SOT-353 MARKING 60 Search Results

2SC5343

Abstract: SUT480H SOT353 x3 5001-004
Contextual Info: SUT480H Semiconductor Epitaxial planar type NPN Silicon Transistor Description • General purpose transistor Features • Two 2SC5343 chips in SOT-353 package Ordering Information Type NO. Marking SUT480H Package Code X3 SOT-353 Outline Dimensions unit : mm

SOT-353

Abstract: marking 3t RB480K
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Diodes SOT-353 RB480K SCHOTTLKY BARRIER DIODE FEATURES z Low current rectification z High reliability MARKING: 3T Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

2SA1980

Abstract: 2SC5343 SUT497H 2SA19
Contextual Info: SUT497H Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Descriptions • General purpose transistor Features • Both 2SA1980 chip and 2SC5343 chip in SOT-353 package Ordering Information Type NO. Marking SUT497H Package Code X8 SOT-353 Outline Dimensions

Contextual Info: JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UMA3N General purpose transistors dual transistors SOT-353 FEATURES z Two DTA143T chips in a package z Mounting cost and area be cut in half 1 Marking: A3 Equivalent circuit

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UML2N Isolated transistor and diodes SOT-353 Features z The 2SC2412K and a diodes are housed independently In a package 1 MARKING：L2 TR MAXIMUM RATINGS Ta=25℃ unless otherwise noted

marking 3t

Contextual Info: SCS480N VOLTAGE 45 V, 1 A Small Signal Schottky Plastic-Encapsulate Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-353 FEATURES ♦ ♦ A E L Low current rectification High reliability B MARKING

5-pin sot 353 Voltage Regulators

Abstract: "LCK" SOT353-1 thermal resistance
Contextual Info: NCP512 80 mA CMOS Low Iq Voltage Regulator in an SC70−5 The NCP512 series of fixed output linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent. The NCP512 series features

Contextual Info: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with

ON Semiconductor marking

Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
Contextual Info: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does

SMD310

Abstract: SOT353 U1
Contextual Info: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

marking 6c sot23

Abstract: BC817 6A SOT23 sot-23 marking code 352 6B SOT23 6C sot23 SOT-23 6C On semiconductor date Code sot-23 marking code 6c marking 6A SOT 23
Contextual Info: BC817-16LT1, BC817-25LT1, BC817-40LT1 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 V Collector −Base Voltage

SC59-5

Contextual Info: MC74HC1GU04 Single Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. The MC74HC1GU04 output drive current is 1/2 compared to MC74HC series. • • • • • • • High Speed: tPD = 7 ns Typ at VCC = 5 V

IGBT Battery 120 watt Charger circuit diagrams

Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494
Contextual Info: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000  SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .

MC7474

Abstract: marking 558 sot23-5 431 SOT23-5 Marking Code m sc70-5 SC70-5 74 08
Contextual Info: MC74HC1G08 Single 2−Input AND Gate The MC74HC1G08 is a high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.

431 SOT23-5

Abstract: marking code t2 sot23-5 vh marking sc70 2.gND 4.out sot23-5 MC74HC1G14
Contextual Info: MC74HC1G14 Single Inverter with Schmitt−Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt−Trigger input fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.

L74VHC1G32

Abstract: 74VHC1G32 MARKING CODE V4 SC-88A footprint sot23-5 transistor T1 A114 A115 C101 JESD22 L74VHC1G32DFT2
Contextual Info: LESHAN RADIO COMPANY, LTD. 2-Input OR Gate L74VHC1G32 The L74VHC1G32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Shortly TTL while maintaining CMOS low power dissipation.

H2D MARKING CODE

Abstract: H2D Marking h2d diode H2D SOT23
Contextual Info: MC74HC1G08 Single 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.

DIODE MARKING CODE G SOT23

Abstract: Marking Code .25c sot23 SOt23-5 footprint wave soldering 3.GND SOT-23 marking code 10 sot23 A114 A115 JESD22 MC74HC MC74HC1G32
Contextual Info: MC74HC1G32 Single 2−Input OR Gate The MC74HC1G32 is a high speed CMOS 2−input OR gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.

NLV74HC1G08DTT1G

Abstract: marking h2 SOT353 NLV74HC1G08DFT2G SOT23-5 marking H2
Contextual Info: MC74HC1G08 Single 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon PNP Epitaxial Planer Transistor L4401DW1T1G z Pb-Free Package is Available. MAXIMUM RATINGS Symbol Ratings Unit Collector-Emitter Voltage Parameter VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6

Contextual Info: MC74HC1G32 Single 2−Input OR Gate The MC74HC1G32 is a high speed CMOS 2−input OR gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.

VH32

Abstract: MC74VHC1G32DFT4 A114 A115 C101 JESD22 MC74VHC1G32 VHC1G32 74VHC1G32
Contextual Info: 2-Input OR Gate MC74VHC1G32 The MC74VHC1G32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Shortly TTL while maintaining CMOS low power dissipation.

A114

Abstract: A115 C101 JESD22 MC74VHC1G32 VH32 74VHC1G32
Contextual Info: LESHAN RADIO COMPANY, LTD. 2-Input OR Gate MC74VHC1G32 The MC74VHC1G32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Shortly TTL while maintaining CMOS low power dissipation.

Contextual Info: MC74HC1GU04 Single Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. The MC74HC1GU04 output drive current is 1/2 compared to MC74HC series. • • • • • • High Speed: tPD = 7 ns Typ at VCC = 5 V