC – 延长电池寿命 – 节省空间 接口/功能 说明 产品型号 封装 NFC天线保护 18/24 V双向低电容 ESD保护二极管 PESD18VF1BL PESD24VF1BL PESD18VF1BSF PESD24VF1BSF DFN1006