SOT-363 MARKING 260 Search Results

MBC13720 application notes

Abstract: 4-611 motorola
Contextual Info: Technical Data MBC13720/D Rev. 2, 12/2003 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Package Information Plastic Package Case 419B SOT-363 Ordering Information Device Device Marking Package MBC13720T1 20 SOT-363 The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz

marking 47 gain block sot-363

Abstract: S1239
Contextual Info: Technical Data Sheet MBC13720/D Rev. 1, 01/2002 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Scale 2:1 Package Information Plastic Package Case 419B (SOT-363) Ordering Information Device Device Marking Package MBC13720T1 20 SOT-363 The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz

MBC13720

Abstract: MBC13720T1 low noise amplifier 0947
Contextual Info: Freescale Semiconductor, Inc. Technical Data MBC13720/D Rev. 2, 12/2003 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 419B SOT-363 Ordering Information Device Device Marking

BAS16S

Abstract: VPS05604 4C3 diode
Contextual Info: BAS16S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2

VPS05604

Contextual Info: BAS 16S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2

Contextual Info: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current

BAV70S

Abstract: Q62702-A1097 5a2 DIODE
Contextual Info: BAV 70S Silicon Switching Diode Array • For high speed switching applications • Common cathode • Internal galvanic isolated Diodes Arrays in one package Type Marking Ordering Code Pin Configuration BAV 70S A4s 1/4=A1 Q62702-A1097 2/5=A2 Package 3/6=C1/2 SOT-363

TFK 715

Abstract: BAW56S
Contextual Info: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 Q62702-A1253 Package 2/5 = C2 3/6 = A1/2 SOT-363

BAW56S

Abstract: Q62702-A1253 VPS05604
Contextual Info: BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Common anode 6 • Internal galvanic isolated Diodes in one package 2 1 3 VPS05604 Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 2/5 = C2 3/6 = A1/2 SOT-363

a1277

Abstract: Q62702-A1277 VPS05604 A7s marking diode A7S marking code 855i
Contextual Info: BAV 99S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Connected in series 6 • Internal galvanic isolated Diodes in one package 2 1 3 VPS05604 Type Marking Ordering Code Pin Configuration BAV 99S A7s 1/4 = A1 2/5 = C2 3/6=C1/A2 SOT-363

transistor a1241

Abstract: A1241 transistor a1241 datasheet Q62702-A1241 VPS05604 5-30K
Contextual Info: BAS 16S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Internal galvanic isolated Diodes 6 in one package Tape loading orientation 2 1 Type Marking Ordering Code Pin Configuration BAS 16S A6s 3 VPS05604 Package Q62702-A1241 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363

marking 7A

Abstract: sot-363 MARKING MUN5237DW1T1
Contextual Info: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

MUN5211DW1T1

Abstract: MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5237DW1T1
Contextual Info: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

34 sot-363

Abstract: MUN5136DW1T1
Contextual Info: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

MUN5331DW1T1

Contextual Info: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

MUN5311DW1T1

Abstract: MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1
Contextual Info: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

420 sot-363

Abstract: SOT363 footprint marking code 12 SOT-363 amplifier marking code 04 sot-363 SOT363 MARKING 3B BC857 SOT363 BC557 bc556 information of BC557 3f L series surface mount transistor BC858CDW1T1
Contextual Info: BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices http://onsemi.com Dual General Purpose Transistors 3 PNP Duals (2) (1) Q1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is

BC557 transistor

Abstract: MARKING 3F TRANSISTOR BC858CDW1T1
Contextual Info: BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices Dual General Purpose http://onsemi.com Transistors PNP Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is

BC858CDW1T1

Contextual Info: BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices Dual General Purpose http://onsemi.com Transistors PNP Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is

BC848BDW

Contextual Info: BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 http://onsemi.com Dual General Purpose Transistors 3 NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

bc557

Abstract: BC847 SOT363 marking 12 SOT-363 amplifier
Contextual Info: BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 Dual General Purpose Transistors http://onsemi.com NPN Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.

BC858CDW1T1

Abstract: BC856 BC856BDW1T1 BC857 BC857BDW1T1 BC857CDW1T1 BC858 BC858BDW1T1 operation of BC557 TRANSISTOR
Contextual Info: BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is

3F SOT3

Abstract: bc557 3f series surface mount transistor BC858CDW1T1
Contextual Info: BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices http://onsemi.com Dual General Purpose Transistors 3 PNP Duals (2) (1) Q1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is

bc557

Abstract: dual BC847
Contextual Info: BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 Dual General Purpose Transistors http://onsemi.com NPN Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.