SOT-23-5 MARKING VF Search Results

L6 marking 5-pin

Abstract: BAR 17
Contextual Info: Silicon PIN Diodes BAR 17 »Current-controlled RF resistor for RF attenuation i Switching applications above 1 MHz Type Marking Ordering code tape and reel Pin configuration Package BAR 17 L6 Q 62702-A 7 8 5 1o- f» -o3 SOT-23 Maximum Ratings Parameter

Contextual Info: Transys Electronics L I M I T E D SILICON PLANAR SWITCHING DIODE BAL99 SOT-23 3 MARKING- TF Pin Configuration 1 = NC 2 = ANODE 3 = CATHODE 1 ABSOLUTE MAXIMUM RATINGS DESCRIPTION 2 SYMBOL VALUE UNIT Continuous Reverse Voltage Peak Forward Current Total Device Dissipation FR-5 Board*

Contextual Info: SIEMENS Silicon Dual Schottky Diode BAT 15-04 Features • DBS mixer applications to 12 GHz • Low noise figure • Low barrier type 5:1 Type Ordering Code ' tape and reel BAT 15-04 Pin Configuration 1 2 Marking Package S8 SOT-23 3 | Q62702-A504 Maximum Ratings

Contextual Info: SMBD 6050 Silicon Switching Diode For high-speed switching applications Type Marking Ordering code for versions in bulk Ordering code for versions on 8-m m tape Package SMBD 6 0 5 0 S5A upon request upon request SOT 23 M axim um ratings Param eter Symbol Reverse voltage

ZENER DIODES SOT-23

Abstract: marking 18j sot23 MARKING 8S SOT-23
Contextual Info: CÎ! |t y p e n o . ZENER DIODES SOT-23 CASE ZZK TEST ZENER CURRENT VOLTAGE IZ=.25mA @10%Mod MAX VR V MARKING VZ +5% Nominal ohms MAX ohms Max MMBZ5221BL 20 2.4 1200 30 100 1.0 18A MMBZ5222BL MMBZ5223BL MMBZ5224BL 20 20 20 20 20 2.5 2.7 30 30 18B 30 29 28

RB425D

Contextual Info: RB425D SOT-23-3L Schottky barrier Diodes + FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 8 0¡ À0 . 05 1 . 6 0¡ À0. 0 5 0. 35 1. 9 0. 95¡ À0. 025 1. 02 + 2. 92¡ À0. 05 RB425D - Marking: D3L

1403

Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
Contextual Info: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.

L43 BAT54

Abstract: SC BAT54C SOT23 397-I L43 SOT-23
Contextual Info: DISCRETE POWER AND SIGNAL TECHNOLOGIES FAIRCHILD BAT54/A/C/S MICDNDUCTQR n CONNECTION PACKAGE | 1 MARKING BAT54 L4P BAT54C L43 BAT54A L42 BAT54S L44 2 NC BAT54C V I B A T 5 4 AN 3 *t i +n ^B A T^ SOT-23 TO-236AB Low DIAGRAMS 1 | 2 | BAT54S 2 1 Schottky Barrier Diode

RB425D

Contextual Info: SOT-23-3L Schottky barrier Diodes + FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 8 0¡ À0 . 05 1 . 6 0¡ À0. 0 5 0. 35 1. 9 0. 95¡ À0. 025 1. 02 + 2. 92¡ À0. 05 RB425D - Marking: D3L Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃

RB495D

Abstract: marking a0 A0025
Contextual Info: RB495D SOT-23-3L Schottky barrier Diodes 2. 8 0¡ À0 . 05 1 . 6 0¡ À0. 0 5 0. 35 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 92¡ À0. 05 RB495D Marking: D3Q Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃

A005

Abstract: RB495D
Contextual Info: SOT-23-3L Schottky barrier Diodes 2. 8 0¡ À0 . 05 1 . 6 0¡ À0. 0 5 0. 35 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 92¡ À0. 05 RB495D Marking: D3Q Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃

Contextual Info: F A IR C H IL D S E M IC O N D U C T O R DISCRETE POWER AND SIGNAL TECHNOLOGIES BAT54/A/C/S tm CONNECTION DIAGRAMS s PACKAGE BAT54 j I B \ T 5 4 A >> r ~ i SOT-23 TO-236AB Low f T 1 MARKING BAT54 L4P BAT54C L43 BAT54A L42 BAT54S L44 2 NC T 1 2 3 3 | | BAT54S

Contextual Info: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS184LT1G Featrues z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 0.9pF (typ.) 1 z Pb-Free Package is Available.

Contextual Info: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS181LT1G z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 2.2pF (typ.) z Pb-Free Package is Available. 1

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)

SOT-23 MARKING 20A

Abstract: marking code 5A6 sot 26 zener 5A6 ON marking 5A6 SOT-23 5A6 marking 5A6 SOT23 ZENER DIODES SOT-23 182 5a6 sot23 marking 33a zener sot23 marking 33a sot23
Contextual Info: MMBZ5V6ALT1 Series Preferred Device 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors SOT−23 Dual Common Anode Zeners for ESD Protection http://onsemi.com These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They

Contextual Info: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS226LT1G Featrues z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 0.9pF (typ.) 1 z Pb-Free Package is Available.

Contextual Info: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors MMBZ5V6ALT1 Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

Contextual Info: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZ5V6ALT1 Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

Contextual Info: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZ6V8ALT1G Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

LRB751G-40T1G

Abstract: LRB751G-40T3G SC-75
Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB751G-40T1G zApplications General rectification LRB751G-40T1G 1 zFeatures 1 Small power mold type. SO D-723) 2) Low VF 3) High reliability 2 SOD-723 4) Pb-Free package is available zConstruction Silicon epitaxial planar

marking code 5A6 sot 26

Abstract: zener 5A6 5A6 marking code marking code AC sot 23-5 zener 5A6 ON 5a6 zener marking 27A sot-23 LMBZ27VALT1G marking 5A6 SOT23 5a6 sot23
Contextual Info: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZ6V8ALT1G Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

Contextual Info: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZXXALT1G Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They