SOT-23 MARKING YR Search Results
SOT-23 MARKING YR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MKZ36V |
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Zener Diode, 36 V, SOT-23 | Datasheet | ||
MUZ6V2 |
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Zener Diode, 6.2 V, SOT-323 | Datasheet | ||
MKZ30V |
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Zener Diode, 30 V, SOT-23 | Datasheet | ||
MSZ36V |
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Zener Diode, 36 V, SOT-346 | Datasheet | ||
MKZ5V6 |
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Zener Diode, 5.6 V, SOT-23 | Datasheet |
SOT-23 MARKING YR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UTC MMBTH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 3 1 MARKING 2 3E SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C |
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MMBTH10 MMBTH10 OT-23 1000pF 8-10pF 100pF 0-18pF | |
Contextual Info: UTC MMBTH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 3 1 MARKING 2 3E SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C |
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MMBTH10 MMBTH10 OT-23 QW-R206-003 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistors Surface Mount Pb-Free Package is available. LMSD601–RLT1G LMSD601–SLT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMSD601-RLT1G YR 3000/Tape&Reel LMSD601-RLT3G YR |
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LMSD601â LMSD601-RLT1G 3000/Tape LMSD601-RLT3G 10000/Tape LMSD601-SLT1G LMSD601-SLT3G | |
BC547 sot package sot-23
Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
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MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package | |
BC337 BC547
Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
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MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM | |
MMBF4856
Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
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226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA | |
BF173
Abstract: BF173 Transistor BF 145 transistor 569-GS transistor bc 7-40
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BF173 569-GS BF173 BF173 Transistor BF 145 transistor transistor bc 7-40 | |
transistor marking 3em
Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
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MMBTH10LT1, MMBTH10-4LT1 r14525 MMBTH10LT1/D transistor marking 3em MMBTH10LT1 mmbth10 MMBTH10-4LT1 | |
mps 1049
Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
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MMBTH10LT1, MMBTH10-4LT1 mps 1049 JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23 | |
transistor marking 3em
Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
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MMBTH10LT1, MMBTH10-4LT1 MMBTH10LT1/D transistor marking 3em MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2 | |
Contextual Info: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P−Channel 3 MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc 1 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB |
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MMBF5460LT1 236AB) | |
CBF493S
Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
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DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ | |
TRANSISTOR AH-16
Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
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DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601 | |
marking 513 SOD-323
Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
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DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256 | |
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MMBF5457LT1Contextual Info: ON Semiconductort JFET - General Purpose Transistor MMBF5457LT1 N–Channel 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc VGS r 25 Vdc IG 10 mAdc Reverse Gate–Source Voltage Gate Current |
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MMBF5457LT1 236AB) r14525 MMBF5457LT1/D MMBF5457LT1 | |
MMBF5457LT1
Abstract: transistor 6D sot23
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MMBF5457LT1/D MMBF5457LT1 236AB) MMBF5457LT1 transistor 6D sot23 | |
MMBF5460LT1Contextual Info: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P–Channel 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit PD 225 mW 1.8 |
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MMBF5460LT1 236AB) r14525 MMBF5460LT1/D MMBF5460LT1 | |
MMBF5457LT1Contextual Info: ON Semiconductort JFET Ċ General Purpose Transistor MMBF5457LT1 N–Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc VGS r 25 Vdc IG 10 mAdc Reverse Gate–Source Voltage Gate Current 3 1 |
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MMBF5457LT1 236AB) r14525 MMBF5457LT1/D MMBF5457LT1 | |
MMBF5460LT1
Abstract: 90nF
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MMBF5460LT1/D MMBF5460LT1 236AB) MMBF5460LT1 90nF | |
JB MARKING SOT-23
Abstract: DELTA fan bfb
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MMBTH10LT1 OT-23 O-236AB) JB MARKING SOT-23 DELTA fan bfb | |
transistor marking 3em
Abstract: MMBTH10LT1
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MMBTH10LT1/D MMBTH10LT1 OT-23 O-236AB) DiodesMMBTH10LT1/D transistor marking 3em MMBTH10LT1 | |
MMBF5460LT1Contextual Info: ON Semiconductort JFET General Purpose Transistor MMBF5460LT1 P–Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc IGF 10 mAdc Forward Gate Current 3 1 THERMAL CHARACTERISTICS Characteristic |
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MMBF5460LT1 236AB) r14525 MMBF5460LT1/D MMBF5460LT1 | |
transistor marking code 3EM SOT-23
Abstract: NSVMMBTH10 MMBTH10LT1G MMBTH10-4LT1G transistor marking 3em transistor 3em Marking code mps
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MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G AEC-Q101 OT-23 O-236) MMBTH10LT1/D transistor marking code 3EM SOT-23 NSVMMBTH10 MMBTH10LT1G transistor marking 3em transistor 3em Marking code mps | |
Contextual Info: ON Semiconductort JFET Transistor MMBF5484LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc IG(f) 10 mAdc 200 2.8 mW mW/°C °C 1 Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current |
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MMBF5484LT1 236AB) |