SOT-363 MARKING CODE 0A Search Results
SOT-363 MARKING CODE 0A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5446/BEA | Rochester Electronics LLC | 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA | Rochester Electronics LLC | 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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SOT-363 MARKING CODE 0A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SOT 363 marking 67
Abstract: MUN5111DW1T1 MUN5111DW1T1G MUN5112DW1T1 MUN5112DW1T1G MUN5113DW1T1 MUN5113DW1T1G MUN5114DW1T1 MUN5114DW1T1G marking CODE 001
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mun5111dw1t1ot-363mun5111dw1t1/dsot 363 marking 67+8 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These |
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lmun5111dw1t1g | |
SOT 363 marking 67
Abstract: MARKING 67 SOT-363 sot-363 MARKING MUN5136DW1T1
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mun5111dw1t1ot-363sot 363 marking 67marking 67 sot-363+2 | |
MUN5111DW1T1
Abstract: MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5136DW1T1
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mun5111dw1t1ot-363mun5111dw1t1/dmun5112dw1t1+7 | |
SMUN5113DW1T1G
Abstract: SMUN5111DW1T1G SOT 363 marking 67 MUN5114DW1T1G
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mun5111dw1t1gsmun5111dw1t1got-363sc-88+5 | |
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Contextual Info: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a |
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mun5111dw1t1gsmun5111dw1t1got-363mun5111dw1t1/d | |
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Contextual Info: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor |
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mun5111dw1t1gsmun5111dw1t1got-363sc-88+2 | |
SMUN5113DW1T1GContextual Info: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor |
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mun5111dw1t1gsmun5111dw1t1gmun5111dw1t1/dsmun5113dw1t1g | |
MUN5111DW1T1G
Abstract: MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G
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mun5111dw1t1got-363mun5111dw1t1/dmun5112dw1t1g+6 | |
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Contextual Info: MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 Dual PNP Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW http://onsemi.com PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network 3 This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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mun5111dw1nsba114edxv6nsba114edp6dta114ed/d | |
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Contextual Info: MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 Dual PNP Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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mun5111dw1nsba114edxv6nsba114edp6dta114ed/d | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zApplications For switching, for muting. PNP zFeatures 1 A collector current is large. |
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500ma250ma200mal2sa2030m3t5g | |
ahr 49 transistorContextual Info: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB |
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l2sb1197kxlt1gl2sd1781k236abl2sb1197kqlt1g+6 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Pb-Free package is available L2SC4083PWT1G 3 COLLECTOR z 3 1 BASE 1 2 EMITTER 2 SC-70/SOT-323 Absolute maximum ratings Ta=25 oC Symbol VCBO VCEO Parameter Collector-base voltage Collector-emitter voltage |
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l2sc4083pwt1gsc-70/sot-323 | |
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BC237
Abstract: equivalent to BC177 2n6431
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mun5111dw1t1reduc218amsc1621t1msc2404+9 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor *32V, *0.5A L2SA1036K*LT1G L2SA1036KPLT1G FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. L2SA1036KQLT1G L2SA1036KRLT1G The G.Suffix Denotes a Pb-Free Lead Finish |
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l2sa1036kl2sa1036kplt1g500mal2sa1036kqlt1g+2 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3837LT1G z Features 1.High transition frequency. Typ.fT=1.5GHz 2.Small rbb`Cc and high gain.(Typ.6ps) 3 3.Small NF. 4. Pb-Free Package is Available. 1 2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) |
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l2sc3837lt1g | |
TRANSISTOR AH-16
Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
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dl126/dnov-2001r14525dl126+10 | |
LRB520S-40T1
Abstract: LRB520S-40T3G sod523 dimension LESHAN RADIO COMPANY marking code 4 SC-79 SOT-8 marking SC
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lrb520s-40t1sc-79/sod523od523/sc-79lrb520s-40t1g+8 | |
CBF493S
Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
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dl126/dnov-2001r14525cbf493s+9 | |
lm5z5v6Contextual Info: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators 100 mW SOD–523 Surface Mount 1 ORDERING INFORMATION Device LM5Z2V4T1 SERIES Package Shipping LM5ZxxxT1 SOD-523 3000/Tape&Reel LM5ZxxxT3 SOD-523 10000/Tape&Reel This series of Zener diodes is packaged in a SOD–523 surface mount package that |
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od-5233000/tape10000/tapelm5z5v6 | |
marking 513 SOD-323
Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
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dl126/dnov-2001r14525marking 513 sod-323+9 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G zApplications Low current rectification 3 1 2 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. SOT– 23 zConstruction Silicon epitaxial planar z Pb-Free package is available |
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lrb411dlt1got-23 | |
CQ 523
Abstract: MARKING CODE cq sot-89
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l2sc2411kxlt1gl2sa1036k236abl2sc2411kplt1g+7 | |