SOT-23-5 MARKING VE Search Results

sot 23 70.2

Abstract: sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W
Contextual Info: 2N7002 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS<ON m ax) ' d(ON) (min) 60V 7 .5 0 0.5A Order Num ber / Package Product marking for SOT-23: SOT-23 702* 2N7002 w here * = 2-w eek alpha date code

TN2106ND

Contextual Info: TN2106 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: b v dss/ ^DS ON V(3S(tfi) BVdgs (max) (max) TO-236AB* TO-92 Die N 1L* 60V 2 .5 0 2.0V TN2106K1 TN2106N3

IC104

Contextual Info: BCP 72 PNP Silicon AF Power Transistor Preliminary data • For AF driver and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package BCP 72 PAs SOT-23-5

1403

Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
Contextual Info: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.

Contextual Info: NCP803 Very Low Supply Current 3-Pin Microprocessor Reset Monitor The NCP803 is a cost–effective system supervisor circuit designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required.

.318 SOT23

Contextual Info: ON Semiconductort MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

Contextual Info: ON Semiconductort Driver Transistor BSS64LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 80 Vdc Collector −Base Voltage VCBO 120 Vdc Emitter −Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit Total Device Dissipation FR− 5 Board 1

Contextual Info: Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts Typ @ I F = 10 mA

TO-236AB

Abstract: SOT23 marking m5g DIODE M5G
Contextual Info: ON Semiconductort MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

AE sot-23

Abstract: SOT-23 6F PO diode marking sot-23 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 M6H MARKING sot23
Contextual Info: MOTOROLA Order this document by MMBD352LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

TO-236AB

Abstract: DIODE M5G Diode SOT-23 marking J marking 08 sot-23 MMBD352 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 to236ab
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

marking R1E SC-70

Abstract: SOT-23-5 R1A marking code r1e sot23 sot-23-5 525 marking marking R1F NCP4671DSN06T1G marking R1E marking C3 sot23-5 say marking code sot 23 SOT 23 r1a
Contextual Info: NCP4671 400 mA, Dual Rail Ultra Low Dropout Linear Regulator The NCP4671 is a CMOS Dual Supply Rail Linear Regulator designed to provide very low output voltages. The Dual Rail architecture which separates the power for the LDO control circuitry provided via the Vbias pin from the main power path (Vin) offers

BCW68GLT1

Contextual Info: BCW68GLT1 General Purpose Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –800 mAdc Symbol Max Unit PD 225 mW 1.8

BSS64LT1

Contextual Info: ON Semiconductort Driver Transistor BSS64LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C

Contextual Info: BCW32LT1 General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 32 Vdc Collector-Base Voltage VCBO 32 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Value Unit

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon PNP Epitaxial Planer Transistor L4401DW1T1G z Pb-Free Package is Available. MAXIMUM RATINGS Symbol Ratings Unit Collector-Emitter Voltage Parameter VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6

bc807

Abstract: BC807-40LT1 BC807-16LT1 BC807-25LT1
Contextual Info: ON Semiconductort BC807-16LT1 BC807-25LT1 BC807-40LT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 V Collector–Base Voltage VCBO –50 V Emitter–Base Voltage VEBO –5.0 V IC –500

MMBTA63

Abstract: MMBTA63LT1 MMBTA64 MMBTA64LT1
Contextual Info: ON Semiconductort Darlington Transistors MMBTA63LT1 MMBTA64LT1 PNP Silicon MMBTA64LT1 is a Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES –30 Vdc Collector–Base Voltage VCBO –30 Vdc Emitter–Base Voltage VEBO

BC817

Abstract: BC817-16LT1 BC817-25LT1 BC817-40LT1
Contextual Info: ON Semiconductort BC817-16LT1 BC817-25LT1 BC817-40LT1 General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 45 V Collector–Base Voltage VCBO 50 V Emitter–Base Voltage VEBO 5.0 V IC 500 mAdc Collector Current — Continuous

BCW65ALT1

Contextual Info: ON Semiconductort BCW65ALT1 General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 32 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 800 mAdc Symbol Max Unit PD 225

BCW68GLT1

Contextual Info: ON Semiconductort BCW68GLT1 General Purpose Transistor PNP Silicon 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –800 mAdc Symbol Max

Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1

Contextual Info: ON Semiconductort Low Noise Transistor MMBT2484LT1 NPN Silicon 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector −Emitter Voltage VCEO 60 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 100 mAdc Collector Current — Continuous

Contextual Info: ON Semiconductort High Voltage Transistor MMBT6517LT1 NPN Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 350 Vdc Collector −Base Voltage VCBO 350 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Base Current IB 250 mAdc