SOT106 Search Results

Contextual Info: N3 PTVSxU1UPA series HU SO 300 W Transient Voltage Suppressor Rev. 1 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description 300 W unidirectional Transient Voltage Suppressor TVS in a DFN2020-3 (SOT1061) leadless medium power Surface-Mounted Device (SMD) plastic package, designed for

Contextual Info: PBSS4330PA 30 V, 3 A NPN low VCEsat BISS transistor Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

NXP SMD TRANSISTOR MARKING CODE

Abstract: PBSS85 PBSS9410PA
Contextual Info: PBSS9410PA 100 V, 2.7 A PNP low VCEsat BISS transistor Rev. 01 — 11 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

PMEG2020EPA

Contextual Info: PMEG2020EPA 2 A low VF MEGA Schottky barrier rectifier Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT1061 leadless small

transistor smd marking AJ

Abstract: smd code marking ID smd transistor marking AJ TRANSISTOR SMD MARKING CODE AJ
Contextual Info: PBSS5330PA 30 V, 3 A PNP low VCEsat BISS transistor Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

smd code A9 3 pin transistor

Abstract: smd transistor a9 NXP SMD TRANSISTOR MARKING CODE PBSS5612PA
Contextual Info: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: Package outline HUSON3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm SOT1061 X A B v b B D A A A1 E terminal 1 index area detail X C terminal 1 index area y1 C e 1 y 2 L 6x e1 Eh 3 Dh 1 Dimensions

Contextual Info: Package outline VFBGA48: plastic very thin fine-pitch ball grid array package; 48 balls A B D SOT1063-1 ball A1 index area E A A2 A1 detail X e1 1/2 e e ∅v ∅w b H M M C C A B C y y1 C e G F E e2 D 1/2 e C B A ball A1 index area 1 2 3 4 5 6 7 8 X 2.5 5 mm

Contextual Info: PBSS5620PA 20 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: PBSS4620PA 20 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: PBSS4330PA 30 V, 3 A NPN low VCEsat BISS transistor Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: PMEG2020EPA 2 A low VF MEGA Schottky barrier rectifier Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT1061 leadless small

p-channel mosfet with diode sot89

Abstract: PMFPB6532 PMFPB6545 AEC-Q101-qualified PMEG30 MOSFET455 PBSS304PX PMEG3020CPA PMEG4010CPA PMEG2020CPA
Contextual Info: NXP leadless, 2 x 2 mm SOT1061 and SOT1118 packages Fit more functions on a PCB with small, thin medium-power packages These leadless, medium-power SMD packages measure only 2 x 2 x 0.65 mm and provide excellent electrical and thermal performance. They enable high integration for a range of

Contextual Info: Package outline HWSON8: plastic thermal enhanced very very thin small outline package; no leads; 8 terminals; body 2 x 3 x 0.75 mm SOT1069-2 X A B D A E A2 A1 A3 terminal 1 index area detail X e1 terminal 1 index area e 1 4 C C A B C v w b y y1 C L K E2 8

SmD TRANSISTOR a75

Contextual Info: PBSS5580PA 80 V, 4 A PNP low VCEsat BISS transistor Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: PBSS4612PA 12 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

smd transistor marking A6

Abstract: TRANSISTOR SMD MARKING CODE a6 NXP SMD TRANSISTOR MARKING CODE
Contextual Info: PBSS4620PA 20 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

smd transistor marking a7

Abstract: smd TRANSISTOR code marking A7 TRANSISTOR SMD MARKING CODE a7 NXP SOT1061 Transistors TRANSISTOR SMD MARKING CODES a7
Contextual Info: PBSS4630PA 30 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

SOT1061

Abstract: SOD323F footprint
Contextual Info: NXP low VF MEGA Schottky rectifier PMEGxEPA in SOT1061 1 and 2 A Schottky rectifiers in leadless medium-power package These low VF (MEGA) Schottky rectifiers, the first to be housed in the leadless medium-power SOT1061 package, offer high forward current capability with low forward voltage. With integrated

PBSS5620PA

Contextual Info: PBSS5620PA 20 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: PBSS8510PA 100 V, 5.2 A NPN low VCEsat BISS transistor Rev. 1 — 17 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: NXP low VF Schottky rectifier single & dual in DFN2020-3 1 and 2 A Schottky rectifiers in leadless medium-power package These low VF Schottky rectifiers, the first to be housed in the leadless medium-power DFN2020-3 (SOT1061) package, offer high forward current capability with low forward

Contextual Info: PBSS9410PA 100 V, 2.7 A PNP low VCEsat BISS transistor Rev. 01 — 11 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with