SOT-353 MARKING 60 Search Results

2SC5343

Abstract: SUT480H SOT353 x3 5001-004
Contextual Info: SUT480H Semiconductor Epitaxial planar type NPN Silicon Transistor Description • General purpose transistor Features • Two 2SC5343 chips in SOT-353 package Ordering Information Type NO. Marking SUT480H Package Code X3 SOT-353 Outline Dimensions unit : mm

SOT-353

Abstract: marking 3t RB480K
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Diodes SOT-353 RB480K SCHOTTLKY BARRIER DIODE FEATURES z Low current rectification z High reliability MARKING: 3T Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

2SA1980

Abstract: 2SC5343 SUT497H 2SA19
Contextual Info: SUT497H Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Descriptions • General purpose transistor Features • Both 2SA1980 chip and 2SC5343 chip in SOT-353 package Ordering Information Type NO. Marking SUT497H Package Code X8 SOT-353 Outline Dimensions

Contextual Info: JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UMA3N General purpose transistors dual transistors SOT-353 FEATURES z Two DTA143T chips in a package z Mounting cost and area be cut in half 1 Marking: A3 Equivalent circuit

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UML2N Isolated transistor and diodes SOT-353 Features z The 2SC2412K and a diodes are housed independently In a package 1 MARKING：L2 TR MAXIMUM RATINGS Ta=25℃ unless otherwise noted

SOT-353 MARKING vn

Abstract: NCP512 NCP512SQ13T1G SC70-5 SC88-A SOT-353 code vn
Contextual Info: NCP512 80 mA CMOS Low Iq Voltage Regulator http://onsemi.com MARKING DIAGRAM 5 1 SC70-5/SC-88A/ SOT-353 SQ SUFFIX CASE 419A M The NCP512 series of fixed output linear regulators are designed for handheld communication equipment and portable battery powered

SOT-353

Abstract: ic 353 datasheet ic 353 SC-88A footprint SC-88A JA NCP512 NCP512SQ13T1G SC70-5 SOT-353 MARKING vn SOT353-1 thermal resistance
Contextual Info: NCP512 80 mA CMOS Low Iq Voltage Regulator http://onsemi.com MARKING DIAGRAM 5 1 SC70-5/SC-88A/ SOT-353 SQ SUFFIX CASE 419A M The NCP512 series of fixed output linear regulators are designed for handheld communication equipment and portable battery powered

marking 3t

Contextual Info: SCS480N VOLTAGE 45 V, 1 A Small Signal Schottky Plastic-Encapsulate Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-353 FEATURES ♦ ♦ A E L Low current rectification High reliability B MARKING

Contextual Info: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with

5-pin sot 353 Voltage Regulators

Abstract: sot-353 marking code SOT-353 MARKING vn SC-88A footprint 88a marking
Contextual Info: NCP512 80 mA CMOS Low Iq Voltage Regulator in an SC70−5 Features • • • • • • Low Quiescent Current of 40 mA Typical Low Dropout Voltage of 250 mV at 80 mA Low Output Voltage Option Output Voltage Accuracy of 2.0% Industrial Temperature Range of −40°C to 85°C

5-pin sot 353 Voltage Regulators

Abstract: NCP512SQ27T1
Contextual Info: NCP512 80 mA CMOS Low Iq Voltage Regulator in an SC70−5 Features • • • • • • Low Quiescent Current of 40 mA Typical Low Dropout Voltage of 180 mV at 80 mA and 3.0 V Vout Low Output Voltage Option Output Voltage Accuracy of 2.0% Industrial Temperature Range of −40°C to 85°C

5-pin sot 353 Voltage Regulators

Abstract: "LCK" SOT353-1 thermal resistance
Contextual Info: NCP512 80 mA CMOS Low Iq Voltage Regulator in an SC70−5 The NCP512 series of fixed output linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent. The NCP512 series features

SC-88A footprint

Abstract: NCP512 NCP512SQ15T1 NCP512SQ15T1G marking code c1* SOT353 SOT-353 MARKING vn SOT-353 code vn
Contextual Info: NCP512 80 mA CMOS Low Iq Voltage Regulator in an SC70−5 Features • • • • • • Low Quiescent Current of 40 mA Typical Low Dropout Voltage of 250 mV at 80 mA Low Output Voltage Option Output Voltage Accuracy of 2.0% Industrial Temperature Range of −40°C to 85°C

Contextual Info: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with

Contextual Info: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with

NSVUMC2NT1G

Abstract: NSVUMC2 UMC3NT1G SC marking code NPN transistor
Contextual Info: UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G http://onsemi.com Dual Common Base-Collector Bias Resistor Transistors SC−88A/SOT−353 CASE 419A STYLE 6 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

SC-88A footprint

Abstract: 5-pin sot 353 Voltage Regulators
Contextual Info: NCP512 80 mA CMOS Low Iq Voltage Regulator in an SC70−5 The NCP512 series of fixed output linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent. The NCP512 series features

Contextual Info: UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G http://onsemi.com Dual Common Base-Collector Bias Resistor Transistors SC−88A/SOT−353 CASE 419A STYLE 6 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

SMD310

Abstract: SOT353 U1
Contextual Info: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

Wafer Fab Plant Codes ST

Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
Contextual Info: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

diode Marking code v3

Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
Contextual Info: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.

wz 74 marking

Abstract: t138a V = Device Code
Contextual Info: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

H2D MARKING CODE

Abstract: marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3
Contextual Info: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

AND8004/D

Abstract: V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 MC74HC1G00
Contextual Info: MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer