SOT-23-5 MARKING CODE IC Search Results

UTC "MARKING code"

Abstract: oscilloscope 8120 QW-R119-001 81XX marking 8150 UTC voltage UTC8131 marking code cl linear marking code utc 8140
Contextual Info: UTC 81XX LINEAR INTEGRATED CIRCUIT MARKING INFORMATION PACKAGE PIN CODE PIN 1 PIN 2 PIN 3 PIN4 PIN 5 2 VCC VOUT GND - - MARKING 3 SOT-23 DATE CODE VOLTAGE CODE 3 VOUT GND VCC - - 5 GND VOUT VCC - - A NC NC GND VOUT VCC PIN CODE 2 3 SOT-25 1 2 1 DATE

sot 23 70.2

Abstract: sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W
Contextual Info: 2N7002 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS<ON m ax) ' d(ON) (min) 60V 7 .5 0 0.5A Order Num ber / Package Product marking for SOT-23: SOT-23 702* 2N7002 w here * = 2-w eek alpha date code

IC104

Contextual Info: BCP 72 PNP Silicon AF Power Transistor Preliminary data • For AF driver and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package BCP 72 PAs SOT-23-5

Contextual Info: SIEMENS Silicon Dual Schottky Diode BAT 15-04 Features • DBS mixer applications to 12 GHz • Low noise figure • Low barrier type 5:1 Type Ordering Code ' tape and reel BAT 15-04 Pin Configuration 1 2 Marking Package S8 SOT-23 3 | Q62702-A504 Maximum Ratings

Contextual Info: Si2308DS VISHAY Siliconix ▼ N-Channel 60-V D-S Rated MOSFET New Product PRODUCT SUM M ARY v „s (V) RDS(ON) (-3) lD (A) 0.16 @ V GS = 10 V ±2 .0 0.22 @ VGS = 4.5 V ±1 .7 60 TO-236 (SOT-23) *Marking Code A B S O L U T E M A X IM U M R A TIN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )

SI2304DS marking code SOT-23

Abstract: A4* marking code A4 MARKING CODE
Contextual Info: SÌ2304DS VISHAY Siliconix ▼ N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) r DS(ON) (-2) I d (A) 0.117 @ VGS = 10 V 2.5 0.190 @ VGS = 4.5 V 2.0 30 TO-236 (SOT-23) Top View Si2304DS (A4)* *Marking Code A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N L E S S O T H E R W IS E N O T E D )

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

S979T

Abstract: transistor bf 979 pnp rf transistor f8 sot-23 transistor s979 bc 301 transistor bc 303 transistor
Contextual Info: TELEFUNKEN ELECTRONIC TiH U ilpyiM ilX] e le ctro n ic aie D • ÖSSDO^b 0DDSM3S E S 979 T T- 3 /-/? Creative Technologies Silicon PNP RF Transistor Applications: UHF/VHF high current input and mixer stages Features: Low noise High reverse attenuation • High cross modulation performance

transistor BC 575

Abstract: BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90
Contextual Info: T E L E F U N K E N E L E C T R O N IC m D fllC fl'îSO Q 'îb 000533 b 3 BFY 90 Ml e l e c t r o n i c Creative Technologies Silicon NPN Epitaxial Planar R F Transistor Applications: General up to GHz range Features: • Power gain 8 dB 800 MHz • Noise figure < 5 dB

c 2579 power transistor

Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
Contextual Info: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage

921TS

Abstract: transistor BF 235 DIN41869 marking code C4 Sot 23-5 S920T
Contextual Info: TELEFUNKEN ELECTRONIC 17E I • a^SOG^b OOO^blR 5 BIALGG S 920 TS • S 922 TS ÜK1 e le c tro n ic Cre^tfwTechrtoJog*j Silicon NPN Epitaxial Planar RF Transistors ^ ^ Applications: For telephone sets, telecommunication circuits, hybrid circuits, video driver and power

sot-23 3341

Abstract: transistor bu 126
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • a^SQD^b GOD^MMB 5 • ▼ e le c tro n ic CrwttrtTfcchnotogiw' BU 1 26 T - 3 3 - lf Silicon NPN Power Transistor Applications: Voltage regulator, inverter, switching mode power supply Features: • InTripple Diffusion Mesa Technique

transistor BC 236

Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
Contextual Info: *T I 17E » TELEFUNKEN E L E C T R O N IC TTdlUKFCtfllMOSlKfi • IAL66 û'tëOCHb DODTB^l BC 636 • BC 638 • BC 640 electronic Creata« léchnofogtes Silicon PNP Epitaxial Planar Transistors Applications: For complementary AF driver stages .Features:

transistor bf 760

Abstract: transistor bc 241 transistor bf 241 BF241 TRANSISTOR bf241 mosfet bf 66 transistor B 722 transistor bf 237 telefunken ta 400 241 transistor
Contextual Info: TELEFUNKEN ELECTRONIC Ô1C D • öSEGG^b G0DS177 ^ ■ ALGG w * * -—- BF 240 •BF 241 TT id ilFy K lK lK l e le c tro n ic Creative Technologies Silicon NPN Epitaxial Planar Transistors Applications: BF 240: Controlled AM and FM amplifier stages In common emitter configuration

marking 34 sot-363 rf

Abstract: HSMS-286x Series Detector Schottky Diodes at 915MHZ sot-23 MARKING CODE ZZ AVAGO DATE CODE MARKING sot 23 marking code T2 SOT 363 marking CODE T4 T4 marking sot-323 286E HSMS-2865
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-2865 HSMS-2865 High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large

surface mount limiter diodes

Abstract: marking 34 sot-363 rf HSMS-286F HSMS-286K HSMS-286P 286E HSMS-286B date code A DIODE MARKING CODE T4 marking code tc sot 363 MARKING T2 SOT323
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-286P HSMS-286P High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large

ahr 49 transistor

Contextual Info: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB

DIODE MARKING CODE A1

Abstract: RFID 5.8Ghz HSMS286F marking code e1 DIODE 286E HSMS-286F HSMS-286K package marking AVAGO DATE CODE MARKING sc70-3 PCB PAD
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-286F HSMS-286F High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large

V = Device Code

Contextual Info: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

marking CODE W2D

Abstract: marking w2d
Contextual Info: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power

V = Device Code

Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
Contextual Info: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS

diode Marking code v3

Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
Contextual Info: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.

V = Device Code

Abstract: MC74VHC1G00
Contextual Info: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

Wafer Fab Plant Codes ST

Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
Contextual Info: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer