SOT-23 MARKING CODE SP Search Results

N-Channel Depletion-Mode MOSFET high voltage

Abstract: SOT-23 MARKING mn DW-200 NDE SOT23 MARKING
Contextual Info: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Id s s Order Number / Package Product marking for SOT-23: b v dgx (max) (min) TO-236AB* NDE* 500V 1.0KÌÌ 1.0mA LND250K1 where * = 2-week alpha date code ’ Sam e as SOT-23. All units shipped on 3,000 piece carrier tape reels.

TP0610K-T1-E

Abstract: TP0610K-T1-E3
Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

xds pnp

Abstract: Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs
Contextual Info: SIEMENS BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor Rn = 2.2kii, R2 = 10kii Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23

TRANSISTOR marking 789 code

Abstract: PM744
Contextual Info: SIEMENS BCR 523 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=1kQ,R2=10kQ PM744 Type Marking Ordering Code Pin Configuration BCR 523 XGs C62702-C2487 1=B Package 2=E 3=C SOT-23

TRANSISTOR S2d

Contextual Info: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23

ON Semiconductor marking 821

Contextual Info: SIEMENS BCR 583 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10ki2,R2=10kS2 Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings

BSS284

Abstract: marking BSs sot23 siemens
Contextual Info: SIEMENS BSS 284 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-1.6 V Pin 2 Pin 1 G Type Vbs BSS 284 -50 V Type BSS 284 Ordering Code Q62702-S299 b -0.13 A flbS(on} 100 Pin 3 D S Package Marking SOT-23

MMBD914LT1G

Abstract: SMMBD914LT1G
Contextual Info: MMBD914LT1G, SMMBD914LT1G, MMBD914LT3G, SMMBD914LT3G High-Speed Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  SOT−23 CASE 318 STYLE 8 Site and Control Change Requirements

SBAT54ALT1G

Contextual Info: BAT54ALT1G, BAT54ALT3G, SBAT54ALT1G, SBAT54ALT3G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

L74VHC1GT08

Abstract: 74VHC1GT08 t08 sot-23 MARKING OK t08 SOT L74VHC1GT08DFT1 marking code t08 VHC1GT08 marking code 10 sot23 A114
Contextual Info: LESHAN RADIO COMPANY, LTD. 2-Input AND Gate with LSTTL–Compatible Inputs L74VHC1GT08 The L74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.

MVSF2N02EL

Abstract: MVSF2N02ELT1G
Contextual Info: MGSF2N02EL, MVSF2N02EL Power MOSFET 2.8 Amps, 20 Volts, N−Channel SOT−23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.

zener 5A6 ON

Abstract: SOT-23 MARKING PW sot-23 Marking 27A E MMBZ6V8ALT1G mmbz5v6alt1g SOT-23 marking 21 marking 33a zener sot23 MARKING 6A8 SOT SZMMBZ5 MMBZ18VALT
Contextual Info: MMBZxxxALT1G Series, SZMMBZxxxALT1G Series 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They

MC74VHC1G135

Abstract: A114 A115 C101 JESD22
Contextual Info: MC74VHC1G135 2-Input NAND Schmitt-Trigger with Open Drain Output The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power

Contextual Info: MC74VHC1GT14 Schmitt-Trigger Inverter / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT14 is a single gate CMOS Schmitt–trigger inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while

MGSF2N02EL

Abstract: MGSF2N02ELT1 MGSF2N02ELT3 sot-23 Marking MC
Contextual Info: MGSF2N02EL Power MOSFET 2.8 Amps, 20 Volts N–Channel SOT–23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. http://onsemi.com

SBC846B

Abstract: BC850BLT1G marking 1a bc847blt1g SBC847BLT1 SBC846ALT1G SERIES SBC846ALT1G 1G t 90 SOT-23 SBC847C
Contextual Info: BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • • • ESD Rating − Machine Model: >400 V AEC−Q101 Qualified and PPAP Capable

Contextual Info: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3−state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power

M74VHC1GT125DF1G

Abstract: M74VHC1GT125DF2G M74VHC1GT125DT M74VHC1GT125
Contextual Info: MC74VHC1GT125 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 5 5 1 M The MC74VHC1GT125 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed

Contextual Info: MC74VHC1G125 Noninverting 3-State Buffer Features • • • • • • • High Speed: tPD = 3.5 ns Typ at VCC = 5 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C Power Down Protection Provided on Inputs Balanced Propagation Delays Pin and Function Compatible with Other Standard Logic Families

Contextual Info: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

m6g transistors marking code

Abstract: m6g marking code m6g marking sot23 SMMBF4391LT1G marking 6j M6G sot 23 marking code m6g m6g sot23 marking m6g MMBF4393
Contextual Info: MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors http://onsemi.com N−Channel 3 Features 1 • S Prefix for Automotive and Other Applications Requiring Unique • 2 Site and Control Change Requirements; AEC−Q101 Qualified and

SBCX19LT1G

Abstract: SBCX19
Contextual Info: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique

MC74VHC1G32DFT1G

Abstract: SOt23-5 footprint wave soldering
Contextual Info: MC74VHC1G32 Single 2-Input OR Gate The MC74VHC1G32 is an advanced high speed CMOS 2−input OR gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.

MC74VHC1G08DFT2G

Abstract: V2MG MC74VHC1G08DFT1G MC74VHC1G0 MC74VHC1G08
Contextual Info: MC74VHC1G08 Single 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.