SOT-23-6 MARKING 32 Search Results

On semiconductor date Code

Abstract: SOT 363 marking CODE 68 sot 23-5 marking code SOT89 MARKING CODE 43 on semiconductor marking code sot STS 75 SOT23 marking CODE GA sot363 SOT89 marking GA mp sot 23 marking code ga sot 363
Contextual Info: Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW-6, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year / Month Type code Example EH S 46 Siemens 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363

TP0610K-T1-E

Abstract: TP0610K-T1-E3
Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

TP0610K-T1

Abstract: TP0610K-T1-E3 0533 TP0610K TP0610K-T1-GE3
Contextual Info: TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

TP0610K-T1-E3

Abstract: S 1476 TP0610K TP0610K-T1-GE3 S10 SOT23 MARKING
Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

TP0610K-T1-E3

Abstract: TP0610KT1E3
Contextual Info: TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3.0 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

VISHAY SOT LOT CODE

Abstract: marking 6k sot-23 package sot23 footprint TP0610K-T1-E3
Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

TP0610K-T1-E3

Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

ZVN4206E

Abstract: bss123 marking sa B55123 2N7002 BS170F BSS123 BSS138 VN10LF ZVN3306F ZVN3310F
Contextual Info: SELECTION TABLES B V dss Id V mA at Id Max. mA Min. Pd ^D S on V GS(thl / > Part number 1 TABLE 4: SOT-23 MOSFETS 'SOTFETS' S2 Max. Id mA V qs V Package marking w N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 BSS123 100 170 0.68 0.8 2.8 1 6 100 10 360 SA

SMP1300

Abstract: marking AA SOD-323 marking AA DIODE SOD 617 sot marking DB SOD-323 MARKING va SOT-23 Microstrip Line SMP1307-05 Alpha Industries pin diodes sot-23 marking VA
Contextual Info: EHAlpha Plastic Packaged Surface Mount PIN Diodes SMP1300 Series Features • Industry Standard Outlines % ê SOD 323 SOT 23 -ft SOT 143 ■ Designed for High Performance Switches & Attenuators ■ Single and Dual Diode Configurations ■ Low Inductance Designs for Microwave

SMS1046

Abstract: S1526 SMS3994 SMS3988-00 SMS1532-00 SMS1526-10 SMS1043 SMS1046-00 SMS1535-00 SMS1526-50
Contextual Info: .a pfeiiù. - Schottky Mixer and Detector Diodes in E3A lpha Surface Mount Plastic Packages înirnnwiamiiiiiiTTiiïïrrmmmi i nu i h iiii ii'iiiiii'iiiiiiiiiiihi ui^ — ^ SMS Series Features For High Volume Commercial Applications SOD 323 Small Surface Mount Packages

BU 508 transistor

Abstract: transistor bu Bu608A bu508 transistor BU 608 bu 508 sot-23 2603 transistor bc 488 BU608
Contextual Info: TELEFUNKEN ELECTRONIC 1?E D • fl^EOO^b DOQTMbS BU 508 •*BU 508 A ■¡rHUHFMMKIM electronic Cf«aliy«Technologies T -32-/3 Silicon NPN Power Transistors Applications: Horizontal deflection circuits in color TV receive« Features: • In triple diffusiion technique

S3995

Abstract: SMS3992-00 SMS3994 S3996 SMS1528-00 SMS3991-10 Alpha Industries pin diodes SMS3990 SMS3991-50 MARKING S15
Contextual Info: Schottky Mixer and Detector Diodes in EOAlpha Surface Mount Plastic Packages SMS Sériés Features < Æ ° -Æ ^ - For High Volume Commercial Applications Small Surface Mount Packages S0D 323 S O T 23 S 0 T 143 Low Conversion Loss • Tight Parameter Distribution

SMS1526-10

Contextual Info: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity

Contextual Info: BCW32LT1 General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 32 Vdc Collector-Base Voltage VCBO 32 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Value Unit

Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel

Motorola 417

Abstract: BCW65ALT1
Contextual Info: MOTOROLA Order this document by BCW65ALT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon BCW65ALT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 32 Vdc Collector – Base Voltage

BCW65ALT1

Contextual Info: MOTOROLA Order this document by BCW65ALT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon BCW65ALT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 32 Vdc Collector – Base Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBCW65ALT1G 3 COLLECTOR 1 BASE Featrues 3 Pb-Free Package is Available. 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 32 Vdc Collector–Base Voltage

sot363 aaa

Abstract: F1 SOT-323
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon BCW65ALT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 32 Vdc Collector – Base Voltage VCBO 60 Vdc Emitter – Base Voltage

BCW65ALT1

Contextual Info: ON Semiconductort BCW65ALT1 General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 32 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 800 mAdc Symbol Max Unit PD 225

SOT-23 MARKING 20A

Abstract: marking code 5A6 sot 26 zener 5A6 ON marking 5A6 SOT-23 5A6 marking 5A6 SOT23 ZENER DIODES SOT-23 182 5a6 sot23 marking 33a zener sot23 marking 33a sot23
Contextual Info: MMBZ5V6ALT1 Series Preferred Device 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors SOT−23 Dual Common Anode Zeners for ESD Protection http://onsemi.com These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They

ic8001

Abstract: BCW65ALT1 BCW65ALT1G BCW65CLT1 BCW65CLT1G
Contextual Info: BCW65ALT1, BCW65CLT1 General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 32 Vdc Collector − Base Voltage VCBO 60 Vdc

Contextual Info: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors MMBZ5V6ALT1 Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They